APT30GS60BRDL(G) 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT® TO The Thunderbolt HS™ IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. -24 An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DL series diode. Features Single die IGBT with separate DL 7 G C C E G E Typical Applications • Fast Switching with low EMI • Tight parameter distribution • ZVS Phase Shifted Bridge • Very Low EOFF for Maximum Efficiency • Easy paralleling • Resonant Mode Switching • Short circuit rated • Low Forward Diode Voltage (VF) • Phase Shifted Bridge • Low Gate Charge • Ultrasoft Recovery Diode • Welding • RoHS Compliant • Induction heating • High Frequency SMPS Absolute Maximum Ratings Symbol Parameter Rating I C1 Continuous Collector Current TC = @ 25°C 54 I C2 Continuous Collector Current TC = @ 100°C 30 I CM Pulsed Collector Current 1 113 VGE Gate-Emitter Voltage Unit A ±30V SSOA Switching Safe Operating Area 113 tSC Short Circut Withstand Time 3 10 V µs Thermal and Mechanical Characteristics Total Power Dissipation TC = @ 25°C RθJC Junction to Case Thermal Resistance RθCS Case to Sink Thermal Resistance, Flat Greased Surface TJ, TSTG Parameter IGBT WT Package Weight Max Unit - - 250 W - - 0.50 1.0 °C/W - 0.11 - -55 - 150 - - 300 - 0.22 - oz - 5.9 - g °C CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website - http://www.microsemi.com 052-6353 Rev B Soldering Temperature for 10 Seconds (1.6mm from case) Typ Diode Operating and Storage Junction Temperature Range TL Min 11-2008 Symbol PD Static Characteristics Symbol VBR(CES) ΔVBR(CES)/ΔTJ Parameter Collector-Emitter Breakdown Voltage Breakdown Voltage Temperature Coeff VCE(ON) Collector-Emitter On Voltage 4 VGE(th) Gate-Emitter Threshold Voltage ΔVGE(th)/ΔTJ Threshold Voltage Temp Coeff ICES Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Dynamic Characteristics Symbol gfs Min Typ Max Unit 600 - - V Reference to 25°C, IC = 250µA - 0.60 - V/°C VGE = 15V IC = 30A TJ = 25°C - 2.8 3.15 TJ = 125°C - 3.25 - 3 4 5 VGE = VCE, IC = 1mA VCE = 600V, VGE = 0V - 6.7 - - - 50 TJ = 125°C - - 1000 - - ±100 nA Min Typ Max Unit - 18 - S - 1600 - - 140 - VGE = ±20V Test Conditions VCE = 50V, IC = 30A Forward Transconductance Output Capacitance Cres Reverse Transfer Capacitance - 90 - Co(cr) Reverse Transfer Capacitance Charge Related 5 - 130 - Co(er) Reverse Transfer Capacitance Current Related 6 Gate-Emitter Charge Gate-Collector Charge td(on) Turn-On Delay Time tf VGE = 0V, VCE = 25V f = 1MHz Rise Time Inductive Switching IGBT and Diode: Turn-Off Delay Time Fall Time Turn-On Switching Energy 8 Eon2 Turn-On Switching Energy 9 Eoff Turn-Off Switching Energy 10 td(on) Turn-On Delay Time td(off) tf VGE = 0V VCE = 0 to 400V VGE = 0 to 15V IC = 30A, VCE = 300V Eon1 tr µA pF Total Gate Charge Ggc mV/°C TJ = 25°C unless otherwise specified Parameter Qge V TJ = 25°C Input Capacitance td(off) 11-2008 Test Conditions VGE = 0V, IC = 250µA Coes tr Rev B APT30GS60BRDL(G) Cies Qg 052-6353 TJ = 25°C unless otherwise specified Rise Time Turn-Off Delay Time Fall Time Eon1 Turn-On Switching Energy 8 Eon2 Turn-On Switching Energy 9 Eoff Turn-Off Switching Energy 10 TJ = 25°C, VCC = 400V, IC = 30A RG = 9.1Ω 7, VGG = 15V 95 - 145 - - 12 - - 65 - - 16 - - 29 - - 360 - - 27 - - TBD - - 800 - - 570 - - 16 - Inductive Switching IGBT and Diode: - 29 - - 390 - TJ = 125°C, VCC = 400V, IC = 30A RG = 9.1Ω 7, VGG = 15V - 22 - - TBD - - 1185 - - 695 - nC ns µJ ns µJ TYPICAL PERFORMANCE CURVES APT30GS60BRDL(G) 120 120 T = 125°C J 100 80 TJ = 25°C 60 40 TJ = 125°C 20 IC, COLLECTOR CURRENT (A) VGE = 13 & 15V 12V 100 11V 80 10V 60 9V 40 8V 20 6V TJ = 150°C 0 0 1 2 3 4 5 6 7 8 VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V) 0 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 100 TJ = 125°C TJ = 25°C 80 TJ = -55°C 60 40 20 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) IC = 60A IC = 30A 3 IC = 15A 2 1 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 0 2000 0 100 200 300 400 500 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 7, Capacitance vs Collector-To-Emitter Voltage IC, DC COLLECTOR CURRENT(A) Coes Cres 10 50A IICC== 30A 3 IC = 25A I = 15A C 2 1 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 20 40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 6, Gate Charge 60 Cies P C, CAPACITANCE ( F) 100 4 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) FIGURE 5, On State Voltage vs Junction Temperature 1000 IC = 100A 16 4 0 5 FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage 5 VGE, GATE-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE IC = 60A 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 11-2008 0 6 Rev B IC, COLLECTOR CURRENT (A) 250µs PULSE TEST<0.5 % DUTY CYCLE FIGURE 2, Output Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics 120 052-6353 IC, COLLECTOR CURRENT (A) VGE = 15V TYPICAL PERFORMANCE CURVES APT30GS60BRDL(G) 500 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 25 20 VGE = 15V 15 10 5 VCE = 400V TJ = 25°C, TJ =125°C RG = 9.1Ω L = 100µH 0 VGE =15V,TJ=25°C 200 100 VCE = 400V RG = 9.1Ω L = 100µH 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 60 RG = 9.1Ω, L = 100µH, VCE = 400V 60 RG = 9.1Ω, L = 100µH, VCE = 400V 50 TJ = 25 or 125°C,VGE = 15V 50 tf, FALL TIME (ns) tr, RISE TIME (ns) VGE =15V,TJ=125°C 300 0 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 400 40 30 40 30 TJ = 125°C, VGE = 15V 20 20 TJ = 25°C, VGE = 15V 10 10 0 0 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1600 V = 400V CE V = +15V GE R = 9.1Ω EOFF, TURN OFF ENERGY LOSS (µJ) EON2, TURN ON ENERGY LOSS (µJ) 4000 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current G 3000 TJ = 125°C,VGE =15V 2000 1000 TJ = 25°C,VGE =15V 0 Eon2,60A Eoff,60A 2 Eon2,30A Eoff,30A Eoff,15A Eon2 15A , 0 0 1200 TJ = 125°C, VGE = 15V 1000 800 600 400 200 TJ = 25°C, VGE = 15V 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (mJ) SWITCHING ENERGY LOSSES (mJ) 11-2008 Rev B 052-6353 J 4 1 G 4 V = 400V CE V = +15V GE T = 125°C 3 1400 0 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 5 V = 400V CE V = +15V GE R = 9.1Ω V = 400V CE V = +15V GE R = 9.1Ω G 3 Eon2,60A 2 Eoff,60A Eon2,30A 1 Eoff,30A Eon2,15A 0 Eoff,15A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES APT30GS60BRDL(G) 200 200 100 100 10 VCE(on) 13µs 100µs 1ms 1 10ms 100ms DC line 0.1 ICM IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) ICM TJ = 125°C TC = 75°C 10 VCE(on) 13µs 100µs 1ms 10ms 100ms TJ = 150°C TC = 25°C 1 DC line Scaling for Different Case & Junction Temperatures: IC = IC(T = 25°C)*(TJ - TC)/125 C 0.1 1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 17, Forward Safe Operating Area 1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 18, Maximum Forward Safe Operating Area 0.50 0.9 0.40 0.7 0.30 0.5 0.20 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.60 0.3 t1 t2 0.10 SINGLE PULSE 0.1 0.05 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.209 0.00245 0.00548 0.165 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 20, Transient Thermal Impedance Model T = 100°C C 10 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 9.1Ω G 1 F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC 0 10 20 30 40 50 IC, COLLECTOR CURRENT (A) Figure 21, Operating Frequency vs Collector Current 11-2008 0.207 C Rev B 0.0838 Dissipated Power (Watts) T = 75°C 052-6353 TC (°C) ZEXT TJ (°C) FMAX, OPERATING FREQUENCY (kHz) 120 APT30GS60BRDL(G) 10% Gate Voltage APT30DL60 TJ = 125°C td(on) Collector Current IC V CC 90% V CE tr 5% 5% 10% Collector Voltage Switching Energy A D.U.T. Figure 23, Turn-on Switching Waveforms and Definitions Figure 22, Inductive Switching Test Circuit Gate Voltage TJ = 125°C 90% td(off) Collector Voltage 90% tf 10% 0 Collector Current Switching Energy Figure 24, Turn-off Switching Waveforms and Definitions FOOT NOTE: 052-6353 Rev B 11-2008 1 3 4 5 6 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Short circuit time: VGE = 15V, VCC ≤ 600V, TJ ≤ 150°C Pulse test: Pulse width < 380µs, duty cycle < 2% Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES. Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of VCE less than V(BR)CES, use this equation: Co(er) = -1.40E-7/VDS^2 + 1.47E-8/VDS + 5.95E-11. 7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452). 8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode. 9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy. 10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. DYNAMIC CHARACTERISTICS APT30GS60BRDL(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM APT30GS60BRDL(G) Characteristic / Test Conditions Maximum Average Forward Current (TC = 126°C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 51 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) UNIT Amps 320 STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions MIN Forward Voltage TYP MAX IF = 30A 1.25 1.6 IF = 60A 2.0 IF = 30A, TJ = 125°C UNIT Volts 1.25 DYNAMIC CHARACTERISTICS Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C F F R J - 64 trr Reverse Recovery Time - 317 Qrr Reverse Recovery Charge - 962 - 7 - 561 ns - 2244 nC - 9 - 264 ns - 3191 nC - 26 Amps Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A, diF/dt = -1000A/μs VR = 400V, TC = 125°C Maximum Reverse Recovery Current - - Amps Amps 1.2 1 0.8 0.6 Note: 0.4 PDM t2 0.2 0 t1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-5 10-4 1.0 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ (°C) TC (°C) .112 .437 .450 .0005 .0016 0.263 Dissipated Power (Watts) ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 11-2008 ZθJC, THERMAL IMPEDANCE (°C/W) IRRM IF =30A, diF/dt = -200A/μs nC Rev B IRRM VR = 400V, TC = 25°C ZEXT IRRM IF = 30A, diF/dt = -200A/μs ns 052-6353 Symbol TYPICAL PERFORMANCE CURVES 800 100 TJ= 125°C TJ= 150°C TJ= 55°C 70 60 TJ= 25°C 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 4500 T = 125°C 60A J V = 400V R 4000 3500 30A 3000 2500 15A 2000 1500 1000 500 0 CJ, JUNCTION CAPACITANCE (pF) 11-2008 100 T = 125°C J V = 400V 28 60A R 30A 24 15A 20 16 12 8 4 0 40 tRR 0.6 QRR 30 0.4 20 0.2 10 Duty cycle = 0.5 TJ = 126°C 0 25 50 75 100 125 150 300 Rev B 200 50 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 052-6353 300 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 60 IRRM 0.8 250 200 150 100 50 0 15A 400 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 32 1 0 30A 500 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 R 60A 600 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 80 T = 125°C J V = 400V 700 trr, COLLECTOR CURRENT (A) 90 Qrr, REVERSE RECOVERY CHARGE (nC) APT30GS60BRDL(G) 1 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature Vr diF /dt Adjust +18V 0V D.U.T. trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 1 4 6 Zero 5 3 2 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 0.25 IRRM Slope = diM/dt Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 (B) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Collector (Cathode) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 1.65 (.065) 2.13 (.084) Gate Collector (Cathode) Emitter (Anode) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. 11-2008 1.01 (.040) 1.40 (.055) Rev B 19.81 (.780) 20.32 (.800) 052-6353 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123)