AOSMD AO3420 N-channel enhancement mode field effect transistor Datasheet

AO3420
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3420 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. This device is
suitable for use as a uni-directional or bi-directional
load switch. Standard Product AO3420 is Pb-free
(meets ROHS & Sony 259 specifications). AO3420L
is a Green Product ordering option. AO3420 and
AO3420L are electrically identical.
VDS (V) = 20V
ID = 6 A (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 4.5V)
RDS(ON) < 42mΩ (VGS = 2.5V)
RDS(ON) < 55mΩ (VGS = 1.8V)
TO-236
(SOT-23)
Top View
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±12
V
25
1.4
W
0.9
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
5
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
6
TA=25°C
Power Dissipation A
Maximum
20
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
AO3420
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
ID(ON)
On state drain current
Conditions
Min
ID=250µA, VGS=0V
VDS=16V, VGS=0V
20
VDS=0V, VGS=±12V
VDS=VGS ID=250uA
VGS=4.5V, VDS=5V
0.5
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
Forward Transconductance
VDS=5V, ID=3.8A
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Units
V
µA
100
nA
0.7
1
V
19
29
24
35
22
35
45
27
42
55
25
TJ=125°C
gFS
Max
1
5
TJ=55°C
VGS=10V, ID=6A
RDS(ON)
Typ
A
24
0.75
mΩ
S
1
V
2
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS=0V, VDS=10V, f=1MHz
630
164
pF
pF
Rg
VGS=0V, VDS=0V, f=1MHz
137
1.5
pF
Ω
VGS=4.5V, VDS=10V, ID=6A
8.8
1
nC
nC
3.7
5.5
14
29
10.2
nC
ns
ns
ns
ns
15.2
ns
nC
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
tf
trr
Qrr
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=5V, VDS=10V, RL=1.7Ω,
RGEN=6Ω
IF=6A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
6.3
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev0 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
VGS=5V
3V
4V
VGS =2V
VDS=5V
15
ID(A)
ID(A)
20
10
VGS =1.5V
10
125°C
125°C
5
25°C
25°C
0
0
1
2
3
4
0
5
0.0
0.5
VDS(Volts)
50
Normalize ON-Resistance
RDS(ON) (mΩ)
40
VGS=2.5V
30
VGS=4.5V
20
VGS=10V
10
4
6
8
10
VGS=1.8V
ID=2A
ID=1A
1.0
13
25
50
75
100
125
150
175
1E+00
125°C
1E-01
IS(A)
RDS(ON)(mΩ)
ID=6A
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
25°C
1E-02
1E-03
30
20
VGS=10V
3.6
ID=3.8A
1.2
0
125°C
125°C
1.7
VGS=4.5V
ID=5A
0.8
ID=6A
70
40
2.5
1E+01
ID=3.8A
60
VGS=2.5V
ID=3.5A
ID=4A
1.4
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
2.0
270
1.6
VGS=1.8V
2
1.5
VGS(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristi cs
0
1.0
1E-04
25°C
25°C
1E-05
10
0
2
4
6
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
8
0.0
0.2
0.4
0.6
0.8
VSD(Volts)
Figure 6: Body-Diode Characteristics
1.0
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1400
VDS=10V
ID=6A
1200
Capacitance (pF)
VGS(Volts)
4
VDS=15V
ID=3.8A
3
2
1
1000
Ciss
800
600
Coss
400
200
Coss
Crss
Crss
0
0
0
2
4
6
8
0
10
5
10
15
20
VDS(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
270
20
TJ(Max)=150°C, TA=25°C
10µs
100µs
1
1ms
DC
0.1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
1.7
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
3.6
10
5
10ms
100m
1s
0.1
TJ(Max)=150°C
TA=25°C
15
RDS(ON)
10 limited
Power (W)
ID (Amps)
100
100
0
0.001
13
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
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