ASI ALR100 Npn silicon rf power transistor Datasheet

ALR100
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2L FLG
L
DESCRIPTION:
N
J
O
A
1
B
The ASI ALR100 is Designed for
1200 – 1400 MHz, L-Band Applications.
D
2
3
M
FEATURES:
F
• Internal Input/Output Matching Network
• PG = 6.0 dB at 100 W/1400 MHz
• Omnigold™ Metalization System
Q
M IN IM U M
D IM
.110 / 2.80
B
.110 / 2.80
.395 / 10.03
.230 / 5.84
G
.003 / 0.08
H
.118 / 3.00
J
.650 / 16.51
.386 / 9.80
L
.900 / 22.86
M
.450 / 11.43
.125 / 3.18
.050 / 1.27
O
TSTG
-65 °C to +200 °C
θJC
0.55 °OC/W
.131 / 3.33
.063 / 1.60
N
.405 / 10.29
P
-65 °C to +250 °C
.006 / 0.15
I
K
270 W @ TC = 25 °C
SYMBOL
.407 / 10.34
.193 / 4.90
F
32 V
CHARACTERISTICS
inches / m m
.140 / 3.56
E
VCC
TJ
M AXIM U M
inches / m m
A
MAXIMUM RATINGS
PDISS
I
R
D
13.5 A
.062 x 45°
Ø.120
P
H
C
IC
K
4
C
G
E
Q
.170 / 4.32
R
.062 / 1.58
1 = COLLECTOR
2&3 = BASE
4 = EMITTER
ORDER CODE: ASI10514
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
65
V
BVCES
IC = 100 mA
65
V
BVEBO
IE = 10 mA
3.5
V
ICES
VCE = 32 V
hFE
VCE = 5.0 V
IC = 5.0 A
PG
ηC
VCC = 28 V
POUT = 100 W
15
f = 1.2 to 1.4 GHz
6.0
50
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
20
mA
---
--dB
%
REV. C
1/1
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