NDF04N62Z, NDP04N62Z, NDD04N62Z N-Channel Power MOSFET 620 V, 1.8 W Features • • • • http://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant VDSS RDS(ON) (TYP) @ 2 A 620 V 1.8 Ω ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol NDF NDP NDD 620 Unit N−Channel V D (2) Drain−to−Source Voltage VDSS Continuous Drain Current RqJC ID 4.4 (Note 2) 4.4 4.1 A Continuous Drain Current RqJC, TA = 100°C ID 2.8 (Note 2) 2.8 2.6 A G (1) Pulsed Drain Current, VGS @ 10V IDM 18 (Note 2) 18 16 A Power Dissipation RqJC (Note 1) PD 28 96 83 W Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, ID = 4.0 A EAS 120 mJ ESD (HBM) (JESD22−A114) Vesd 3000 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) VISO Peak Diode Recovery dv/dt 4.5 (Note 3) V/ns IS 4.0 A TL TPKG 300 260 °C TJ, Tstg −55 to 150 °C Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range 4500 − − S (3) 4 V 4 1 2 1 1 3 2 2 3 3 3 DPAK TO−220FP TO−220AB IPAK CASE 221D CASE 221A CASE 369D CASE 369AA STYLE 2 STYLE 1 STYLE 5 STYLE 2 1 2 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Limited by maximum junction temperature 3. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 1 1 Publication Order Number: NDF04N62Z/D NDF04N62Z, NDP04N62Z, NDD04N62Z THERMAL RESISTANCE Parameter Symbol Value Unit NDP04N62Z NDF04N62Z NDD04N62Z RqJC 1.3 4.4 1.5 °C/W (Note 4) NDP04N62Z (Note 4) NDF04N62Z (Note 1) NDD04N62Z (Note 4) NDD04N62Z−1 RqJA 50 50 38 80 Junction−to−Case (Drain) Junction−to−Ambient Steady State ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min VGS = 0 V, ID = 1 mA BVDSS 620 Reference to 25°C, ID = 1 mA DBVDSS/ DTJ Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current 25°C VDS = 620 V, VGS = 0 V Gate−to−Source Forward Leakage V 0.6 IDSS V/°C 1 125°C mA 50 VGS = ±20 V IGSS Static Drain−to−Source On−Resistance VGS = 10 V, ID = 2.0 A RDS(on) Gate Threshold Voltage VDS = VGS, ID = 50 mA VGS(th) Forward Transconductance VDS = 15 V, ID = 2.0 A gFS 3.3 S Ciss 535 pF ±10 mA 2.0 W 4.5 V ON CHARACTERISTICS (Note 5) 1.8 3.0 DYNAMIC CHARACTERISTICS Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Output Capacitance Coss 62 Reverse Transfer Capacitance Crss 14 Total Gate Charge Qg 19 Qgs 3.9 Qgd 10 Plateau Voltage VGP 6.4 V Gate Resistance Rg 4.7 W td(on) 12 ns tr 13 td(off) 25 tf 14 Gate−to−Source Charge VDD = 310 V, ID = 4.0 A, VGS = 10 V Gate−to−Drain (“Miller”) Charge nC RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time VDD = 310 V, ID = 4.0 A, VGS = 10 V, RG = 5 Ω Fall Time SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage IS = 4.0 A, VGS = 0 V VSD Reverse Recovery Time VGS = 0 V, VDD = 30 V IS = 4.0 A, di/dt = 100 A/ms trr 285 ns Qrr 1.3 mC Reverse Recovery Charge 4. Insertion mounted 5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 1.6 V NDF04N62Z, NDP04N62Z, NDD04N62Z TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 8 15 V TJ = 25°C 6 10 V 7V VDS ≥ 30 V ID, DRAIN CURRENT (A) 8 6.8 V 6.6 V 4 6.4 V 6.2 V 6.0 V 2 6 4 TJ = 150°C TJ = 25°C 2 5.8 V 5.6 V 0 5 10 15 20 0 25 4 5 7 6 8 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 2 A TJ = 25°C 3 2.5 2 1.5 5 6 7 8 9 10 VGS (V) 3 TJ = 25°C 2.5 2 VGS = 10 V 1.5 1 0.5 1 1.5 2 2.5 3 3.5 4 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.6 1.15 ID = 2 A VGS = 10 V ID = 1 mA BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.5 1 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 2 1.4 0.8 0.2 −50 −25 0 25 50 75 100 125 150 1.1 1.05 1.0 0.95 0.9 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature Figure 6. BVDSS Variation with Temperature http://onsemi.com 3 150 NDF04N62Z, NDP04N62Z, NDD04N62Z TYPICAL CHARACTERISTICS 1200 10,000 VGS = 0 V VGS = 0 V TJ = 25°C TJ = 150°C C, CAPACITANCE (pF) IDSS, LEAKAGE (nA) 1000 1000 TJ = 100°C 100 800 Ciss 600 400 Coss 200 10 0 100 200 300 500 400 150 Figure 8. Capacitance Variation VDD = 310 V ID = 4 A VGS = 10 V 300 100 t, TIME (ns) VDS 200 Qgs Qgd VGS 5 VDS = 310 V TJ = 25°C ID = 4 A 2 4 6 8 12 10 14 16 18 200 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QT 10 td(off) tr tf td(on) 10 100 0 20 1 1 10 100 Qg, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (W) Figure 9. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 10. Resistive Switching Time Variation vs. Gate Resistance 4 100 VGS = 0 V TJ = 25°C ID, DRAIN CURRENT (A) IS, SOURCE CURRENT (A) 100 Figure 7. Drain−to−Source Leakage Current vs. Voltage 400 0 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 15 0 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 VGS, GATE−TO−SOURCE VOLTAGE (V) 0 600 Crss 3 2 1 0 0.4 0.5 0.6 0.7 0.8 0.9 10 1 ms 100 ms 10 ms dc 1 VGS ≤ 30 V Single Pulse TC = 25°C 0.1 0.01 1.0 10 ms RDS(on) Limit Thermal Limit Package Limit 1 10 100 1000 VSD, SOURCE−TO−DRAIN VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Diode Forward Voltage vs. Current Figure 12. Maximum Rated Forward Biased Safe Operating Area for NDF04N62Z http://onsemi.com 4 NDF04N62Z, NDP04N62Z, NDD04N62Z TYPICAL CHARACTERISTICS 10 R(t) (C/W) 1.0 0.1 0.01 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0% SINGLE PULSE RqJC = 4.4°C/W Steady State 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 PULSE TIME (s) Figure 13. Thermal Impedance for NDF04N62Z LEADS HEATSINK 0.110″ MIN Figure 14. Isolation Test Diagram Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 100 1000 NDF04N62Z, NDP04N62Z, NDD04N62Z ORDERING INFORMATION Package Shipping† NDF04N62ZG TO−220FP (Pb−Free) 50 Units / Rail NDP04N62ZG TO−220AB (Pb−Free) 50 Units / Rail (In Development) NDD04N62Z−1G IPAK (Pb−Free) 75 Units / Rail (In Development) NDD04N62ZT4G DPAK (Pb−Free) 2500 / Tape & Reel (In Development) Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAMS NDF04N62ZG or NDP04N62ZG AYWW Gate Source 1 2 3 Gate Drain Source Drain A Y WW G = Location Code = Year = Work Week = Pb−Free Package http://onsemi.com 6 4 Drain YWW 4N 62ZG YWW 4N 62ZG 4 Drain 2 1 Drain 3 Gate Source NDF04N62Z, NDP04N62Z, NDD04N62Z PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− −B− F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. S Q A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B TO−220AB CASE 221A−09 ISSUE AE −T− B F T SEATING PLANE C S A U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z 4 Q MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE Y M INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 DIM A B C D F G H J K L N Q R S U U J G D INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. N http://onsemi.com 7 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 NDF04N62Z, NDP04N62Z, NDD04N62Z PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T http://onsemi.com 8 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− NDF04N62Z, NDP04N62Z, NDD04N62Z PACKAGE DIMENSIONS DPAK CASE 369AA−01 ISSUE A −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F H J L R S U V Z H 3 U F J L D M MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 −−− 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 2 PL 0.13 (0.005) INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 −−− 0.035 0.050 0.155 −−− T SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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