Fairchild FQAF34N20L 200v logic n-channel mosfet Datasheet

FQAF34N20L
June 2000
QFET
TM
FQAF34N20L
200V LOGIC N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
•
•
•
•
•
•
•
23A, 200V, RDS(on) = 0.075Ω @VGS = 10 V
Low gate charge ( typical 55 nC)
Low Crss ( typical 52 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Low level gate drive requirement allowing direct
opration from logic drivers
D
!
"
! "
"
"
G!
G D S
Absolute Maximum Ratings
Symbol
VDSS
ID
TO-3PF
!
FQAF Series
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQAF34N20L
200
Units
V
23
A
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
14.5
A
92
A
± 20
V
640
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
23
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
9.5
5.5
95
0.76
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
©2000 Fairchild Semiconductor International
Typ
--
Max
1.32
Units
°C/W
--
40
°C/W
Rev. A, June 2000
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
200
--
--
V
--
0.16
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
VDS = 200 V, VGS = 0 V
--
--
1
µA
VDS = 160 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.0
--
2.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 11.5 A
VGS = 5 V, ID = 11.5 A
--
0.057
0.060
0.075
0.080
Ω
gFS
Forward Transconductance
VDS = 30 V, ID = 11.5 A
--
38
--
S
--
3000
3900
pF
--
400
520
pF
--
52
67
pF
ns
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 34 A,
RG = 25 Ω
(Note 4, 5)
VDS = 160 V, ID = 34 A,
VGS = 5 V
(Note 4, 5)
--
45
100
--
520
1050
ns
--
170
350
ns
--
370
750
ns
--
55
72
nC
--
9.9
--
nC
--
27
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
23
A
ISM
--
--
92
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 23 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
205
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 34 A,
dIF / dt = 100 A/µs
--
1.1
--
µC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.8mH, IAS = 23A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 34A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, June 2000
FQAF34N20L
Electrical Characteristics
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
ID , Drain Current [A]
ID, Drain Current [A]
Top :
1
10
1
10
150℃
0
10
25℃
-55℃
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 30V
2. 250μs Pulse Test
-1
0
10
-1
10
0
10
1
10
0
10
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.25
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
0.20
VGS = 5V
0.15
VGS = 10V
0.10
0.05
1
10
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
※ Note : TJ = 25℃
-1
0.00
0
30
60
90
120
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
7000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
6300
10
5600
Ciss
4200
3500
2800
Coss
※ Notes :
2100
1. VGS = 0 V
2. f = 1 MHz
1400
Crss
700
VGS, Gate-Source Voltage [V]
VDS = 40V
4900
Capacitance [pF]
FQAF34N20L
Typical Characteristics
VDS = 100V
8
VDS = 160V
6
4
2
※ Note : ID = 34 A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
0
20
40
60
80
100
120
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, June 2000
(Continued)
2.5
1.2
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
FQAF34N20L
Typical Characteristics
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
1.5
1.0
0.5
※ Notes :
1. VGS = 10 V
2. ID = 17 A
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
25
Operation in This Area
is Limited by R DS(on)
2
20
100 µs
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
1
10
10 ms
DC
0
10
※ Notes :
15
10
5
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
100
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
※ N o te s :
1 . Z θ J C( t) = 1 .3 2 ℃ /W M a x .
2 . D u ty F a c to r , D = t1 /t2
3 . T JM - T C = P D M * Z θ J C( t)
0 .2
0 .1
10
-1
0 .0 5
PDM
0 .0 2
θ JC
( t) , T h e r m a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
t1
Z
0 .0 1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, June 2000
FQAF34N20L
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
5V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
5V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2000 Fairchild Semiconductor International
ID (t)
VDS (t)
VDD
tp
Time
Rev. A, June 2000
FQAF34N20L
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2000 Fairchild Semiconductor International
Rev. A, June 2000
TO-3PF
4.50 ±0.20
5.50 ±0.20
15.50 ±0.20
3.00 ±0.20
ø3.60 ±0.20
°
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
22.00 ±0.20
1.50 ±0.20
16.50 ±0.20
2.50 ±0.20
0.85 ±0.03
23.00 ±0.20
10
10.00 ±0.20
(1.50)
2.00 ±0.20
14.50 ±0.20
16.50 ±0.20
2.00 ±0.20
4.00 ±0.20
3.30 ±0.20
+0.20
0.75 –0.10
2.00 ±0.20
3.30 ±0.20
5.45TYP
[5.45 ±0.30]
©2000 Fairchild Semiconductor International
5.45TYP
[5.45 ±0.30]
+0.20
0.90 –0.10
5.50 ±0.20
26.50 ±0.20
14.80 ±0.20
FQAF34N20L
Package Dimensions
Rev. A, June 2000
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Advance Information
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In Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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Rev. F1
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