JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C (2×2×0.5) unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES z Low Forward Voltage Drop z Fast Switching z Ultra-Small Surface Mount Package APPLICATION For General Purpose Switching Applications, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) BAS70BRW Marking:K75 Maximum Ratings @TA=25 Parameter Symbol Limits Unit VRRM VRWM VR 70 V IF 70 mA Peak forward surge current @<1.0s IFSM 100 mA Power Dissipation Pd 150 mW RθJA 625 ℃/W TJ 125 ℃ TSTG -55 to +125 ℃ Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Thermal Resistance Junction to Ambient Junction temperature Storage temperature range Electrical Ratings @TA=25℃ Parameter Max. Unit VF1 0.41 V IF=1mA VF2 1 V IF=15mA Reverse current IR 100 nA VR=50V Capacitance between terminals CT 2 pF VR=0V,f=1MHz Reverse Recovery Time trr 5 ns Forward voltage Symbol Min. Typ. Conditions IF=IR=10mA Irr=0.1XIR,RL=100Ω Typical Characteristics Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.420 REF. 0.420 REF. 0.650 TYP. 0.400 REF. 0.300 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.017 REF. 0.017 REF. 0.026 TYP. 0.016 REF. 0.012 REF. 0.020 REF. APPLICATION CIRCUITS Bridge rectifiers