IRF IRG4BC30FPBF Insulated gate bipolar transistor Datasheet

PD -95651A
IRG4BC30FPbF
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
• Lead-Free
VCES = 600V
VCE(on) typ. = 1.59V
G
@VGE = 15V, IC = 17A
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
31
17
124
124
± 20
10
100
42
-55 to + 150
V
A
V
mJ
W
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.5
–––
2.0 (0.07)
1.2
–––
80
–––
Units
°C/W
g (oz)
1
01/26/10
IRG4BC30FPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 —
Emitter-to-Collector Breakdown Voltage „ 18
—
Temperature Coeff. of Breakdown Voltage — 0.69
— 1.59
Collector-to-Emitter Saturation Voltage
— 1.99
—
1.7
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-11
Forward Transconductance
6.1
10
—
—
Zero Gate Voltage Collector Current
—
—
—
—
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 1.0mA
VGE = 15V
1.8
IC = 17A
—
IC = 31A
See Fig.2, 5
V
—
IC = 17A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 17A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
t d(on)
tr
td(off)
tf
Eon
Eoff
Ets
t d(on)
tr
t d(off)
tf
E ts
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
51
77
IC = 17A
7.9
12
nC
VCC = 400V
See Fig. 8
19
28
VGE = 15V
21
—
15
—
TJ = 25°C
ns
200 300
IC = 17A, VCC = 480V
180 270
VGE = 15V, RG = 23Ω
0.23 —
Energy losses include "tail"
1.18 —
mJ See Fig. 10, 11, 13, 14
1.41 2.0
20
—
TJ = 150°C,
16
—
IC = 17A, VCC = 480V
ns
290 —
VGE = 15V, RG = 23Ω
350 —
Energy losses include "tail"
2.5
—
mJ See Fig. 13, 14
7.5
—
nH
Measured 5mm from package
1100 —
VGE = 0V
74
—
pF
VCC = 30V
See Fig. 7
14
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC30FPbF
50
For both:
40
Load Current ( A )
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
I
Clamp voltage:
80% of rated
Power Dissipation = 21W
30
Square wave:
60% of rated
voltage
20
I
10
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
IC , Collector-to-Emitter Current (A)
TJ = 25°C
100
TJ = 150°C
10
V GE = 15V
20µs PULSE WIDTH A
1
1
10
IC , Collector-to-Emitter Current (A)
1000
1000
100
TJ = 150°C
TJ = 25°C
10
V CC = 50V
5µs PULSE WIDTH A
1
5
6
7
8
9
10
11
12
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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13
3
IRG4BC30FPbF
2.5
VGE = 15V
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
40
30
20
10
0
25
50
75
100
125
I C = 34A
2.0
I C = 17A
1.5
I C = 8.5A
A
1.0
150
-60
TC , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
VGE = 15V
80µs PULSE WIDTH
-40
-20
0
20
40
60
80
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.01
0.00001
t
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC30FPbF
2000
Cies
1200
800
Coes
400
Cres
A
0
1
VCE = 400V
IC = 17A
SHORTED
Cres = Cce
Coes = Cce + Cgc
1600
C, Capacitance (pF)
20
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
10
16
12
8
4
A
0
100
0
10
VCE, Collector-to-Emitter Voltage (V)
10
= 480V
= 15V
= 25°C
= 17A
1.45
1.40
1.35
A
1.30
0
10
20
30
40
50
R G, Gate Resistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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40
50
60
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC
VGE
TJ
IC
30
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.50
20
60
RG = 23 Ω
VGE = 15V
VCC = 480V
I C = 34A
I C = 17A
1
I C = 8.5A
A
0.1
-60
-40
-20
0
20
40
60
80
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC30FPbF
RG
TJ
VCC
VGE
5.0
1000
= 23 Ω
= 150°C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
6.0
4.0
3.0
2.0
1.0
A
0.0
0
10
20
30
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
40
VGE
= 20V
GE
TJ = 125°C
100
SAFE OPERATING AREA
10
1
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC30FPbF
RL = VCC
ICM
L
D.U.T.
VC *
50V
1000V
0 - VCC
c
480µF
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Pulsed Collector Current
Test Circuit
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Current Test Circuit
Load Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRG4BC30FPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21::
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Note: "P" in assembly line
position indicates "Lead-Free"
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/2010
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