AP4409GEP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
G
▼ Fast Switching Characteristic
BVDSS
-35V
RDS(ON)
8.2mΩ
ID
-80A
▼ RoHS Compliant & Halogen-Free
S
Description
AP4409 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
G
TO-220(P)
D
S
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
-35
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
-80
A
ID@TC=100℃
Drain Current, VGS @ 10V
-50
A
-280
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
83.3
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance Junction-case
1.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201501132
AP4409GEP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-35
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-40A
-
-
8.2
mΩ
VGS=-4.5V, ID=-30A
-
-
12.5
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
VDS=-10V, ID=-40A
-
65
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=-28V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=-40A
-
58
93
nC
Qgs
Gate-Source Charge
VDS=-28V
-
12
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
33
-
nC
td(on)
Turn-on Delay Time
VDS=-18V
-
13
-
ns
tr
Rise Time
ID=-40A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
92
-
ns
tf
Fall Time
VGS=-10V
-
147
-
ns
Ciss
Input Capacitance
VGS=0V
-
5600 8960
pF
Coss
Output Capacitance
VDS=-25V
-
750
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
550
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3
6
Ω
Min.
Typ.
IS=-30A, VGS=0V
-
-
-1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
46
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
58
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4409GEP-HF
280
240
T C = 25 o C
200
160
200
-ID , Drain Current (A)
-ID , Drain Current (A)
240
-10V
-7.0V
-6.0V
-5.0V
o
T C = 150 C
-10V
-7.0 V
-6.0 V
-5.0 V
V G = - 4.0 V
120
80
160
V G = - 4.0 V
120
80
40
40
0
0
0
4
8
12
16
20
0
4
-V DS , Drain-to-Source Voltage (V)
8
12
16
20
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
2.0
I D = -30 A
T C =25 ℃
I D = -40A
V G = -10V
1.8
.
8
Normalized RDS(ON)
RDS(ON) (mΩ )
1.6
10
1.4
1.2
1.0
0.8
0.6
0.4
6
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
2
I D = -1mA
Normalized VGS(th)
1.6
-IS(A)
20
T j =25 o C
o
T j =150 C
1.2
0.8
10
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4409GEP-HF
10
f=1.0MHz
7000
C iss
V DS = -28V
I D = -40A
5000
C (pF)
-VGS , Gate to Source Voltage (V)
6000
8
6
4000
3000
4
2000
2
C oss
C rss
1000
0
0
0
20
40
60
80
100
1
120
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Operation in this area
limited by RDS(ON)
-ID (A)
100
100us
.
1ms
10
10ms
100m
DC
o
T C =25 C
Single Pulse
Normalized Thermal Response (R thjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
1
0.1
1
10
0.00001
100
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
90
100
V DS =-5V
T j =25 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
80
o
T j =150 C
60
40
60
30
20
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T C , Case Temperature ( o C )
Fig 12. Drain Current v.s. Case Temperature
4
AP4409GEP-HF
MARKING INFORMATION
4409GEP
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5