MCH3333A Power MOSFET –30V, 215mΩ, –2.0A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.8V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 215mΩ@ −4V −30V 280mΩ@ −2.5V ELECTRICAL CONNECTION P-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol 3 Value Unit Drain to Source Voltage VDSS −30 Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID −2.0 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −8.0 A Power Dissipation When mounted on ceramic substrate 2 (1000mm × 0.8mm) PD 0.9 W Junction Temperature Tj 150 °C V 1 1 : Gate 2 : Source 3 : Drain 2 Parameter Symbol RθJA © Semiconductor Components Industries, LLC, 2015 Value 138.8 1 Unit MARKING QU LOT No. THERMAL RESISTANCE RATINGS PACKING TYPE : TL LOT No. Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. June 2015 - Rev. 1 −2A 430mΩ@ −1.8V Typical Applications • Load Switch Junction to Ambient When mounted on ceramic substrate 2 (1000mm × 0.8mm) ID Max TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. °C/W Publication Order Number : MCH3333A/D MCH3333A ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=−1mA, VGS=0V VDS=−30V, VGS=0V VGS=±8V, VDS=0V −30 VDS=−10V, ID=−1mA −0.4 typ max Unit V −1 μA ±10 μA −1.3 V VDS=−10V, ID=−1.0A 2.5 RDS(on)1 RDS(on)2 ID=−1.0A, VGS=−4V 165 215 mΩ ID=−0.5A, VGS=−2.5V 200 280 mΩ RDS(on)3 Ciss ID=−0.2A, VGS=−1.8V 270 430 mΩ Output Capacitance Coss VDS=−10V, f=1MHz 39 pF Reverse Transfer Capacitance Crss 31 pF Turn-ON Delay Time td(on) 5.7 ns Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 240 See specified Test Circuit VDS=−15V, VGS=−4V, ID=−2.0A S pF 9.7 ns 27 ns 16 ns 2.8 nC 0.3 nC 0.95 nC VSD Forward Diode Voltage IS=−2.0A, VGS=0V −0.87 −1.5 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD= --15V VIN 0V --4V ID= --1.0A RL=15Ω VIN D VOUT PW=10μs D.C.≤1% G MCH3333A P.G 50Ω S www.onsemi.com 2 MCH3333A www.onsemi.com 3 MCH3333A www.onsemi.com 4 MCH3333A PACKAGE DIMENSIONS unit : mm SC-70FL / MCPH3 CASE 419AQ ISSUE O Recommended Soldering Footprint 0.6 0.4 1 : Gate 2 : Source 2.1 3 : Drain 0.65 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) QU SC-70FL / MCPH3 (Pb-Free / Halogen Free) 3,000 / Tape & Reel MCH3333A-TL-H MCH3333A-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH3333A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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