Complementary MOSFET ELM14614AA-N ■General Description ■Features ELM14614AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. ■Maximum Absolute Ratings • • • • N-channel P-channel Vds=40V Id=6A(Vgs=10V) Rds(on) < 31mΩ(Vgs=10V) Rds(on) < 45mΩ(Vgs=4.5V) Vds=-40V Id=-5A(Vgs=-10V) Rds(on) < 45mΩ(Vgs=-10V) Rds(on) < 63mΩ(Vgs=-4.5V) Parameter Symbol Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note Vds Vgs 40 ±20 -40 ±20 6.0 -5.0 Id 5.0 -4.0 A 1 Pulsed drain current Avalanche current Idm 4.5 20 -3.8 -20 A 2 Iar 12 14 A Single pulse avalanche energy L=0.3mH Tc=25°C Power dissipation Tc=70°C Eas 29 2.00 1.28 mJ Pd 22 2.00 1.28 Tj,Tstg 1.05 -55 to 150 1.05 -55 to 150 Ta=25°C Ta=70°C Ta=85°C Continuous drain current Tc=85°C Junction and storage temperature range V V W °C ■Thermal Characteristics Parameter Symbol Maximum junction-to-ambient Maximum junction-to-ambient t≤10s Steady-state Maximum junction-to-lead Maximum junction-to-ambient Steady-state t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja 1 8 2 7 3 6 4 5 Typ. Max. Unit Note N-ch 48.0 74.0 62.5 110.0 °C/W °C/W 1 35.0 48.0 50.0 62.5 °C/W °C/W 74.0 35.0 110.0 50.0 °C/W °C/W Rθjl Rθja Rθjl ■Pin configuration SOP-8(TOP VIEW) Device P-ch 3 1 3 ■Circuit Pin No. 1 2 Pin name SOURCE2 GATE2 3 4 5 SOURCE1 GATE1 DRAIN1 6 7 8 DRAIN1 DRAIN2 DRAIN2 7-1 • N-ch • P-ch D1 D2 G1 G2 S2 S1 Complementary MOSFET ELM14614AA-N ■Electrical Characteristics (N-ch) Parameter Symbol Conditions Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=10mA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Gate threshold voltage On state drain current Igss Static drain-source on-resistance Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Ism Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Total gate charge (4.5V) Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body-diode reverse recovery time Body-diode reverse recovery charge Vds=5V, Id=6A Is=1A, Vgs=0V Qg Qg Qgs Qgd 1.5 20 2.3 3.0 23.2 31.0 36.0 32.6 48.0 45.0 nA V A mΩ 20 A 404 500 pF Vgs=0V, Vds=0V, f=1MHz 95 37 2.7 120 50 4.0 pF pF Ω Vgs=10V, Vds=20V 8.3 4.2 10.0 5.1 nC nC 1.3 2.3 2.0 3.0 nC nC 4.2 3.3 15.6 5.5 4.5 21.0 ns ns ns 3.0 20.5 14.5 4.0 27.0 19.0 ns ns nC Vgs=0V, Vds=20V, f=1MHz Id=6A If=6A, dIf/dt=100A/μs If=6A, dIf/dt=100A/μs 22 0.77 μA 1.00 2.5 td(on) tr Vgs=10V, Vds=20V td(off) RL=3.3Ω, Rgen=3Ω tf trr Qrr 5 ±100 S V A Ciss Coss Crss Rg 1 Ta=55°C Vds=0V, Vgs=±20V Vgs=10V Rds(on) Id=6A Ta=125°C Vgs=4.5V, Id=5A Gfs Vsd Is V Vds=32V Vgs=0V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Forward transconductance Diode forward voltage Max.body-diode continuous current 40 2 NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using<300μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7-2 Complementary MOSFET AO4614 ELM14614AA-N ■Typical Electrical and Thermal Characteristics (N-ch) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 20 5V 25 Vds=5V 4.5V 15 4V 15 Id (A) Id (A) 20 125°C 10 10 Vgs=3.5V 5 5 0 0 1 2 3 4 0 5 2 Vds (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 4.5 Vgs (Volts) Figure 2: Transfer Characteristics 50 1.8 40 Normalized On-Resistance Rds(on) (m�) 25°C Vgs=4.5V 30 Vgs=10V Vgs=10V Id=6A 1.6 Vgs=4.5V Id=5A 1.4 1.2 1 20 0 5 10 15 20 0.8 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 80 Id=6A 70 1.0E+00 60 125°C 1.0E-01 50 Is (A) Rds(on) (m�) 25 125°C 40 1.0E-02 25°C 1.0E-03 30 20 1.0E-04 25°C 10 2 4 6 8 1.0E-05 10 0.0 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com 7-3 Complementary MOSFET AO4614 ELM14614AA-N TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 Capacitance (pF) 8 Vgs (Volts) 800 Vds=20V Id= 6A 6 4 2 600 Ciss 400 Coss Crss 200 0 0 0 2 4 6 8 0 10 10 Qg (nC) Figure 7: Gate-Charge Characteristics 40 Rds(on) limited 10�s 10.0 1ms 10ms 1s 1.0 10s Tj(max.)=150°C Ta=25°C 0.1s 1 10 Z� ja Normalized Transient Thermal Resistance 20 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Vds (Volts) D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W Tj(max.)=150°C Ta=25°C 0 0.001 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 40 10 DC 0.1 0.1 30 30 100�s Power (W) Id (Amps) 100.0 20 Vds (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 7-4 www.aosmd.com Complementary MOSFET ELM14614AA-N ■Electrical Characteristics (P-ch) Parameter Symbol Conditions Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-10mA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Static drain-source on-resistance Vgs=-10V Rds(on) Id=-5A Ta=125°C Vgs=-4.5V, Id=-2A Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Ism Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Total gate charge (4.5V) Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Ciss Coss Crss Rg Qg Qg Qgs Qgd Vds=-5V, Id=-4.8A Is=-1A, Vgs=0V -5 ±100 -1.5 -20 -1.9 -3.0 34.7 45.0 52.0 50.6 65.0 63.0 12 -0.75 -1.00 -2.5 μA nA V A mΩ mΩ S V A -20 A 657 870 pF Vgs=0V, Vds=0V, f=1MHz 143 63 6.5 200 110 10.0 pF pF Ω Vgs=-10V, Vds=-20V 13.6 6.8 17.0 8.5 nC nC 1.8 3.9 2.5 5.0 nC nC 7.5 6.7 26.0 10.0 9.0 34.0 ns ns ns 11.2 22.3 15.2 15.0 29.0 20.0 ns ns nC Vgs=0V, Vds=-20V f=1MHz Id=-5A td(on) tr Vgs=-10V, Vds=-20V td(off) RL=4Ω, Rgen=3Ω tf trr Qrr -1 Ta=55°C Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Gfs Vsd Is V Vds=-32V Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Max. body-diode continuous current -40 If=-5A, dIf/dt=100A/μs If=-5A, dIf/dt=100A/μs 2 NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using<300μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7-5 Complementary MOSFET AO4614 ELM14614AA-N ■Typical Electrical and Thermal Characteristics (P-ch) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 25 30 -5V -6V -Id (A) 20 Vds=-5V -4.5V 20 -4V 15 15 -Id (A) -10V 25 -3.5V 10 10 Vgs=-3V 5 1 2 3 4 0 5 1 -Vds (Volts) Fig 1: On-Region Characteristics 2 2.5 3 3.5 4 4.5 5 Normalized On-Resistance 1.8 55 Rds(on) (m�) 1.5 -Vgs (Volts) Figure 2: Transfer Characteristics 60 Vgs=-4.5V 50 45 40 Vgs=-10V 35 30 Vgs=-10V Id=-5A 1.6 1.4 Vgs=-4.5V Id=-4A 1.2 1 0.8 0 2 4 6 8 10 0 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1.0E+01 140 1.0E+00 Id=-5A 120 125°C 100 125°C 1.0E-01 -Is (A) Rds(on) (m�) 25°C 5 0 0 125°C 80 60 1.0E-02 1.0E-03 1.0E-04 40 25°C 20 2 3 4 25°C 1.0E-05 5 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com 7-6 Complementary MOSFET AO4614 ELM14614AA-N TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1000 Vds=-20V Id=-5A 800 Capacitance (pF) -Vgs (Volts) 8 6 4 2 600 400 0 5 10 0 40 Tj(max.)=150°C Ta=25°C 10ms 20 10 10s DC 0.1 1 10 100 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 30 30 Power (W) -Id (Amps) 10�s 100�s 1ms 1s 0.1 20 40 Rds(on) limited 1.0 10 -Vds (Volts) Figure 8: Capacitance Characteristics Tj(max.)=150°C, Ta=25°C 0.1s Z� ja Normalized Transient Thermal Resistance Crss 0 15 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 Coss 200 0 100.0 Ciss D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 www.aosmd.com 7-7