AP4924GM RoHS-compliant Product Advanced Power Electronics Corp. Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 ▼ Low On-resistance ▼ Fast Switching D2 D1 D1 BVDSS 20V RDS(ON) 35mΩ ID 6A G2 S2 SO-8 S1 G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G2 G1 S1 S2 The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V +12 V 3 6 A 3 4.8 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 35 A PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter Value Unit Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 1 200904031 AP4924GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance VGS=0V, ID=250uA 2 Min. Typ. Max. Units 20 - - V VGS=4.5V, ID=6A - - 35 mΩ VGS=2.5V, ID=5.2A - - 50 mΩ 0.5 - 1.2 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=6A - 18.5 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=16V, VGS=0V - - 250 uA Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA ID=6A - 9 - nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=10V - 1.8 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.2 - nC VDS=10V - 6.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 14 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=4.5V - 20 - ns tf Fall Time RD=10Ω - 15 - ns Ciss Input Capacitance VGS=0V - 300 - pF Coss Output Capacitance VDS=8V - 255 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) 2 Forward On Voltage Test Conditions Min. Typ. Max. Units VD=VG=0V , VS=1.2V - - 1.67 A Tj=25℃, IS=1.7A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRI HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4924GM 25 25 o T C =25 C 20 2.5V 15 10 V GS =2.0V 5 2.5V 15 10 V GS =2.0V 5 0 0 0 1 2 3 4 5 6 0 V DS , Drain-to-Source Voltage (V) 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 45 I D =6A T C =25 ℃ I D =6A V GS =4.5V 1.6 Normalized RDS(ON) 40 RDS(ON) (mΩ ) 4.5V 3.5V 3.0V 20 ID , Drain Current (A) ID , Drain Current (A) T C =150 o C 4.5V 3.5V 3.0V 35 30 1.4 1.2 1.0 25 0.8 0.6 20 2 3 4 V GS (V) Fig 3. On-Resistance v.s. Gate Voltage 5 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 AP4924GM 3 8 7 6 ID , Drain Current (A) 2 PD (W) 5 4 3 1 2 1 0 0 25 50 75 100 125 0 150 50 100 150 T c ,Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Normalized Thermal Response (Rthja) Duty Factor = 0.5 10 1ms ID (A) 10ms 1 100ms 0.1 0.1 0.05 0.02 0.01 P DM 0.01 1s 0.1 10s DC T C =25 o C Single Pulse 0.2 t T Single Pulse Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 4 AP4924GM I D =6A V DS =10V 5 Ciss 4 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 1000 6 3 Coss 100 Crss 2 1 0 10 0 2 4 6 8 10 12 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 1.5 100.00 10.00 1 T j =25 o C VGS(th) (V) IS(A) T j =150 o C 1.00 0.5 0.10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 -50 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 0 50 100 150 T j ,Junction Temperature ( o C) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 5 AP4924GM VDS 90% RD VDS D 0.5x RATED VDS G RG TO THE OSCILLOSCOPE 10% S + VGS VGS 4..5V - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS D 4.5V 0.5 x RATED VDS G S QG TO THE OSCILLOSCOPE QGS QGD VGS + 1~ 3 mA I G I D Charge Fig 15. Gate Charge Circuit Q Fig 16. Gate Charge Waveform 6