IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE(sat) tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ID110 TC = 110°C 30 A ICM TC = 25°C, 1ms 150 A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 A (RBSOA) Clamped inductive load @ VCE ≤ 600V PC TC = 25°C 220 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6mm (0.062 in.) from case for 10s 300 °C TSOLD Plastic body for 10 seconds 260 °C FC Mounting torque (TO-247) 1.13/10 Nm/lb.in Weight TO-268 TO-247 4 6 g g G E C (TAB) TO-247(IXGH) G C E G = Gate E = Emitter ( TAB ) C = Collector TAB = Collector Features z z z z Optimized for low switching losses Square RBSOA Anti-parallel ultra fast diode International standard packages Advantages z z Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 250μA, VGE = 0V = 250μA, VCE = VGE 600 3.5 5.5 75 μA 1 mA TJ = 125°C = 20A, VGE = 15V, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V V 2.6 1.8 ±100 nA 3.0 V V High power density Low gate drive requirement Applications z z z z z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100013A(11/08) IXGH30N60C3D1 IXGT30N60C3D1 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 20A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff 9 Inductive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 300V, RG = 5Ω td(on) tri Eon td(off) tfi Eoff IC = 20A, VGE = 15V RthJC RthCS (TO-247) Inductive load, TJ = 125°C VCE = 300V, RG = 5Ω TO-268 (IXGT) Outline 30 S 915 78 32 pF pF pF 38 8 17 nC nC nC 16 26 0.27 42 47 0.09 ns ns mJ ns ns mJ 75 0.18 17 28 0.44 70 90 0.33 ns ns mJ ns ns mJ 0.21 0.56 °C/W °C/W TO-247 AD Outline Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions VF IF = 30A, VGE = 0V, Note 1 TJ = 150°C 1.6 IRM trr IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C VR = 100V TJ =100°C IF = 1A, -di/dt = 100A/μs, VR = 30V 100 25 2.7 V V 4 A ns ns 0.9 °C/W RthJC Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH30N60C3D1 IXGT30N60C3D1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 180 VGE = 15V 13V 35 140 30 11V 13V 120 25 IC - Amperes IC - Amperes VGE = 15V 160 20 9V 15 10 100 11V 80 60 9V 40 7V 5 20 0 7V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 2 4 6 8 12 14 16 18 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 40 1.1 VGE = 15V 13V 11V 35 VGE = 15V 1.0 VCE(sat) - Normalized 30 IC - Amperes 10 VCE - Volts VCE - Volts 9V 25 20 15 I C = 40A 0.9 0.8 I C = 20A 0.7 10 I 0.6 5 C = 10A 7V 0.5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 25 3.2 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 70 5.5 TJ = 25ºC 60 5.0 50 I 4.0 C IC - Amperes VCE - Volts 4.5 = 40A 20A 10A 3.5 40 TJ = 125ºC 25ºC - 40ºC 30 20 3.0 10 2.5 0 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 5 6 7 8 VGE - Volts 9 10 11 IXGH30N60C3D1 IXGT30N60C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 24 16 TJ = - 40ºC 22 18 125ºC 14 I C = 20A I G = 10 mA 12 25ºC 16 VGE - Volts g f s - Siemens VCE = 300V 14 20 12 10 8 6 10 8 6 4 4 2 2 0 0 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 40 10,000 60 50 Cies 1,000 IC - Amperes Capacitance - PicoFarads f = 1 MHz Coes 100 40 30 20 TJ = 125ºC 10 Cres 0 100 10 0 5 10 15 20 25 30 35 40 RG = 5Ω dV / dt < 10V / ns 200 300 VCE - Volts 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_30N60C3(4D)7-25-08 IXGH30N60C3D1 IXGT30N60C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 0.8 0.6 1.4 Eon - Eoff 0.7 1.2 Eoff --- 0.6 0.3 I C = 20A 0.2 8 10 12 14 16 18 Eoff - MilliJoules Eoff - MilliJoules 0.4 0.8 TJ = 125ºC 0.3 0.6 0.2 0.4 0.1 0.2 0.0 0.4 TJ = 25ºC 15 20 RG - Ohms E 0.8 0.3 0.6 0.2 0.4 0.2 0 45 55 65 tf 160 TJ = 125ºC, VGE = 15V 75 td(off) - - - - 150 110 140 100 130 I 85 95 105 115 80 110 70 I 50 40 4 6 8 10 140 80 60 60 50 40 40 TJ = 25ºC 20 30 0 20 35 40 t f - Nanoseconds t f - Nanoseconds 70 © 2008 IXYS CORPORATION, All rights reserved 18 20 td(off) - - - - 80 RG = 5Ω , VGE = 15V 120 70 100 60 I C = 40A, 20A 80 50 60 40 40 30 20 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 20 125 t d(off) - Nanoseconds 100 IC - Amperes 16 VCE = 300V t d(off) - Nanoseconds 80 TJ = 125ºC 30 14 90 tf 90 25 12 160 100 VCE = 300V 20 60 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature RG = 5Ω , VGE = 15V 15 = 20A 80 110 10 C RG - Ohms td(off) - - - - 120 90 = 40A 90 0.0 125 180 140 C 120 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 120 VCE = 300V TJ - Degrees Centigrade tf 130 100 I C = 20A 35 - MilliJoules 0.4 t f - Nanoseconds 1.0 I C = 40A 25 170 t d(off) - Nanoseconds VCE = 300V 0.1 40 140 1.2 on Eoff - MilliJoules ---- RG = 5Ω , VGE = 15V 0.5 35 180 1.4 0.6 30 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 0.7 Eon 25 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.2 0.0 10 20 - MilliJoules 0.8 - MilliJoules 0.5 0.4 on 1.0 = 40A E C on I E 0.6 6 1.0 VCE = 300V VCE = 300V 4 ---- RG = 5Ω , VGE = 15V 0.5 1.2 TJ = 125ºC , VGE = 15V Eon IXGH30N60C3D1 IXGT30N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tr 80 70 28 60 60 I C 24 = 40A 50 22 40 20 30 I C 20 10 4 6 8 10 12 14 16 18 tr td(on) - - - - 22 RG = 5Ω , VGE = 15V VCE = 300V 50 20 TJ = 125ºC 40 18 TJ = 25ºC 30 16 20 14 16 10 12 14 0 18 = 20A 24 10 10 20 t d(on) - Nanoseconds 26 t d(on) - Nanoseconds VCE = 300V 70 t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V 30 t r - Nanoseconds 90 15 20 25 30 35 40 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 75 21 70 65 20 I C = 40A t r - Nanoseconds 55 tr 50 td(on) - - - - RG = 5Ω , VGE = 15V 45 VCE = 300V 19 18 40 35 I 30 C 17 = 20A 25 t d(on) - Nanoseconds 60 16 20 15 25 35 45 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_30N60C3(4D)7-25-08 IXGH30N60C3D1 IXGT30N60C3D1 60 A 1000 nC 50 IF 30 TVJ= 100°C VR = 300V 25 800 Qr IRM 40 30 TVJ=100°C 15 400 20 10 TVJ=25°C 200 10 0 IF= 60A IF= 30A IF= 15A 20 IF= 60A IF= 30A IF= 15A 600 TVJ=150°C TVJ= 100°C VR = 300V A 0 1 0 100 3 V 2 5 A/μs 1000 -diF/dt VF Fig. 22. Reverse recovery charge Qr versus -diF/dt Fig. 21. Forward current IF versus VF 2.0 90 trr 1.5 Kf 200 400 600 A/μs 800 1000 -diF/dt Fig. 23. Peak reverse current IRM versus -diF/dt 1.00 TVJ= 100°C IF = 30A V V FR 15 IF= 60A IF= 30A IF= 15A 80 0 20 TVJ= 100°C VR = 300V ns 0 μs tfr 0.75 tfr VFR 1.0 10 0.50 5 0.25 IRM 70 Qr 0.5 0.0 0 40 80 120 °C 160 60 0 200 T VJ 400 600 800 A/μs 1000 0 0 200 -diF/dt Fig. 24. Dynamic parameters Qr, IRM versus TVJ Fig. 25. Recovery time trr versus -diF/dt 1 K/W 0.00 600 A/μs 800 1000 diF/dt Fig. 26. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 0.1 Z thJC 1 2 3 0.01 0.001 0.00001 400 DSEP 29-06 0.0001 0.001 0.01 Fig. 27. Transient thermal resistance junction to case © 2008 IXYS CORPORATION, All rights reserved 0.1 t s 1 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162