Mitsubishi FG4000CX-90DA High power inverter use press pack type Datasheet

MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000CX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
FG4000CX-90DA
Dimensions in mm
GATE (WHITE)
500 ± 8
26 ± 0.5
● ITQRM Repetitive controllable on-state current ...........4000A
● IT(AV) Average on-state current .....................1200A
● VDRM Repetitive peak off state voltage ...................4500V
● Anode short type
0.4 MIN
0.4 MIN
AUXILIARY CATHODE
CONNECTOR (RED)
φ 85 ± 0.2
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
φ 85 ± 0.2
φ 120 MAX
ANODE
φ 3.5 DEPTH 2.2 ± 0.2
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Symbol
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
Voltage class
90DA
19
19
19
4500
4500
2500
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage+
Non-repetitive peak off-state voltage+
DC off-state voltage+
Unit
V
V
V
V
V
V
+ : VGK = –2V
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
VDM = 3375V, Tj = 125°C, CS = 5.0µF, LS = 0.2µH
f = 60Hz, sine wave θ = 180°, Tf = 78°C
One half cycle at 60Hz
One cycle at 60Hz
VD = 3400V, IGM = 40A, Tj = 125°C
Recommended value 47
Standard value
Ratings
4000
1880
1200
20
1.7 × 106
500
10
19
130
1100
520
33
130
300
–40 ~ +125
–40 ~ +150
38 ~ 54
1600
Unit
A
A
A
kA
A2s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000CX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test conditions
VTM
IRRM
IDRM
IRG
dv/dt
tgt
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Tj = 125°C, ITM = 4000A, Instantaneous measurment
Tj = 125°C, VRRM Applied
Tj = 125°C, VDRM Applied, VGK = –2V
Tj = 125°C, VRG = 19V
Tj = 125°C, VD = 2250V, VGK = –2V
Tj = 125°C, ITM = 4000A, IGM = 40A, VD = 3400V
tgq
Turn-off time
IGQM
VGT
IGT
Rth(j-f)
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
Tj = 125°C, ITM = 4000A, VDM = 3375V, diGQ/dt = –50A/µs
VRG = 17V, CS = 5.0µF, LS = 0.2µH
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
Junction to fin
Min
—
—
—
—
1000
—
Limits
Typ
—
—
—
—
—
—
—
—
—
—
—
—
1000
—
—
—
Max
4.0
100
150
100
—
10
40
—
1.5
4000
0.010
Unit
V
mA
mA
mA
V/µs
µs
µs
A
V
mA
°C/W
MAXIMUM ON-STATE CHARACTERISTIC
104
7 Tj = 125°C
5
3
2
103
7
5
3
2
102
7
5
3
2
101
0
RATED SURGE ON-STATE CURRENT
30
SURGE ON-STATE CURRENT (kA)
ON-STATE CURRENT (A)
PERFORMANCE CURVES
27
24
21
18
15
12
9
6
3
0 0
10
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
ON-STATE VOLTAGE (V)
101
7
5 PFG(AV) = 130W
3
VGT = 1.5V
2
100
7
5
3
2
PFGM = 520W
Tj = 25°C
IGT = 4000mA
IFGM = 130A
10–1
103 2 3 5 7 104 2 3 5 7 105 2 3 5 7 106
GATE CURRENT (mA)
2 3
5 7 102
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
100 2 3 5 7101
0.015
THERMAL IMPEDANCE (°C/W)
GATE VOLTAGE (V)
VFGM = 10V
5 7 101
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
102
7
5
3
2
2 3
0.012
0.009
0.006
0.003
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (S)
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000CX-90DA
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
4800
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
130
180°
4200
θ
120°
3600
90°
360°
RESISTIVE,
3000 INDUCTIVE
LOAD
2400
FIN TEMPERATURE (°C)
ON-STATE POWER DISSIPATION (W)
HIGH POWER INVERTER USE
PRESS PACK TYPE
60°
θ = 30°
1800
1200
600
0
120
θ
110
360°
RESISTIVE,
INDUCTIVE
LOAD
100
90
80
0
300
600
50
1200
900
90° 120°
180°
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
8000
140
7000
130
θ
6000
360°
RESISTIVE,
INDUCTIVE
LOAD
5000
4000
270°
DC
180°
90°
120°
60°
θ = 30°
3000
2000
2000
90
80
8000
VD = 5 ~ 20V
IT = 25 ~ 200A
HALF SINE WAVE
7000
6000
5000
4000
3000
2000
1000
0
–60
–20
20
60
100
JUNCTION TEMPERATURE (°C)
140
120°
θ = 30° 60° 90° 180° 270°
0
500
1000
DC
1500
2000
AVERAGE ON-STATE CURRENT (A)
TURN ON TIME tgt, TURN ON DELAY TIME td (µs)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
360°
RESISTIVE,
INDUCTIVE
LOAD
100
60
1500
1200
900
θ
110
0
1000
600
120
70
500
300
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
1000
0
0
AVERAGE ON-STATE CURRENT (A)
ON TEMPERATURE (W)
ON-STATE POWER DISSIPATION (W)
60°
60
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER CURRENT (mA)
θ = 30°
70
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
10.0
9.0
8.0
7.0
IT = 4000A
VD = 2250V
diT/dt = 500A/µs
diG/dt = 20A/µs
Tj = 125°C
6.0
5.0
tgt
4.0
3.0
td
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100
TURN ON GATE CURRENT (A)
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000CX-90DA
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
30
tgq
25
ts
20
15
VD = 2250V
VDM = 3375V
diGQ/dt = –50A/µs
VRG = 17V
CS = 5.0µF
LS = 0.2µH
Tj = 125°C
10
5
0
1000
2000
3000
4000
5000
TURN OFF CURRENT (A)
TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs)
TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs)
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
40
30
tgq
20 VD = 2250V
0
0 10 20 30 40 50 60 70 80 90 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
1400
1000
800
600
VD = 2250V
VDM = 3375V
diGQ/dt = –50A/µs
VRG = 17V
CS = 5.0µF
LS = 0.2µH
Tj = 125°C
400
0
1000
2000
3000
4000
TURN OFF GATE CURRENT (A)
TURN OFF GATE CURRENT (A)
1200
200
800
VD = 2250V
VDM = 3375V
IT = 4000A
VRG = 17V
CS = 5.0µF
LS = 0.2µH
Tj = 125°C
600
0 10 20 30 40 50 60 70 80 90 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN ON SWITCHING ENERGY
(MAXIMUM)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
16
SWITCHING ENERGY Eoff (J/P)
SWITCHING ENERGY Eon (J/P)
1000
TURN OFF CURRENT (A)
VD = 2250V
7.0 IGM = 40A
diG/dt = 20A/µs
CS = 5.0µF
6.0 RS = 5Ω
Tj = 125°C
5.0
diT/dt = 500A /µs
4.0
300A /µs
3.0
2.0
100A /µs
1.0
0
1200
400
5000
8.0
0
ts
VDM = 3375V
IT = 4000A
10 VRG = 17V
CS = 5.0µF
LS = 0.2µH
Tj = 125°C
1000
2000
3000
4000
TURN ON CURRENT (A)
5000
VD = 2250V
14 VDM = 3375V
diGQ/dt = –50A/µs
VRG = 19V
12 LS = 0.2µH
10
Tj = 125°C
8
CS = 2.0µF
4.0µF
5.0µF
6
4
2
0
0
1000
2000
3000
4000
TURN OFF CURRENT (A)
Aug.1998
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