MMSD4148, SMMSD4148 Switching Diode Features • • • • • SOD−123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com SOD−123 CASE 425 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Continuous Reverse Voltage VR 100 V Forward Current IF 200 mA IFSM 1.0 2.0 A IFRM 0.5 A TJ, Tstg −55 to +150 °C Forward Surge Current (Note 1) t < 1 sec t = 1 msec Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) Operating and Storage Junction Temperature Range Unit 1 CATHODE MARKING DIAGRAM 5I M G G 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Typical Values 5I M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C PD 425 mW 3.4 mW/°C 290 °C/W Thermal Resistance Junction−to−Ambient 2 ANODE ORDERING INFORMATION Package Shipping† MMSD4148T1G SOD−123 (Pb−Free) 3,000 / Tape & Reel SMMSD4148T1G* SOD−123 (Pb−Free) 3,000 / Tape & Reel MMSD4148T3G SOD−123 (Pb−Free) 10,000 / Tape & Reel SMMSD4148T3G* SOD−123 (Pb−Free) 10,000 / Tape & Reel Device RqJA 2. FR−5 = 1.0 oz Cu, 1.0 inz pad †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 13 1 Publication Order Number: MMSD4148T1/D MMSD4148, SMMSD4148 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 100 − − − 25 5.0 − 1000 − 4.0 − 4.0 Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 mA) V(BR) Reverse Voltage Leakage Current (VR = 20 V) (VR = 75 V) IR Forward Voltage (IF = 10 mA) VF Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD Reverse Recovery Time (IF = IR = 10 mA) (Figure 1) trr V nA mA mV pF ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 W +10 V 2k 100 mH 0.1 mF tr IF tp 0.1 mF t IF trr 10% t DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) MMSD4148, SMMSD4148 IF, FORWARD CURRENT (mA) 100 10 TA = 85°C TA = -40°C 1.0 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 40 50 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 10 I R, REVERSE CURRENT (A) μ TA = 150°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current CD , DIODE CAPACITANCE (pF) 0.68 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance www.onsemi.com 3 8 MMSD4148, SMMSD4148 PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G D A ÂÂÂÂ ÂÂÂÂ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 1 HE DIM A A1 b c D E HE L q E 2 MILLIMETERS NOM MAX 1.17 1.35 0.05 0.10 0.61 0.71 --0.15 1.60 1.80 2.69 2.84 3.68 3.86 ------10 ° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° STYLE 1: PIN 1. CATHODE 2. ANODE q L b MIN 0.94 0.00 0.51 --1.40 2.54 3.56 0.25 0° C SOLDERING FOOTPRINT* ÉÉ ÉÉ ÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉ ÉÉ ÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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