TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices Qualified Level JAN JANTX JANTXV 2N2060 2N2060L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol 2N2060 Unit VCEO VCBO VEBO IC 60 100 7.0 500 Vdc Vdc Vdc mAdc One Both Section Sections Total Power Dissipation @ TA = +250C (1) 540 600 PT @ TC = +250C (2) 1.5 2.12 Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg 0 0 0 1) Derate linearly 3.08 mW/ C for TA > 25 C for one section, 3.48 mW/ C for both sections 2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections mW W 0 C TO-78* *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted) Characteristics Symbol Min. Max. Unit V(BR)CER 80 Vdc V(BR)CEO 60 Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) RBE ≤ 10 Ω, IC = 10 mAdc Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc VEB = 5.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 ICBO 10 2.0 µAdc ηAdc IEBO 10 2.0 µAdc ηAdc 120101 Page 1 of 2 2N2060, 2N2060L JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. hFE 25 30 40 50 75 90 120 150 Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 5.0 Vdc IC = 100 µAdc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc IC = 10 mAdc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 50 mAdc, IB = 5.0 mAdc Base-Emitter Saturation Voltage IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) 0.3 Vdc VBE(sat) 0.9 Vdc DYNAMIC CHARACTERISTICS Common Emitter Small-Signal Short-Circuit Forward-Current Transfer ratio IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz Small-Signal Short-Circuit Input Impedance IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Small-Signal Short-Circuit Input Impedance IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Small-Signal Open-Circuit Output Admittance IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Input Capacitance VEB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz (3)Pulse Test: Pulse Width 250 to 350µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 hfe 3 25 hib 20 30 hfe 50 150 hie 1,000 4,000 Ω hoe 0 16 µmhos Cibo 85 pF Cobo 15 pF Ω 120101 Page 2 of 2