NCE Power NCE3080I Nce n-channel enhancement mode power mosfet Datasheet

Pb Free Product
NCE3080I
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NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3080I uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =30V,ID =80A
RDS(ON) <6.5mΩ @ VGS=10V
Schematic diagram
RDS(ON) < 10mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
Marking and pin assignment
● Uninterruptible power supply
100% UIS TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE3080I
NCE3080I
TO-251
-
-
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID
80
A
ID (100℃)
50
A
Pulsed Drain Current
IDM
170
A
Maximum Power Dissipation
PD
83
W
0.56
W/℃
EAS
150
mJ
TJ,TSTG
-55 To 175
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
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Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.8
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1
1.5
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
-
5.5
6.5
VGS=5V, ID=24A
-
7.5
10
VDS=5V,ID=24A
20
-
-
S
-
2330
-
PF
-
460
-
PF
-
230
-
PF
-
20
-
nS
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
gFS
mΩ
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=15V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=10V,ID=30A
-
15
-
nS
td(off)
VGS=10V,RGEN=2.7Ω
-
60
-
nS
-
10
-
nS
-
51
-
nC
-
14
-
nC
-
11
-
nC
-
-
1.2
V
-
-
80
A
TJ = 25°C, IF = 80A
-
32
50
nS
(Note3)
-
12
20
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=30A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
VSD
(Note 2)
IS
trr
Reverse Recovery Time
Reverse Recovery Charge
VGS=0V,IS=24A
Qrr
di/dt = 100A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=15V,VG=10V,L=1mH, Rg=25Ω
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NCE3080I
Test Circuit
1) EAS Test Circuits
2) Gate Charge Test Circuit:
3) Switch Time Test Circuit:
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ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-Junction Temperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance Normalized
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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Figure 6 Source- Drain Diode Forward
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Normalized BVdss
C Capacitance (pF)
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TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 VGS(th) vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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TO-251 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
2.200
2.400
0.087
0.094
A1
1.050
1.350
0.042
0.054
B
1.350
1.650
0.053
0.065
b
0.500
0.700
0.020
0.028
b1
0.700
0.900
0.028
0.035
c
0.430
0.580
0.017
0.023
c1
0.430
0.580
0.017
0.023
D
6.350
6.650
0.250
0.262
D1
5.200
5.400
0.205
0.213
E
5.400
5.700
0.213
0.224
e
2.300 TYP.
0.091 TYP.
e1
4.500
4.700
0.177
0.185
L
7.500
7.900
0.295
0.311
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NCE3080I
Attention
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