i, One.
TELEPHONE: (973) 376-2922
(212)227-6005
VCB = 60V
FAX: (973) 376-8960
lc = 300mA
PD = 500 mW one side
600 mW both sides
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
MD6001
MD6002
Silicon annular complementary-pair dual transistor
is designed for high-speed switching circuits, DC to
VHP amplifier applications and complementary circuitry.
PNP
CASE 32
NPN
PIN CONNECTIONS
(BOTTOM VIEW)
MAXIMUM RATINGS (each side) (TA = 25°C unless otherwise specified)
Test Conditions and Limits are given in magnitudes only. Care must be taken to insure the application of proper polarities for the NPN or PNP transistor, respectively.
Value
Unit
60
Vdc
30
Vdc
5
Vdc
300
mAdc
+200
°C
-65 to +200
°C
Symbol
Rating
Collector-Base Voltage
VCB
Collector -Emitter Voltage
V CEO
Emitter -Base Voltage
V EB
DC Collector Current
(Limited by PD)
<C
Junction Temperature
TJ
Storage Temperature
T
stg
ONE SIDE BOTH SIDES
Total Device Dissipation @ T. = 25°C
Derate above 25" C
PD
Total Device Dissipation @ TC = 25°C
Derate above 25"C
PD
500
2.9
600
3.4
mW
mW/°C
1.2
6.83
2.0
11.43
W
mW/°C
NPN SATURATED SWITCHING TIME TEST CIRCUITS
for PNP Switching Tests, reverse diodes, voltage polarities, and input pulses.
FIGURE 1 - NPN TURN-ON TIME
GENERATOR
RISE TIME s= 2 us
PW& 200ns
DUTY CYCLE-2%
FIGURE 2 - NPN TURN-OFF TIME
10 to 100 /is
+30V
< 5ns
+9.9V
Cs- -' 12 pF
s is total shunt capacitance of oscilloscope and test fixture.
DC includes oscilloscope resistance.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Seini-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
MD6001, MD6002 (continued)
ELECTRICAL CHARACTERISTICS
(each side) (TA = 25°C unless otherwise noted)
Symbol | Min| Max) Unit|
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Uc = 10 MAdc, I E = 0)
BV CBO
Collector -Emitter Breakdown Voltage*
(Ic - 10 mAdc, IB = 0)
BVCEO*
Emitter-Base Breakdown Voltage
(IE = 10 /iAdc, Ic = 0)
BV EBO
Collector Cutoff Current
(V CE = 50 Vdc, V EB - 3 Vdc)
(V
V Cj
60
30
5
D
Vdc
Vdc
—
Vdc
—
MAdc
: CEX
0.02
= 50 Vdc, V^ = 3 Vdc, T. = 150"C)
fcj
—
30
"
Base Cutoff Current
(V C E = 50 Vdc, V £ B = 3 Vdc)
!BL
jjAdc
—
0.03
ON CHARACTERISTICS
DC Current Gain*
(Ip = 0 . 1 mAdc, V p
(Ir = 1.0 mAdc, Vp
^
(lr = 10 mAdc, V
L
= 10 Vdc)
MD6001
MD6002
= 10 Vdc)
MD6001
MD6002
= 10 Vdc)
h FE*
20
35
25
50
35
75
40
100
20
50
20
30
MD6001
MD6002
Ct
(Ir = 150 mAdc, Vp,, = 10 Vdc)
C
^
MD6001
MD6002
(Ip = 150 mAdc, V p = 1 Vdc)
^
^
(lp = 300 mAdc, Vp., = 10 Vdc)
MD6001
MD6002
MD6001
MD6002
CE
V
Base- Emitter Saturation Voltage*
(Ic = 150 mAdc, I = 15 mAdc)
BE(sat)
*
Vdc
—
1.3
2.0
—
0.4
(Ic = 300 mAdc, IB = 30 mAdc)
v
Collector-Emitter Saturation Voltage*
(Ic = 150 mAdc, IB = 15 mAdc)
120
300
*
CE(sat)
Vdc
(Ic = 300 mAdc, IB = 30 mAdc)
1.4
DYNAMIC CHARACTERISTICS
Gain - Bandwidth Product
(Ic = 50 mAdc, V CE = 20 Vdc, f = 100 MHz )
fT
Collector Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 100 kHz)
Cob
Collector Input Capacitance
(V n _ = 2 Vdc, Ip - 0, f = 100 kHz)
C ib
D tj
Delay Time
Fall Time
MHz
PF
—
C
pF
—
30
—
20
ns
VCG = 30 V,
t
—
40
ns
See Figure 2
I_ = 150 mA, !„, = 15 mA
{>
t>l
V CG = 30 V, IG = 150 mA
t
--
280
ns
!B1
lf
—
70
ns
=
VBE(OH)
!B2 = 15 mA
= 0. 5 V
8
See Figure 1
Rise Time
Storage Time
200
—
4d