IRF IRFE230 Simple drive requirement Datasheet

PD-91715C
IRFE230
JANTX2N6798U
JANTXV2N6798U
REPETITIVE AVALANCHE AND dv/dt RATED
®
HEXFET TRANSISTORS
SURFACE MOUNT (LCC-18)
REF:MIL-PRF-19500/557
200V, N-CHANNEL
Product Summary
Part Number
IRFE230
BVDSS
RDS(on)
200V
0.40Ω
ID
5.5A
The leadless chip carrier (LCC) package represents the
logical next step in the continual evolution of surface
mount technology. Desinged to be a close replacement
for the TO-39 package, the LCC will give designers the
extra flexibility they need to increase circuit board density.
International Rectifier has engineered the LCC package
to meet the specific needs of the power market by
increasing the size of the bottom source pad, thereby
enhancing the thermal and electrical performance. The
lid of the package is grounded to the source to reduce
RF interference.
LCC-18
Features:
n
n
n
n
n
n
n
n
n
Surface Mount
Small Footprint
Alternative to TO-39 Package
Hermetically Sealed
Dynamic dv/dt Rating
Avalanche Energy Rating
Simple Drive Requirements
Light Weight
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
5.5
3.5
22
25
0.20
±20
110
5.5
2.5
6.3
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5 S)
0.42 (typical)
g
For footnotes refer to the last page
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1
01/27/15
IRFE230, JANTX2N6798U
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
Parameter
Min
Drain-to-Source Breakdown Voltage
200
Typ Max Units
—
—
V
—
0.27
—
V/°C
—
—
2.0
3.4
—
—
—
—
—
—
—
—
0.40
0.46
4.0
—
25
250
VGS(th)
g fs
IDSS
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
42
5.3
28
30
50
50
40
—
C iss
C oss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
740
240
74
—
—
RDS(on)
Ω
V
S
µA
nA
nC
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 3.5A Ã
VGS = 10V, ID = 5.5A Ã
VDS = VGS, ID = 250µA
VDS = 15V, IDS = 3.5A Ã
VDS = 160V, VGS = 0V
VDS =160V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 5.5A,
VDS =100V
VDD = 100V, ID = 5.5A,
VGS = 10V, RG = 7.5Ω
ns
nH
Measured from the center of
drain pad to center of source
pad
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
5.5
22
1.4
500
6.0
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 5.5A, VGS = 0V Ã
Tj = 25°C, IF = 5.5A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction to Case
Junction to PC Board
Min Typ Max
—
—
—
—
5.0
19
Units
°C/W
Test Conditions
Soldered to a copper clad PC board
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
2
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IRFE230, JANTX2N6798U
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
4.5V
1
TJ = 150 ° C
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
6
7
8
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
5
10
100
Fig 2. Typical Output Characteristics
100
4
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
ID = 5.5A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFE230, JANTX2N6798U
1600
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1200
Ciss
800
Coss
400
Crss
0
1
10
100
ID = 5.5A
V DS = 160V
V DS = 100V
V DS = 40V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
10
TJ = 150 ° C
0.1
0.4
TJ = 25 ° C
VGS = 0 V
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1
20
Q G, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.6
OPERATION IN THIS AREA LIMITED
BY R DS (on)
10
100µs
1ms
1
10ms
0.1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFE230, JANTX2N6798U
6.0
V GS
ID , Drain Current (A)
RD
V DS
5.0
RG
4.0
3.0
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
0.0
90%
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFE230, JANTX2N6798U
15V
L
VDS
D.U.T
RG
10V
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
250
ID
2.5A
3.5A
5.5A
TOP
200
BOTTOM
150
100
50
0
25
50
100
125
150
Starting T J , Junction Temperature (°C)
V(BR)DSS
tp
75
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
10 V
QGS
.2µF
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFE230, JANTX2N6798U
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, Starting TJ = 25°C, L= 7.3mH
Peak IAS = 5.5A, VGS =10V, RG= 25Ω
 ISD ≤ 5.5A, di/dt ≤99A/µs, VDD ≤ 200V,
TJ ≤ 150°C, Suggested RG =7.5 Ω
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — LCC-18
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/2015
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