SemiHow HIH20N60BP 600v pt igbt Datasheet

VCES = 600 V
IC = 20 A
HIH20N60BP
VCE(sat) typ = 2.2 V
600V PT IGBT
TO-3P
FEATURES
‰ Low VCE(sat)
‰ Maximum Junction Temperature 150୅
‰ Short Circuit Withstand Time 5Ꭹ
G
C
E
‰ Designed for Operation Between 1-20KHz
‰ Very tight Parameter Distribution
‰ High Ruggedness, Temperature stable behavior
Absolute Maximum Ratings
Symbol
VCES
IC
Parameter
Collector-Emitter Voltage
Value
Units
600
V
Collector Current
– Continuous (TC = 25୅)
40
A
Collector Current
– Continuous (TC = 100୅)
20
A
Collector Current
– Pulsed
60
A
Diode Forward Current – Continuous (TC = 25୅)
40
A
Diode Forward Current – Continuous (TC = 100୅)
20
A
IFM
Diode Current
60
A
VGES
Gate-Emitter Voltage
ρ20
V
tSC
Short circuit withstand time
(VGE=15V, VCC=400V, TC=150୅)
5
Ꮃ
PD
Power Dissipation (TC = 25୅)
192
W
TJ
Operating Temperature Range
-40 to +150
୅
TSTG
Storage Temperature Range
-55 to +150
୅
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
260
୅
ICM
IF
– Pulsed
(Note 1)
(Note 1)
Notes.
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Typ.
Max.
RșJC(IGBT)
Symbol
Junction-to-Case
Parameter
--
0.65
RșJC(Diode)
Junction-to-Case
--
0.97
RșJA
Junction-to-Ambient
--
40
Units
୅/W
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HIH20N60BP
Dec 2013
Device Marking
Week Marking
Package
Packing
HIH20N60BP
YWWX
TO-3P
Tube
30
Pb Free
HIH20N60BP
YWWXg
TO-3P
Tube
30
Halogen Free
Electrical Characteristics of the IGBT TC=25 qC
Symbol
Parameter
Quantity
RoHS Status
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
4.4
5.7
6.6
V
---
2.2
2.2
2.6
2.7
V
600
--
--
V
On Characteristics
VGE(th)
Gate-Emitter Threshold Voltage
VCE = VGE, IC = 800 Ꮃ
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15 V,
IC = 20 A
TC = 25୅
TC = 125୅
Off Characteristics
BVCES
Collector-Emitter Breakdown
Voltage
VGE = 0 V, IC = 1 mA
ICES
Zero Gate Voltage Collector
Current
VCE = 600 V, VGE = 0 V
--
--
100
Ꮃ
IGES
Gate-Emitter Leakage Current
VGE = ρ20 V, VCE = 0 V
--
--
ρ100
Ꮂ
--
882
--
Ꮔ
--
98
--
Ꮔ
--
55
--
Ꮔ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VCE = 25 V, VGE = 0 V,
f = 1.0 MHz
Switching Characteristics
Turn-On Time
--
48
--
Ꭸ
tr
Turn-On Rise Time
--
67
--
Ꭸ
td(off)
Turn-Off Delay Time
--
74
--
Ꭸ
--
130
--
Ꭸ
--
0.39
--
mJ
td(on)
tf
Turn-Off Fall Time
VCC = 300 V, IC = 20 A,
RG = 20 Ÿ9GE = -10/15V
Inductive load, TC = 25୅
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
--
0.49
--
mJ
Ets
Total Switching Loss
--
0.78
--
mJ
Turn-On Time
--
38
--
Ꭸ
tr
Turn-On Rise Time
--
45
--
Ꭸ
td(off)
Turn-Off Delay Time
--
Ꭸ
td(on)
tf
Turn-Off Fall Time
VCC = 300 V, IC = 20 A,
RG = 20 Ÿ9GE = -10/15V
Inductive load, TC = 125୅
77
--
--
299
--
Ꭸ
--
0.42
--
mJ
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
--
0.91
--
mJ
Ets
Total Switching Loss
--
1.33
--
mJ
Qg
Total Gate Charge
--
70
--
nC
LE
Internal Emitter Inductance
--
13
--
nH
--
120
--
A
IC(SC)
Short Circuit Collector Current
VCC = 480V, IC = 20 A,
VGE = 15 V
VCC = 400 V, tSC ” 5s,
VGE = 15V, TC = 25୅
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HIH20N60BP
Package Marking and Odering Information
VFM
Diode Forward Voltage
IF = 20 A,
VGE = 0 V
TC = 25୅
TC = 125୅
---
2.3
1.9
---
V
trr
Diode Reverse Recovery Time
--
115
--
Ꭸ
Irr
Diode Peak Reverse Recovery
Current
--
10
--
A
Qrr
Diode Reverse Recovery Charge
--
0.94
--
ȝ&
dirr/dt
Diode Peak rate of fall of Reverse
Recovery Current during tb
--
50
--
A/Ꭹ
Erec
Diode Reverse Recovery Energy
--
0.13
--
mJ
trr
Diode Reverse Recovery Time
--
230
--
Ꭸ
Irr
Diode Peak Reverse Recovery
Current
--
20
--
A
Qrr
Diode Reverse Recovery Charge
--
1.86
--
ȝ&
dirr/dt
Diode Peak rate of fall of Reverse
Recovery Current during tb
--
46
--
A/Ꭹ
Erec
Diode Reverse Recovery Energy
--
0.30
--
mJ
IF = 20 A, VR = 300 V
diF/dt = 200 A/ȝV, TC = 25୅
IF = 20 A, VR = 300 V
diF/dt = 200 A/ȝV, TC = 125୅
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HIH20N60BP
Electrical Characteristics of the Diode
HIH20N60BP
Typical Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͤ͑͢͡
HIH20N60BP
Typical Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͤ͑͢͡
HIH20N60BP
Typical Characteristics
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HIH20N60BP
Package Dimension
{vTZwG
15.6±0.20
13.6±0.20
9.6±0.20
4.8±0.20
1.5±0.20
13.9±0.20
14.9±0.20
19.9±0.20
ij
.20
18.7±0.20
±0
5.45typ
3.5±0.20
3±0.20
2±0.20
1±0.20
16.5±0.20
1.4±0.20
0.6±0.20
5.45typ
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