DMN60H080DS N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features BVDSS RDS(ON) Package ID TA = +25°C Low Input Capacitance High BVDSS Rating for Power Application 600V 100Ω @ VGS = 10V SOT23 80mA Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Applications Mechanical Data Case: SOT23 Case Material: Molded Plastic “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 e3 Motor Control Backlighting DC-DC Converters Power Management Functions Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) D D G G a t e SOT23 S G S P ESD PROTECTED r o t e c t i o n Ordering Information (Note 4) Part Number DMN60H080DS-7 DMN60H080DS-13 Notes: Case SOT23 SOT23 Top View Packaging 3000/Tape & Reel 10000/Tape & Reel D i o d e 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information K31 = Product Type Marking Code YM or YM= Date Code Marking Y or Y = Year (ex: E = 2017) M = Month (ex: 9 = September) K31 Date Code Key Year Code Month Code 2017 E Jan 1 2018 F Feb 2 DMN60H080DS Document number: DS39475 Rev. 3 - 2 Mar 3 2019 G Apr 4 2020 H May 5 Jun 6 1 of 7 www.diodes.com 2021 I Jul 7 2022 J Aug 8 Sep 9 2023 K Oct O 2024 L Nov N Dec D May 2017 © Diodes Incorporated DMN60H080DS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Pulsed Drain Current @ TSP = +25°C (Note 7) ID Value 600 ±20 70 56 Unit V V ID 80 70 mA ID 40 32 mA mA 50 40 0.2 ID IDM mA A Thermal Characteristics Characteristic Power Dissipation, @TA = +25°C (Note 5) Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5) Power Dissipation, @TA = +25°C (Note 6) Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RθJA PD RθJA TJ, TSTG Value 0.70 174 1.10 99 -55 to +150 Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Body Leakage ON CHARACTERISTICS (Note 8) Symbol Min Typ Max Unit BVDSS IDSS IGSS 600 — — — — — — 1 ±10 V µA µA VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = ±20V, VDS = 0V Gate Threshold Voltage VGS(TH) RDS(ON) |Yfs| VSD — — 67 95 76 — 3.0 2.6 100 290 — 1.5 V V Static Drain-Source On-Resistance 1.5 1.5 — — — — ms V VDS = VGS, ID = 250µA VDS = VGS, ID = 8µA VGS = 10V, ID = 60mA VGS = 4.5V, ID = 60mA VDS = 10V, ID = 60mA VGS = 0V, IS = 50mA Ciss Coss Crss Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — 25 5.2 1.4 1.7 0.3 0.9 7 10 21 158 189.1 32 — — — — — — — — — — — — pF VDS = 25V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDD = 300V, ID = 0.01A Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: Ω ns ns ns ns ns nC Test Condition VDD = 300V, VGS = 10V, RGEN = 3.3Ω, ID = 60mA VR =300V, IF =0.06A, di/dt = 100A/µs 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMN60H080DS Document number: DS39475 Rev. 3 - 2 2 of 7 www.diodes.com May 2017 © Diodes Incorporated DMN60H080DS 0.100 ID, DRAIN CURRENT (A) 0.080 VDS = 10V ID, DRAIN CURRENT (A) 0.090 0.1 VGS = 3.5V VGS =4.0V VGS = 6.0V VGS = 8.0V VGS = 10.0V VGS = 3.3V 0.070 VGS = 4.50V VGS = 5.0V 0.060 VGS = 3.2V 0.050 0.040 0.030 0.020 TJ=150℃ 0.01 TJ=125℃ TJ=85℃ TJ=25℃ VGS = 3.0V TJ=-55℃ 0.010 VGS = 2.9V 0.001 0.000 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 1 20 100 90 80 70 VGS = 10V 60 50 3 4 5 6 7 8 9 VGS, GATE-SOURCE VOLTAGE (V) 10 200 180 160 140 120 100 ID = 60mA 80 60 40 40 0 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 220 VGS = 10V 200 180 TJ=150℃ 160 140 TJ=125℃ 120 100 TJ=85℃ 80 60 TJ=25℃ 40 20 TJ=-55℃ 0 0 0.02 0.04 0.06 0.08 0.1 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN60H080DS Document number: DS39475 Rev. 3 - 2 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) 20 Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 2 Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0 3 of 7 www.diodes.com 3 2.5 VGS = 10V, ID = 60mA 2 1.5 1 VGS = 4.5V, ID = 60mA 0.5 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Figure 6. On-Resistance Variation with Temperature May 2017 © Diodes Incorporated 200 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) DMN60H080DS 180 160 140 VGS = 4.5V, ID = 60mA 120 100 80 60 40 VGS = 10V, ID = 60mA 20 0 -50 -25 0 25 50 75 100 125 4 3.5 3 ID = 1mA 2.5 ID = 250μA 2 1.5 1 0.5 0 150 -50 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 0.1 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 100 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V IS, SOURCE CURRENT (A) -25 0.01 TJ = 85oC TJ = 125oC TJ = 25oC TJ= 150oC TJ = -55oC 0.001 Ciss 10 Coss Crss 1 0 0.3 0.6 0.9 1.2 1.5 0 VSD, SOURCE-DRAIN VOLTAGE (V) 20 40 60 80 100 120 140 160 180 200 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 10 1 RDS(ON) Limited 6 ID, DRAIN CURRENT (A) VGS (V) 8 VDS = 300V, ID = 10mA 4 2 0 0.1 PW =1ms PW =10ms PW =100ms 0.01 0.001 TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= 10V 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Qg (nC) 2 Document number: DS39475 Rev. 3 - 2 1 PW =1s PW =10s DC 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 1000 Figure 12. SOA, Safe Operation Area Figure 11. Gate Charge DMN60H080DS PW =100µs 4 of 7 www.diodes.com May 2017 © Diodes Incorporated DMN60H080DS 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 D=0.005 D=Single Pulse RθJA(t) = r(t) * RθJA RθJA = 174℃/W Duty Cycle, D = t1 / t2 0.001 1E-05 DMN60H080DS Document number: DS39475 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 May 2017 © Diodes Incorporated DMN60H080DS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm G Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y Dimensions C X X1 Y Y1 C Y1 X DMN60H080DS Document number: DS39475 Rev. 3 - 2 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com May 2017 © Diodes Incorporated DMN60H080DS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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