SRAM MT5C1009 Austin Semiconductor, Inc. 128K x 8 SRAM PIN ASSIGNMENT (Top View) WITH CHIP & OUTPUT ENABLE 32-Pin DIP (C, CW) 32-Pin SOJ (SOJ) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS •SMD 5962-89598 •MIL-STD-883 FEATURES Access Times: 15, 20, 25, 35, 45, 55 and 70 ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS process Single +5V (+10%) Power Supply Easy memory expansion with CE\ and OE\ options. All inputs and outputs are TTL compatible 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 NC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VCC A15 CE2 NC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 32-Pin LCC (ECA) 32-Pin Flat Pack (F) NC A12 A14 A10 6 NC VCC A15 CE2 • • • • • • • 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-Pin LCC (EC) 32-Pin SOJ (DCJ) 4 3 2 1 32 31 30 • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS MARKING -15 -20 -25 -35 -45 -55* -70* 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 NC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 WE \ A13 A8 A9 A11 OE \ A10 CE1\ DQ8 14 15 16 17 18 19 20 DQ2 DQ3 VSS DQ4 DQ5 DQ6 DQ7 OPTIONS GENERAL DESCRIPTION • Package(s)• Ceramic DIP (400 mil) Ceramic DIP (600 mil) Ceramic LCC Ceramic LCC Ceramic Flatpack Ceramic SOJ Ceramic SOJ C CW EC ECA F DCJ SOJ • 2V data retention/low power L The MT5C1009 is a 1,048,576-bit high-speed CMOS static RAM organized as 131,072 words by 8 bits. This device uses 8 common input and output lines and has an output enable pin which operate faster than address access times during READ cycle. For design flexibility in high-speed memory applications, this device offers chip enable (CE\) and output enable (OE\) features. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. The devices offer a reduced power standby mode when disabled, allowing system designs to achieve low standby power requirements. The “L” version offers a 2V data retention mode, reducing current consumption to 2mW maximum. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. It is particularly well suited for use in high-density, high-speed system applications. No. 111 No. 112 No. 207 No. 208 No. 303 No. 501 No. 507 *Electrical characteristics identical to those provided for the 45ns access devices. For more products and information please visit our web site at www.austinsemiconductor.com MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM MT5C1009 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM VCC I/O CONTROL DQ8 ROW DECODER A0 A1 A2 A3 A4 A5 A6 A7 A12 GND 262,144-BIT MEMORY ARRAY DQ1 CE\ COLUMN DECODER OE\ WE\ A8 A9 A10 A11 A13 A14 A15 A16 POWER DOWN NOTE: The two least significant row address bits (A8 and A6) are encoded using gray code. TRUTH TABLE MT5C1009 Rev. 5.5 8/01 CE\ WE\ OE\ MODE I/O PIN SUPPLY CURRENT H X X Not Selected High-Z ISBT2, ISBC2 X X X Not Selected High-Z ISBT2, ISBC2 L H H Output Disable High-Z ICC L H L Read DOUT ICC L L X Write DIN ICC Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM MT5C1009 Austin Semiconductor, Inc. *Stresses at or greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods will affect reliability. Refer to page 17 of this datasheet for a technical note on this subject. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity. ABSOLUTE MAXIMUM RATINGS* Supply Voltage Range (Vcc).............................-0.5V to +6.0V Storage Temperature......................................-65°C to +150°C Short Circuit Output Current (per I/O)….......................20mA Voltage on any Pin Relative to Vss..................-0.5V to +7.0V Max Junction Temperature**.......................................+150°C Power Dissipation ...............................................................1 W ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC & -45oC to +85oC; VCC = 5.0V +10%) DESCRIPTION Input High (Logic 1) Voltage CONDITIONS SYM VIH MIN 2.2 VIL Input Low (Logic 0) Voltage MAX VCC+0.5 UNITS V NOTES 1 -0.5 0.8 V 1, 2 0V<VIN<VCC ILI -10 10 µA Output(s) disabled 0V<VOUT<VCC ILO -10 10 µA Output High Voltage IOH=-4.0mA VOH 2.4 Output Low Voltage IOL=8.0mA VOL Input Leakage Current Output Leakage Current V 1 -15 -20 MAX -25 -35 -45 ICCSP 250 140 140 135 125 mA ICCLP 250 140 130 125 115 mA CE\ > VIH; All Other Inputs < VIL or > VIH, VCC = MAX f = 0 Hz ISBT 25 25 25 25 25 mA CE\ > VCC -0.2V; VCC = MAX ISBCSP 10 10 10 10 10 mA Inputs = VIH or VIL f = 0 Hz ISBCLP 10 10 10 10 10 mA CONDITIONS CE\ < VIL; OE\ = WE\ = VIH, VCC = MAX, f = MAX = 1/tRC (MIN) Output Open (1) L version only Power Supply Current: Standby 1 SYM PARAMETER Power Supply Current: Operating 0.4 V UNITS NOTES 3 CAPACITANCE DESCRIPTION Input Capacitance (A0-A16) Output Capacitance Input Capacitance (CE\, WE\, OE\) MT5C1009 Rev. 5.5 8/01 CONDITIONS SYM o TA = 25 C, f = 1MHz VCC = 5V CI MAX 12 UNITS pF NOTES 4 CO 20 pF 4 CI 14 pF 4 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM MT5C1009 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC & -40oC to +85oC; VCC = 5.0V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width (OE High) Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z MT5C1009 Rev. 5.5 8/01 -15 -20 -25 -35 -45 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tAOE tLZOE tHZOE 15 tWC tCW tAW tAS tAH tWP tDS tDH 15 12 12 0 0 12 8 0 5 tLZWE tHZWE 20 15 15 3 3 25 20 20 3 3 7 7 0 3 3 0 20 ns ns ns ns ns ns ns ns ns ns 20 20 0 15 35 25 25 0 0 25 20 0 5 10 20 45 45 15 15 10 ns ns ns ns ns ns ns ns ns 3 3 0 25 20 20 0 0 20 15 0 5 9 35 35 10 10 6 45 3 3 0 20 12 12 0 0 12 10 0 5 7 25 25 8 6 7 35 45 35 35 0 0 35 20 0 5 15 4, 6, 7 4, 6, 7 4, 6, 7 4, 6, 7 4, 6, 7 4, 6, 7 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM MT5C1009 Austin Semiconductor, Inc. +5V +5V AC TEST CONDITIONS 480 Input pulse levels ................................... Vss to 3.0V Input rise and fall times ....................................... 5ns Input timing reference levels ............................. 1.5V Output reference levels ..................................... 1.5V Output load .............................. See Figures 1 and 2 Q 30 255 480 Q Fig. 1 Output Load Equivalent 4. 5. 6. Fig. 2 Output Load Equivalent 7. At any given temperature and voltage condition, t HZCE is less than tLZCE, and tHZWE is less than t LZWE and tHZOE is less than tLZOE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. NOTES 1. 2. 3. 5 pF 255 All voltages referenced to VSS (GND). -2V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. t LZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV typical from steady state voltage, allowing for actual tester RC time constant. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) CONDITIONS DESCRIPTION VCC for Retention Data CE\ > (VCC - 0.2V) VIN > (VCC - 0.2V) or < 0.2V Data Retention Current SYMBOL MIN MAX UNITS NOTES VDR 2 --- V ICCDR1* 0.75 mA ICCDR2 1.0 mA --- ns 4 ns 4, 11 VCC = 2V Chip Deselect to Data Retention Time Operation Recovery Time tCDR 0 tR tRC * Low Power, -20 device only LOW Vcc DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V VDR > 2V tR t CDR CE1\ MT5C1009 Rev. 5.5 8/01 VIH VIL 1234 123456789 123 123456789 123 1234 123456789 123 1234 123456789 123 1234 123456789 123 4.5V VDR 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 123 123 123 123 123 DON’T CARE 1234 1234 1234 1234UNDEFINED Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM MT5C1009 Austin Semiconductor, Inc. READ CYCLE NO. 1 8, 9 tRC tRC ADDRESS VALID tAA tAA tOH tOH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 7, 8, 10, 12 t RC tRC CE\ tAOE tAOE t HZOE tHZOE t LZOE tLZOE OE\ tLZCE tLZCE tHZCE tHZCE ttACE ACE DQ DATA VALID t PU tPU t PD tPD Icc MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM MT5C1009 Austin Semiconductor, Inc. WRITE CYCLE NO. 1 12, 13 (Chip Enabled Controlled) t WC tWC ADDRESS t AW tAW t AS tAS tAH tAH t CW tCW CE\ t WP1 tWP1 WE\ t DS tDS D tDH tDH DATA VAILD Q HIGH Z WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled) t WC tWC ADDRESS t AW tAW tAH tAH t CW tCW CE\ t AS tAS t WP1 tWP1 WE\ tDH tDH D DATA VALID Q HIGH-Z NOTE: Output enable (OE\) is inactive (HIGH). MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM MT5C1009 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #111 (Package Designator C) SMD 5962-89598, Case Outline Z D S1 S2 A Q L1 Pin 1 L S e b b1 E NOTE 0o to 15o SYMBOL A b b1 c D E E1 e L L1 Q S S1 S2 NOTE: c E1 SMD SPECIFICATIONS MIN MAX --0.232 0.014 0.023 0.038 0.065 0.008 0.015 --1.700 0.350 0.405 0.390 0.420 0.100 BSC 0.125 0.200 0.150 --0.015 0.060 --0.100 0.005 --0.005 --Either configuration in detail A is allowed on SMD. *All measurements are in inches. MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM MT5C1009 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #112 (Package Designator CW) SMD 5962-89598, Case Outline X D A Q L b e Pin 1 b2 E C eA SMD Specifications SYMBOL A b b2 C D E eA e Q L MIN 0.089 0.016 0.045 0.009 1.585 0.585 MAX 0.111 0.020 0.050 0.011 1.615 0.605 0.600 BSC 0.100 BSC 0.040 0.125 0.060 0.175 *All measurements are in inches. MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM MT5C1009 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #207 (Package Designator EC) SMD 5962-89598, Case Outline U See Detail A A L1 D L e b h x 45o Detail A E L2 b2 b1 SYMBOL A b b1 b2 D E e h L L1 L2 SMD SPECIFICATIONS MIN MAX 0.080 0.100 0.022 0.028 0.006 0.022 0.040 --0.800 0.840 0.392 0.408 0.050 BSC 0.012 REF 0.070 0.080 0.090 0.110 0.003 0.015 *All measurements are in inches. MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM MT5C1009 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #208 (Package Designator ECA) SMD 5962-89598, Case Outline M D1 A L1 e E1 E See Detail A L D b2 B1 Detail A b1 SYMBOL A B1 b1 b2 D D1 E E1 e L L1 SMD SPECIFICATIONS MIN MAX 0.060 0.080 0.022 0.028 0.004 0.014 0.040 0.050 0.442 0.458 0.300 BSC 0.540 0.560 0.400 BSC 0.050 BSC 0.045 0.055 0.075 0.095 *All measurements are in inches. MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 SRAM MT5C1009 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #303 (Package Designator F) SMD 5962-89598, Case Outline T E L Pin 1 Index e 32 1 17 16 D b Bottom View S S1 E1 Top View A c Q E2 E3 SYMBOL A b c D E E1 E2 E3 e L Q S S1 SMD SPECIFICATIONS MIN MAX 0.097 0.125 0.015 0.019 0.003 0.009 --0.830 0.400 0.420 --0.450 0.180 --0.030 --0.050 BSC 0.250 0.370 0.026 0.045 --0.045 0.000 --- *All measurements are in inches. MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12 SRAM MT5C1009 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #501 (Package Designator DCJ) SMD 5962-89598, Case Outline 7 A D e D1 B1 E2 b E1 E A2 SYMBOL A A2 B1 b D D1 E E1 E2 e SMD SPECIFICATIONS MIN MAX 0.135 0.144 0.026 0.036 0.030 0.040 0.015 0.019 0.812 0.828 0.740 0.755 0.405 0.415 0.435 0.445 0.360 0.380 0.050 BSC *All measurements are in inches. MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 13 SRAM MT5C1009 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* See Detail A ASI Case #507 (Package Designator SOJ) SMD 5962-89598, Case Outline Y A1 j 1 32 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 B D1 B2 D B1 E2 e e2 e1 A2 Base Plane 17 A S 16 S1 B3 Seating Plane E E1 SYMBOL A A1 A2 B B1 B2 B3 D D1 E E1 E2 e e1 e2 j S S1 123 123 123 123123 123 Detail A SMD SPECIFICATIONS MIN MAX 0.120 0.165 0.088 0.120 0.070 REF 0.010 REF .030R TYP 0.020 REF 0.025 0.045 0.816 0.838 0.75 REF 0.419 0.431 0.430 0.445 0.360 0.380 0.050 BSC 0.038 TYP 0.005 0.005 TYP 0.030 0.040 0.020 TYP *All measurements are in inches. MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 14 SRAM MT5C1009 Austin Semiconductor, Inc. ORDERING INFORMATION EXAMPLE: MT5C1009C-25/XT Device Package Speed Options** Process Number Type ns MT5C1009 C -15 L /* MT5C1009 CW -15 L /* MT5C1009 C -20 L /* MT5C1009 CW -20 L /* MT5C1009 C -25 L /* MT5C1009 CW -25 L /* MT5C1009 C -35 L /* MT5C1009 CW -35 L /* MT5C1009 C -45 L /* MT5C1009 CW -45 L /* MT5C1009 C -55 L /* MT5C1009 CW -55 L /* MT5C1009 C -70 L /* MT5C1009 CW -70 L /* EXAMPLE: MT5C1009EC-45L/IT Device Package Speed Options** Process Number Type ns MT5C1009 EC -15 L /* MT5C1009 ECA -15 L /* MT5C1009 EC -20 L /* MT5C1009 ECA -20 L /* MT5C1009 EC -25 L /* MT5C1009 ECA -25 L /* MT5C1009 EC -35 L /* MT5C1009 ECA -35 L /* MT5C1009 EC -45 L /* MT5C1009 ECA -45 L /* MT5C1009 EC -55 L /* MT5C1009 ECA -55 L /* MT5C1009 EC -70 L /* MT5C1009 ECA -70 L /* EXAMPLE: MT5C1009F-70L/883C Device Package Speed Options** Process ns Number Type EXAMPLE: MT5C1009DCJ-35/883C Device Package Speed Options** Process Number Type ns MT5C1009 DCJ -15 L /* MT5C1009 SOJ -15 L /* MT5C1009 DCJ -20 L /* MT5C1009 SOJ -20 L /* MT5C1009 DCJ -25 L /* MT5C1009 SOJ -25 L /* MT5C1009 DCJ -35 L /* MT5C1009 SOJ -35 L /* MT5C1009 DCJ -45 L /* MT5C1009 SOJ -45 L /* MT5C1009 DCJ -55 L /* MT5C1009 SOJ -55 L /* MT5C1009 DCJ -70 L /* MT5C1009 SOJ -70 L /* MT5C1009 F -15 L /* MT5C1009 F -20 L /* MT5C1009 F -25 L /* MT5C1009 F -35 L /* MT5C1009 F -45 L /* MT5C1009 F -55 L /* MT5C1009 F -70 L /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing -40oC to +85oC -55oC to +125oC -55oC to +125oC ** OPTIONS L = 2V data retention, low power standby MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 15 SRAM Austin Semiconductor, Inc. MT5C1009 ASI TO DSCC PART NUMBER CROSS REFERENCE ASI Package Designator EC & ECA ASI Package Designator C & CW ASI Part # SMD Part # ASI Part # SMD Part # MT5C1009C-20/883C MT5C1009C-20L/883C MT5C1009C-25L/883C MT5C1009C-25/883C MT5C1009C-35L/883C MT5C1009C-35/883C MT5C1009C-45L/883C MT5C1009C-45/883C MT5C1009C-55L/883C MT5C1009C-55/883C MT5C1009C-70L/883C MT5C1009C-70/883C 5962-8959839MZA 5962-8959840MZA 5962-8959812MZA 5962-8959829MZA 5962-8959811MZA 5962-8959828MZA 5962-8959810MZA 5962-8959827MZA 5962-8959809MZA 5962-8959826MZA 5962-8959808MZA 5962-8959825MZA MT5C1009EC-20/883C MT5C1009EC-20L/883C MT5C1009EC-25L/883C MT5C1009EC-25/883C MT5C1009EC-35L/883C MT5C1009EC-35/883C MT5C1009EC-45L/883C MT5C1009EC-45/883C MT5C1009EC-55L/883C MT5C1009EC-55/883C MT5C1009EC-70L/883C MT5C1009EC-70/883C 5962-8959839MUA 5962-8959840MUA 5962-8959812MUA 5962-8959829MUA 5962-8959811MUA 5962-8959828MUA 5962-8959810MUA 5962-8959827MUA 5962-8959809MUA 5962-8959826MUA 5962-8959808MUA 5962-8959825MUA MT5C1009CW-20/883C MT5C1009CW-20L/883C MT5C1009CW-25L/883C MT5C1009CW-25/883C MT5C1009CW-35L/883C MT5C1009CW-35/883C MT5C1009CW-45L/883C MT5C1009CW-45/883C MT5C1009CW-55L/883C MT5C1009CW-55/883C MT5C1009CW-70L/883C MT5C1009CW-70/883C 5962-8959839MXA 5962-8959840MXA 5962-8959812MXA 5962-8959829MXA 5962-8959811MXA 5962-8959828MXA 5962-8959810MXA 5962-8959827MXA 5962-8959809MXA 5962-8959826MXA 5962-8959808MXA 5962-8959825MXA MT5C1009ECA-20/883C MT5C1009ECA-20L/883C MT5C1009ECA-25L/883C MT5C1009ECA-25/883C MT5C1009ECA-35L/883C MT5C1009ECA-35/883C MT5C1009ECA-45L/883C MT5C1009ECA-45/883C MT5C1009ECA-55L/883C MT5C1009ECA-55/883C MT5C1009ECA-70L/883C MT5C1009ECA-70/883C 5962-8959839MMA 5962-8959840MMA 5962-8959812MMA 5962-8959829MMA 5962-8959811MMA 5962-8959828MMA 5962-8959810MMA 5962-8959827MMA 5962-8959809MMA 5962-8959826MMA 5962-8959808MMA 5962-8959825MMA ASI Package Designator DCJ ASI Package Designator F ASI Part # MT5C1009F-20/883C MT5C1009F-20L/883C MT5C1009F-25L/883C MT5C1009F-25/883C MT5C1009F-35L/883C MT5C1009F-35/883C MT5C1009F-45L/883C MT5C1009F-45/883C MT5C1009F-55L/883C MT5C1009F-55/883C MT5C1009F-70L/883C MT5C1009F-70/883C ASI Part # SMD Part # MT5C1009DCJ-20/883C MT5C1009DCJ-20L/883C MT5C1009DCJ-25L/883C MT5C1009DCJ-25/883C MT5C1009DCJ-35L/883C MT5C1009DCJ-35/883C MT5C1009DCJ-45L/883C MT5C1009DCJ-45/883C MT5C1009DCJ-55L/883C MT5C1009DCJ-55/883C MT5C1009DCJ-70L/883C MT5C1009DCJ-70/883C 5962-8959839MTA 5962-8959840MTA 5962-8959812MTA 5962-8959829MTA 5962-8959811MTA 5962-8959828MTA 5962-8959810MTA 5962-8959827MTA 5962-8959809MTA 5962-8959826MTA 5962-8959808MTA 5962-8959825MTA SMD Part # 5962-8959839M7A 5962-8959840M7A 5962-8959812M7A 5962-8959829M7A 5962-8959811M7A 5962-8959828M7A 5962-8959810M7A 5962-8959827M7A 5962-8959809M7A 5962-8959826M7A 5962-8959808M7A 5962-8959825M7A ASI Package Designator SOJ ASI Part # SMD Part # MT5C1009SOJ-20/883C MT5C1009SOJ-20L/883C MT5C1009SOJ-25L/883C MT5C1009SOJ-25/883C MT5C1009SOJ-35L/883C MT5C1009SOJ-35/883C MT5C1009SOJ-45L/883C MT5C1009SOJ-45/883C MT5C1009SOJ-55L/883C MT5C1009SOJ-55/883C MT5C1009SOJ-70L/883C MT5C1009SOJ-70/883C 5962-8959839M7A 5962-8959840M7A 5962-8959812M7A 5962-8959829M7A 5962-8959811M7A 5962-8959828M7A 5962-8959810M7A 5962-8959827M7A 5962-8959809M7A 5962-8959826M7A 5962-8959808M7A 5962-8959825M7A * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 16 SRAM Austin Semiconductor, Inc. MT5C1009 DATE: 2/6/01 Technical Note: 128Kx8 SRAM – Maximum Recommended Supply Voltage and Ambient Temperature Compliance: This product fully meets and is tested in compliance with SMD# 5962-89598 and tested in accordance with JESD78. Specific Product Affected: Die Manufacturer: Alliance Semiconductor Corporation Die Name: AS2008SA Device Types: MT5C1008 , MT5C1009 Speed Grades: All Package Designators: All Identifying Date Code Marking: Change implemented on product starting with date code 0100. Characteristic Identified: Austin Semiconductor, Inc. has received notification from this die vendor, Alliance Semiconductor Corp., that operation at high Vcc’s of 6 volts and beyond may result in a latch-up condition. This can cause permanent damage to the device. Recommendation: During use in system applications and during manufacturing processes, including Burn-In and Test, the devices should not be subjected to Vcc Supply Voltages higher than 5.5Volts at 125°C. MT5C1009 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 17