Hitachi HL6325 Low operating current visible laser diode Datasheet

HL6325/26G
Low Operating Current Visible Laser Diode
ADE-208-781A (Z)
2nd Edition
Jul. 1999
Description
The HL6325/26G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure.
They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Application
• Laser leveler
• Laser scanner
• Measurement
Features
•
•
•
•
•
•
Visible light output
Optical output power
Low operating current
Low operating voltage
Operating temperature
TM mode oscillation
: 635 nm Typ (nearly equal to He-Ne gas laser)
: 5 mW CW
: 40 mA Typ
: 2.4 V Max
: +60°C
Package Type
• HL6325/26G: G2
Internal Circuit
• HL6325G
1
Internal Circuit
• HL6326G
1
3
PD
LD
2
3
LD
PD
2
HL6325/26G
Absolute Maximum Ratings (TC = 25°C)
Item
Symbol
Value
Unit
Optical output power
PO
5
mW
LD reverse voltage
VR(LD)
2
V
PD reverse voltage
VR(PD)
30
V
Operating temperature
Topr
–10 to +60
°C
Storage temperature
Tstg
–40 to +85
°C
Optical and Electrical Characteristics (TC = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Optical output power
PO
5
—
—
mW
Kink free
Threshold current
Ith
—
30
50
mA
Operating current
I Op
—
40
60
mA
PO = 5 mW
Operating voltage
VOP
—
2.2
2.4
V
PO = 5 mW
Slope efficiency
ηs
0.3
0.5
0.8
mW/mA
3(mW) / (I(4mW) – I (1mW))
Lasing wavelength
λp
630
635
640
nm
PO = 5 mW
Beam divergence parallel to
the junction
θ//
6
8
11
deg.
PO = 5 mW
Beam divergence
parpendicular to the junction
θ⊥
25
31
37
deg.
PO = 5 mW
Monitor current
IS
0.05
0.1
0.25
mA
PO = 5 mW, VR(PD) = 5V
2
HL6325/26G
Typical Characteristic Curves
Optical Output Power vs.
Forward Current
TC = −10°C
4
25°C
3
50°C
60°C
2
1
0
1.0
10
20 30 40 50 60 70
Forward current, IF (mA)
0.08
0.06
0.04
0.02
0
Slope Efficiency vs.
Case Temperature
0
100
0.6
0.4
0.2
0 10 20 30 40 50
Case temperature, TC (°C)
VR(PD) = 5 V
TC = 25°C
0.10
80
0.8
0
−10
Monitor current, IS (mA)
5
0
Slope efficiency, ηs (mW/mA)
0.12
Threshold current, Ith (mA)
Optical output power, PO (mW)
6
Monitor Current vs.
Optical Output Power
60
1
2
3
4
Optical output power, PO (mW)
5
Threshold Current vs.
Case Temperature
50
20
10
−10
0
10 20 30 40 50
Case temperature, TC (°C)
60
3
HL6325/26G
Monitor Current vs.
Case Temperature
0.20
650
PO = 5 mW
Lasing Wavelength, λp (nm)
Monitor current, IS (mA)
PO = 5 mW
VR = 5 V
0.15
0.10
0.05
0
−10
Lasing Wavelength vs.
Case Temperature
645
640
635
630
−10
0
10 20 30 40
50 60
Case temperature, TC (°C)
500
TC = 25°C
NA = 0.4
TC = 25°C
400
Polarization ratio
PO = 5 mW
Relative intensity
60
Polarization Ratio vs.
Optical Output Power
Lasing Spectrum
PO = 3 mW
0 10 20 30 40 50
Case temperature, TC (°C)
300
200
100
PO = 1 mW
630
4
635
640
645
Wavelength, λp (nm)
650
0
0
3
4
1
2
Optical output power, PO (mW)
5
HL6325/26G
Astigmatism vs.
Optical Output Power
5
TC = 25°C
NA = 0.4
Relative intensity
PO = 5 mW
0.8 TC = 25°C
Perpendicular
0.6
0.4
Parallel
0.2
0
−40 −30 −20 −10 0 10 20
Angle, θ (deg.)
30
Astigmatism, AS (µm)
Far Field Pattern
1.0
4
3
2
1
40
0
0
80
80
Survival rate (%)
Survival rate (%)
100
40
Forward
(C : 100 pF, R : 1.5 kΩ)
N = 10 pcs
judgment : ∆IO ≤ 10%
20
0
0
400
200
Applied voltage (V)
60
40
Reverse
(C : 100 pF, R : 1.5 kΩ)
N = 10 pcs
judgment : ∆IO ≤ 10%
20
600
5
Electrostatic Destruction (Reverse)
Electrostatic Destruction (Forward)
100
60
1
2
3
4
Optical output power, PO (mW)
0
0
0.5
2.5
1
1.5
2
Applied voltage (kV)
3
5
HL6325/26G
Package Dimensions
φ 9.0 +0
–0.025
1.0 ± 0.1
0.4 +0.1
–0
Unit: mm
Glass
φ 7.2 +0.3
–0.2
φ 6.2 ± 0.2
(φ2.0)
3.5 ± 0.2
9±1
2.45
Emitting Point
3 – φ 0.45 ± 0.1
1
2
1.5 ± 0.1
0.3
(90°)
(0.65)
3
3
1
2
φ 2.54 ± 0.35
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
6
LD/G2
—
—
1.1 g
HL6325/26G
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The
laser beam shall be observed or adjusted through infrared camera or equivalent.
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HL6325/26G
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
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: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
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Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
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Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
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Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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