PD -95171 IRG4PC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free VCES = 600V VCE(on) typ. = 1.32V G @VGE = 15V, IC = 31A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 600 60 31 120 120 ± 20 15 160 65 -55 to + 150 V A V mJ W °C 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.24 ––– 6 (0.21) 0.77 ––– 40 ––– Units °C/W g (oz) 1 04/23/04 IRG4PC40SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.75 — 1.32 VCE(ON) Collector-to-Emitter Saturation Voltage — 1.68 — 1.32 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -9.3 gfe Forward Transconductance U 12 21 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA VGE = 15V 1.5 IC = 31A — IC = 60A See Fig.2, 5 V — IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 31A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 100 14 34 22 18 650 380 0.45 6.5 6.95 23 21 1000 940 12 13 2200 140 26 Max. Units Conditions 150 IC = 31A 21 nC VCC = 400V See Fig. 8 51 VGE = 15V — — TJ = 25°C ns 980 IC = 31A, VCC = 480V 570 VGE = 15V, RG = 10Ω — Energy losses include "tail" — mJ See Fig. 10, 11, 13, 14 9.9 — TJ = 150°C, — IC = 31A, VCC = 480V ns — VGE = 15V, RG = 10Ω — Energy losses include "tail" — mJ See Fig. 13, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC40SPbF 80 Fo r bo th: 60 Load C urrent (A ) T rian g ular wa ve : D u ty cy c le : 5 0 % TJ = 1 2 5 °C T s in k = 90 °C G a te d riv e a s s p e c ifie d P ow er D is sip atio n = 35 W C la m p v o lta ge : 8 0% o f rated S q u a re w a v e : 40 60 % of rate d v o ltage 20 Id e al d io d e s A 0 0.1 1 10 100 f, Fre q u e n cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 I C , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 1000 100 TJ = 25°C 10 TJ = 150°C V G E = 15V 20µs PULSE WIDTH 1 0.1 1 VC E , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com A 10 100 T J = 150°C TJ = 25°C 10 V C C = 50V 5µs PULSE WIDTH A 1 5 6 7 8 9 10 VG E , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC40SPbF 2.0 V G E = 15V V C E , C ollec to r-to -E m itte r V oltage (V ) Maximum DC Collector Current (A) 60 50 40 30 20 10 A 0 25 50 75 100 125 VGE = 15V 8 0 µ s P U L S E W ID T H I C = 62A 1.5 I C = 31A I C = 16A A 1.0 -60 150 TC , Case Temperature (°C) -40 -20 0 20 40 60 80 100 120 140 160 T J , Ju n c tio n T e m p e ra tu re (°C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Therm al Response (Z th JC ) 1 D = 0 .5 0 0.2 0 0 .1 0.1 0 PD M 0 .05 0.0 2 t SIN G LE P UL SE (T H ER M A L R E SP O NS E ) t2 N o te s: 1 . D u ty fa c to r D = t 0.0 1 0 .0 1 0 .0 0 0 0 1 1 1 / t2 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40SPbF V GE = C ie s = C re s = C oes = 20 0V , f = 1M H z C ge + C gc , Cc e S H O R T E D C gc C ce + C g c V GE , G a te -to -E m itter V oltage (V ) C , C a pa cita nce (pF ) 4000 3000 C ie s 2000 C o es 1000 C res A 0 1 10 VC E = 4 0 0 V IC = 31A 16 12 8 4 A 0 100 0 20 V C E , C ollector-to-Em itter Vo ltag e (V) 7.7 100 = 480V = 15V = 25 °C = 31A 7.6 7.5 7.4 A 7.3 0 10 20 30 40 50 60 R G , G ate R esistan ce (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 80 100 120 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage T otal Sw itc hing Lo sse s (m J) T o ta l S w itching L oss es (m J) V CC VGE TJ IC 60 Q g , Total G a te C ha rge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 7.8 40 R G = 10 Ω V G E = 1 5V V C C = 4 80 V I C = 62A I C = 31A 10 IC = 16A A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Ju nctio n Te m p erature (°C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC40SPbF RG TJ V CC V GE = = = = 1000 10 Ω 150°C 480V 15V I C , C ollecto r-to -Em itter Cu rrent (A) Total Switching Losses (mJ) 30 20 10 A 0 0 10 20 30 40 50 60 I C , Collector-to-Emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 70 VGGE E= 2 0V T J = 12 5 °C 100 S A FE O P E R A TIN G A R E A 10 1 1 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) Fig. 12 - Turn-Off SOA www.irf.com IRG4PC40SPbF L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V Q 480V 4 X IC@25°C 480µF 960V R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 9 0% 1 0% S VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4PC40SPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information E XAMPLE : T HIS IS AN IRF PE 30 WIT H AS S EMB LY L OT CODE 5657 AS S E MB LE D ON WW 35, 2000 IN T HE AS S E MB L Y LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT E RNAT IONAL RE CT IF IE R L OGO AS S E MB L Y L OT CODE PART NUMB ER IR F PE 30 56 035H 57 DAT E CODE YE AR 0 = 2000 WE E K 35 L INE H IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/