CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MEP4435Q8 BVDSS -30V ID RDSON(MAX)@VGS=-10V, ID=-10A -13A 9.3mΩ(typ.) RDSON(MAX)@VGS=-5V, ID=-7A 14mΩ(typ.) RDSON(MAX)@VGS=-4.5V, ID=-5A 15mΩ(typ.) Description The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit MEP4435Q8 Outline SOP-8 G：Gate S：Source D：Drain MEP4435Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=100°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=-13A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TA=25℃ Total Power Dissipation TA=100℃ Operating Junction and Storage Temperature Range Symbol Limits Unit VDS VGS -30 ±25 -13 -8.2 -50 *1 -13 8.5 2.5 *2 2.5 *3 1 *3 -55~+150 V V A A A A mJ mJ W W °C ID IDM IAS EAS EAR PD Tj, Tstg Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 20 50 *3 Unit °C/W °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS IDSS Min. Typ. Max. Unit -3 ±100 -1 -10 12 20 21 - V V nA μA μA - RDS(ON) *1 -30 -1 - GFS Dynamic Ciss Coss Crss *1 - -1.5 9.3 14 15 20 - 2994 323 258 MEP4435Q8 Test Conditions S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±25V, VDS=0 VDS=-24V, VGS=0 VDS=-24V, VGS=0, Tj=125°C VGS=-10V, ID=-13A VGS=-5V, ID=-7A VGS=-4.5V, ID=-5A VDS=-5V, ID=-10A pF VDS=-15V, VGS=0, f=1MHz mΩ CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2 Qgs *1, 2 Qgd *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. - Typ. 14 10 44 15 35 18 12 13 4 Max. - - 40 28 -3 -12 -1.2 - Unit Test Conditions ns VDD=-15V, ID=-1A, VGS=-10V, RG=2.7Ω nC VDS=-15V, ID=-10A, VGS=-10V, Ω VGS=15mV, VDS=0, f=1MHz A V ns nC IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MEP4435Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MEP4435Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 40 100 -BVDSS, Drain-Source Breakdown Voltage(V) -10V, -9V, -8V, -7V,-6V,-5V -ID, Drain Current (A) 80 VGS=-4V 60 40 20 VGS=-3V 35 30 ID=-250μA, VGS=0V 25 0 0 1 -60 5 2 3 4 -VDS, Drain-Source Voltage(V) -20 Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=0V -VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) 180 Source Drain Current vs Source-Drain Voltage 1000 VGS=-2.5V 100 VGS=-4.5V 10 VGS=-10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.01 0.1 1 -ID, Drain Current(A) 0 10 8 12 16 -IS, Source Drain Current(A) 20 20 R DS(on) , Static Drain-Source On-State Resistance(mΩ) 200 180 160 140 120 100 80 ID=-10A 60 40 20 16 VGS=-10V, ID=-10A 12 8 4 0 0 0 MEP4435Q8 4 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on) , Static Drain-Source OnState Resistance(mΩ) 20 60 100 140 Tj, Junction Temperature(°C) 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2 -VGS(th) , Threshold Voltage(V) 10000 Capacitance---(pF) Ciss 1000 C oss 1.8 1.6 ID=-1mA 1.4 1.2 ID=-250μA 1 Crss 0.8 100 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 Gate Charge Characteristics VDS=-15V -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 60 10 100 10 1 VDS=-5V Pulsed TA=25°C 0.1 8 VDS=-10V VDS=-5V 6 4 2 ID=-10A 0 0.01 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 8 16 24 32 Qg, Total Gate Charge(nC) 40 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 16 100 -ID, Maximum Drain Current(A) 10μs -ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 100μs 10 1ms 10ms 100ms 1 DC 0.1 TA=25°C, Tj=150°C, VGS=-10V θJA=50°C/W, Single Pulse 14 12 10 8 6 4 TA=25°C, VGS=-10V 2 0 0.01 0.1 MEP4435Q8 1 10 -ID, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 50 TJ(MAX) =150°C TA=25°C θJA=50°C/W Power (W) 40 30 20 10 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) Recommended Soldering Footprint MEP4435Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MEP4435Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MEP4435Q8 CYStek Product Specification Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : 2014.03.05 Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name Year Code : Last digit of Christian year Month Code : A, B, C, D, E, F, G, H, J, K, L, and M represent Jan thru Dec Production Lot Serial number: Rolling from 01 each month 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 *: Typical Inches Min. Max. 0.1850 0.2007 0.1496 0.1575 0.2283 0.2441 0.0500* 0.0130 0.0201 0.1472 0.1527 DIM A B C D E F Millimeters Min. Max. 4.70 5.10 3.80 4.00 5.80 6.20 1.27 * 0.33 0.51 3.74 3.88 DIM G H I J K L Inches Min. Max. 0.0531 0.0689 0.1889 0.2007 0.0019 0.0098 0.0157 0.0500 0.0067 0.0098 0.0531 0.0610 Millimeters Min. Max. 1.35 1.75 4.80 5.10 0.05 0.25 0.40 1.27 0.17 0.25 1.35 1.55 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MEP4435Q8 CYStek Product Specification