PHILIPS BLU11 Uhf power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLU11/SL
UHF power transistor
Product specification
July 1986
Philips Semiconductors
Product specification
UHF power transistor
BLU11/SL
DESCRIPTION
FEATURES
N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile transmitters in the 470 MHz
band.
• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile.
• gold metallization ensures
excellent reliability.
• the device can be applied at a PL of
max. 1,5 W when it is mounted on a
printed wiring board (see Fig.6)
without an external heatsink.
The transistor has a 4-lead envelope
with a ceramic cap (SOT-122D). All
leads are isolated from the mounting
base.
QUICK REFERENCE DATA
R.F. performance in a common-emitter class-B circuit.
MODE OF OPERATION
T
°C
Tmb = 25
narrow band; c.w.
Ta =
25(1)
VCE
V
f
MHz
PL
W
Gp
dB
ηC
%
12,5
470
2,5
> 10
> 55
12,5
470
1,5
> 12
> 55
Note
1. Device mounted on a printed wiring board (see Fig.6).
PIN CONFIGURATION
PINNING - SOT122D.
PIN
handbook, halfpage
4
1
3
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
MSB055
Fig.1 Simplified outline. SOT122D.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
July 1986
2
Philips Semiconductors
Product specification
UHF power transistor
BLU11/SL
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
VCBO
max.
36 V
Collector-emitter voltage (open base)
VCEO
max.
16 V
Emitter-base voltage (open collector)
VEBO
max.
3 V
d.c. or average
IC; IC(AV)
max.
0,4 A
(peak value), f > 1 MHz
ICM
max.
1,2 A
Ptot(rf)
max.
6 W
Collector current
Total power dissipation
at Tmb ≤ 90 °C; f > 1 MHz
Storage temperature
Tstg
Operating junction temperature
Tj
−65 to +150 °C
max.
200 °C
MDA306
10
handbook, halfpage
Ptot(rf)
(W)
II
8
I
6
4
2
0
0
40
80
120
160
Tmb (°C)
I Continuous r.f. operation (f > 1 MHz)
II Short-time r.f. operation during mismatch (f > 1 MHz)
Fig.2 Power/temperature derating curves.
THERMAL RESISTANCE
Dissipation = 4,5 W
From junction to ambient(1)
at Ta = 25 °C; f > 1 MHz (r.f. operation)
Rth j-a (rf)
max.
50 K/W
Rth j-mb (rf)
max.
15 K/W
From junction to mounting base
at Tmb = 25 °C; f > 1 MHz (r.f. operation)
Note
1. Device mounted on a printed wiring board (see Fig.6).
July 1986
3
Philips Semiconductors
Product specification
UHF power transistor
BLU11/SL
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-base breakdown voltage
open emitter; IC = 5 mA
V(BR)CBO
min.
36 V
V(BR)CEO
min.
16 V
V(BR)EBO
min.
3 V
ICES
max.
2,5 mA
ESBR
min.
0,55 mJ
hFE
min.
Cc
typ.
4 pF
Cre
typ.
2,5 pF
Cc-mb
typ.
1,2 pF
Collector-emitter breakdown voltage
open base; IC = 10 mA
Emitter-base breakdown voltage
open collector; IE = 0,5 mA
Collector cut-off current
VBE = 0; VCE = 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; RBE = 10 Ω
D.C. current gain
IC = 0,3 A; VCE = 10 V
25
Collector capacitance at f = 1 MHz
IE = ie = 0; VCB = 12,5 V
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 12,5 V
Collector-mounting base capacitance
MDA307
120
MDA308
10
Cc
handbook, halfpage
handbook, halfpage
(pF)
8
hFE
80
VCE =
12.5 V
6
10 V
4
40
2
0
0
0
400
800
IC (mA)
0
1200
Fig.3 Tj = 25 °C; typical values.
July 1986
4
8
12
16
20
VCB (V)
Fig.4 IE = ie = 0; f = 1 MHz; typical values.
4
Philips Semiconductors
Product specification
UHF power transistor
BLU11/SL
APPLICATION INFORMATION
R.F. performance in common-emitter circuit; class-B; f = 470 MHz; circuit tuned at PL = 2,5 W.
T
°C
VCE
V
f
MHz
PL
W
Tmb = 25
12,5
470
2,5
MODE OF OPERATION
narrow band; c.w.
Tmb = 25
Ta =
25(2)
12,5
470
1,5
L5
handbook, full pagewidth
C6
,,,,,,
,,,
,,,,,, ,,,
ηC
%
Gp
dB
> 10
> 55
typ. 12
typ. 60
> 12
> 55
+VCC
R2
C7
C5
L4
C3
C1
50 Ω
R1
L2
L1
C2
T.U.T.
L3
L6
C4
C9
50 Ω
C8
Fig.5 Class-B test circuit at f = 470 MHz.
MDA309
List of components:
C1 = C2 = 2-9 pF film dielectric trimmer (cat. no. 2222 809 09002)
C3 = 1,6 pF multilayer ceramic chip capacitor(1)
C4 = 10 pF multilayer ceramic chip capacitor(1)
C5 = 100 pF multilayer ceramic chip capacitor
C6 = 3 × 100 nF multilayer ceramic chip capacitor (cat. no. 2222 809 47104)
C7 = 2,2 µF (35 V) tantalum electrolytic capacitor
C8 = 1,4 - 55 pF film dielectric trimmer (cat. no. 2222 809 09001)
C9 = 5,6 pF multilayer ceramic chip capacitor(1)
L1 = 56 Ω stripline (25,5 mm × 2 mm)
L2 = L3 = 25 Ω stripline (11 mm × 6 mm)
L4 = 132 nH; 6 turns closely wound enamelled Cu-wire (1 mm), int. dia. 6 mm, leads 2 × 5 mm
L5 = Ferroxcube h.f. choke, grade 3B (cat. no. 4312 020 36642)
L6 = 16 nH; 1 turn enamelled Cu-wire (1 mm), int. dia. 6 mm, leads 2 × 5 mm
R1 = 10 Ω; ± 5% 0,4 W metal film resistor
R2 = 10 Ω; ± 5% 0,4 W metal film resistor
L1, L4 and L5 are striplines on a double Cu-clad printed wiring board with PTFE fibre-glass dielectric (εr = 2,2) and a
thickness 1⁄32 inch; thickness of copper-sheet 2 × 35 µm.
Notes
1. American Technical Ceramics capacitor type B or capacitor of the same quality.
2. Device mounted on a printed wiring board (see Fig.6).
July 1986
5
Philips Semiconductors
Product specification
UHF power transistor
BLU11/SL
108
handbook, full pagewidth
copper straps
70
M2
rivets
M3
+VCC
L5
R2
C7
C5
C6
L4
C1
C3
R1
L1
L2
L3
C9
L6
C4
C8
C2
MDA310
The circuit and the components are situated on one side of the P.T.F.E. fibre-glass board; the other side
is unetched copper serving as a groundplane. Earth connections are made by using hollow rivets,
fixing-screws and copper straps at the input and output and under the two emitters to provide a direct
contact between the copper on the component side and the groundplane.
Dimensions in mm.
Fig.6 Printed wiring board and component lay-out for 470 MHz class-B test circuit.
July 1986
6
Philips Semiconductors
Product specification
UHF power transistor
BLU11/SL
MDA311
4
MDA312
20
Gp
(dB)
handbook, halfpage
100
ηC
handbook, halfpage
PL
(W)
(%)
16
80
3
Gp
60
12
ηC
2
8
40
4
20
1
0
0
0
0.1
0.2
0.3
PS (W)
VCE = 12,5 V; f = 470 MHz; Tmb = 25 °C;
class-B operation; test circuit tuned at PL = 2,5 W;
typical values.
1.5
2
2.5
PL (W)
3
VCE = 12,5 V; f = 470 MHz; Tmb = 25 °C;
class-B operation; test circuit tuned at PL = 2,5 W;
typical values.
Fig.7 Load power versus source power.
Fig.8
RUGGEDNESS
The BLU11/SL is capable of withstanding a full load
mismatch (VSWR = 50 through all phases) at PL = 2,5 W
up to a supply voltage of 15,5 V at Tmb = 25 °C.
Input and output impedances (series components) versus
frequency:
VCE = 12,5 V; PL = 2,5 W; f = 400 to 512 MHz;
Tmb = 25 °C; class-B operation; typical values.
FREQUENCY (MHz)
Zi (Ω)
Zo (Ω)
400
4,0 − j 4,1
13,1 + j 7,2
430
4,0 − j 3,3
13,3 + j 7,0
460
4,0 − j 2,6
13,6 + j 6,9
490
4,1 − j 1,9
13,8 + j 6,8
512
4,1 − j 1,5
13,8 + j 6,7
July 1986
0
1
7
Power gain and efficiency versus load power.
Philips Semiconductors
Product specification
UHF power transistor
BLU11/SL
PACKAGE OUTLINE
Studless ceramic package; 4 leads
SOT122D
D
A
Q
c
D2
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D2
H
L
Q
α
mm
4.17
3.27
5.85
5.58
0.18
0.14
7.50
7.23
7.24
6.98
27.56
25.78
9.91
9.14
1.58
1.27
90°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-04-18
SOT122D
July 1986
EUROPEAN
PROJECTION
8
Philips Semiconductors
Product specification
UHF power transistor
BLU11/SL
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
July 1986
9