DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 (see Fig.1) • Small size discrete power amplifier 1 collector • 1.9 GHz operating area 2 base • Gold metallization ensures excellent reliability. 3 emitter 4 emitter handbook, 2 columns 4 1 1 collector • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. 2 emitter 3 base 4 emitter DESCRIPTION 2 Top view BFG10/X (see Fig.1) APPLICATIONS 3 MSB014 Fig.1 SOT143. MARKING NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. TYPE NUMBER CODE BFG10 N70 BFG10/X N71 QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 8 f (GHz) VCE (V) PL (mW) Gp (dB) ηc (%) 1.9 3.6 200 ≥5 ≥50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 250 mA IC(AV) average collector current − 250 mA Ptot total power dissipation − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C up to Ts = 60 °C; see Fig.2; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. 1995 Aug 31 2 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to soldering point Rth j-s VALUE UNIT 290 K/W up to Ts = 60 °C; note 1; Ptot = 400 mW Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 20 MAX. − UNIT V V(BR)CEO collector-emitter breakdown voltage open base; IC = 5 mA 8 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 − V ICES collector leakage current VCE = 5 V; VBE = 0 − 100 µA hFE DC current gain IC = 50 mA; VCE = 5 V 25 − Cc collector capacitance IE = ie = 0; VCB = 3.6 V; f = 1 MHz − 3 pF Cre feedback capacitance IC = 0; VCE = 3.6 V; f = 1 MHz − 2 pF MLC818 500 MLC819 2.0 handbook, halfpage handbook, halfpage P tot (mW) Cc (pF) 400 1.5 300 1.0 200 0.5 100 0 0 0 50 100 150 o 0 200 2 Ts ( C) 4 6 8 10 V CB (V) IC = 0; f = 1 MHz. Fig.3 Fig.2 1995 Aug 31 Power derating curve 3 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X APPLICATION INFORMATION RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION f (GHz) VCE (V) ICQ (mA) PL (mW) Pulsed, class-AB, duty cycle: < 1 : 8 1.9 3.6 1 200 Gp (dB) ηc (%) >5 >50 typ. 7 typ. 60 Ruggedness in class-AB operation The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8. MLC820 10 handbook, halfpage Gp (dB) 8 ηc MLC821 100 ηc 500 handbook, halfpage PL (mW) (%) 80 400 60 300 4 40 200 2 20 100 Gp 6 0 0 100 200 300 0 400 500 P L (mW) 0 0 Pulsed, class-AB operation. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 200 mW. Fig.4 1995 Aug 31 50 100 PD (mW) 150 Pulsed, class-AB operation. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 200 mW. Power gain and efficiency as functions of load power; typical values. Fig.5 4 Load power as a function of drive power; typical values. Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X SPICE parameters for the BFG10 crystal SEQUENCE No. PARAMETER VALUE UNIT 1 IS 2.714 fA 2 BF 102.8 − 3 NF 0.998 − 4 VAF 28.12 V 5 IKF 6.009 A 6 ISE 403.2 pA 7 NE 2.937 − 8 BR 31.01 − 9 NR 0.999 − 10 VAR 2.889 V 11 IKR 0.284 A 12 ISC 1.487 fA 13 NC 1.100 − 14 RB 3.500 Ω 15 IRB 1.000 µA 16 RBM 3.500 Ω 17 RE 0.217 Ω 18 RC 0.196 Ω 19(1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 5.125 pF 23 VJE 0.600 V 24 MJE 0.367 − 25 TF 12.07 ps C cb handbook, halfpage L1 LB B L2 B' C be C' E' C Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc); fc = scaling frequency = 100 MHz. Fig.6 Package equivalent circuit SOT143. List of components (see Fig.6) DESIGNATION VALUE UNIT Cbe 84 fF Ccb 17 fF Cce 191 fF L1 0.12 nH L2 0.21 nH 0.06 nH 26 XTF 99.40 − L3 27 VTF 7.220 V LB 0.95 nH 28 ITF 3.950 A LE 0.40 nH 29 PTF 0.000 deg 30 CJC 2.327 pF 31 VJC 0.668 V 32 MJC 0.398 − 33 XCJC 0.160 − 34(1) TR 0.000 ns 35(1) CJS 0.000 F 36(1) VJS 750.0 mV 37(1) MJS 0.000 − 38 FC 0.652 − Note 1. These parameters have not been extracted, the default values are shown. 1995 Aug 31 5 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X Test circuit information handbook, full pagewidth V bias R2 VS R1 T1 ,, ,, ,, ,, ,, ,,,, C12 ,,, , , ,,,, L10 C14, C15, C16 L9 L7 C11 C10 L8 50 Ω input L2 C1 C13 L6 DUT L1 L4 L3 C2, C3, C4, C5 L5 C6, C7, C8 50 Ω output C9 MLC822 Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz. 1995 Aug 31 6 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X List of components used in test circuit (see Fig.7) COMPONENT DESCRIPTION VALUE C1, C9, C10, C11 multilayer ceramic chip capacitor; note 1 24 pF C2, C3, C4, C5, C6, C7 multilayer ceramic chip capacitor; note 1 0.86 pF DIMENSIONS CATALOGUE No. C8 multilayer ceramic chip capacitor; note 1 1.1 pF C12, C13 electrolytic capacitor 470 µF; 10 V C14, C15, C16 multilayer ceramic chip capacitor; note 1 10 nF L1 stripline; note 2 length 28.5 mm width 0.93 mm L2 stripline; note 2 length 2.3 mm width 0.93 mm L3 stripline; note 2 length 3.1 mm width 0.93 mm L4 stripline; note 2 length 3.3 mm width 0.93 mm L5 stripline; note 2 length 16.3 mm width 0.93 mm L6 stripline; note 2 length 10 mm width 0.93 mm L7 stripline; note 2 length 4.4 mm width 0.4 mm L8 stripline; note 2 length 19.3 mm width 0.93 mm L9 stripline; note 2 length 19.7 mm width 0.4 mm L10 micro choke T1 BD228 R1 metal film resistor 20 Ω; 0.4 W 2322 157 10209 R2 metal film resistor 530 Ω; 0.4 W 2322 157 15301 2222 031 34471 Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. The striplines are on a 1⁄32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6). 1995 Aug 31 7 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X handbook, full pagewidth 60 Collector Base 70 V bias R2 T1 R1 L10 C12 L9 C15 C14 C11 C13 VS C16 L8 L7 C10 C3 C4 C5 L6 C6 C2 C1 L5 L1 Base L2 L3 L4 C7 C8 Collector C9 MLC823 Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7. 1995 Aug 31 8 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X PACKAGE OUTLINE handbook, full pagewidth 0.75 0.60 3.0 2.8 0.150 0.090 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 1.4 1.2 2.5 max o 10 max 1 1.1 max o 30 max 0.88 2 0 0.1 0.48 1.7 TOP VIEW Dimensions in mm. Fig.9 SOT143. 1995 Aug 31 9 0 0.1 0.1 M A B MBC845 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Aug 31 10