ES1A - ES1D ES1A - ES1D Features • For surface mount applications. • Glass passivated junction. • Low profile package. • Easy pick and place. • Built-in strain relief. • Superfast recovery times for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Parameter 1A 50 1B 100 1C 150 1.0 1D 200 Units VRRM IF(AV) Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA=120°C IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 30 A -50 to +150 °C Operating Junction Temperature -50 to +150 °C Tstg TJ V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 1.47 W RθJA Thermal Resistance, Junction to Ambient* 85 °C/W RθJL Thermal Resistance, Junction to Lead* 35 °C/W *Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol TA = 25°C unless otherwise noted Device Parameter 1A VF Forward Voltage @ 1.0 A trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Reverse Current @ rated VR IR CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 2001 Fairchild Semiconductor Corporation TA = 25°C TA = 100°C 1B 1C Units 1D 0.92 V 15 ns 5.0 100 µA µA pF 7.0 ES1A-ES1D, Rev. C ES1A - ES1D 10 1.5 1.25 Forward Current, IF [A] Average Rectified Forward Current, IF [A] Typical Characteristics 1 0.75 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS 0.5 0.25 0 0 25 50 75 100 125 Ambient Temperature [ºC] 150 0.01 TA = 25º C Pulse Width = 300µ µs 2% Duty Cycle 0.6 0.8 1 1.2 Forward Voltage, VF [V] 1.4 Figure 2. Forward Voltage Characteristics 1000 30 25 Reverse Current, IR [mA] Peak Forward Surge Current, IFSM [A] 0.1 0.001 0.4 175 Figure 1. Forward Current Derating Curve 1 20 15 10 5 0 1 2 5 10 20 Number of Cycles at 60Hz 50 100 Figure 3. Non-Repetitive Surge Current 100 T A = 125 º C 10 TA = 75º C 1 T A = 25º C 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Total Capacitance, C T [pF] 14 12 10 8 6 4 2 0 0.1 1 10 Reverse Voltage, V R [V] 100 Figure 5. Total Capacitance 50Ω NONINDUCTIVE 50Ω NONINDUCTIVE +0.5A trr (-) DUT 50V (approx) 50Ω NONINDUCTIVE Pulse Generator (Note 2) 0 -0.25A (+) OSCILLOSCOPE (Note 1) NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation ES1A-ES1D, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4