Z ibo Seno Electronic Engineering Co., Ltd. EGF1A – EGF1M 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features ! ! ! ! ! ! B Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss A Ultra-Fast Recovery Time F Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E SMA/DO-214AC Dim Min Max 2.50 2.90 A 4.00 4.60 B 1.20 1.60 C 0.152 0.305 D 4.80 5.28 E 2.00 2.44 F 0.051 0.203 G 0.76 1.52 H All Dimensions in mm Mechanical Data ! ! ! ! ! ! Case: SMA/DO-214AC, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.064 grams (approx.) Lead Free: For RoHS / Lead Free Version Maximum Ratings and Electrical Characteristics Symbol Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TA=25°C unless otherwise specified EGF1A EGF1B EGF1D EGF1G EGF1J EGF1K EGF1M Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 800 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM @TA = 25°C @TA = 100°C IRM Peak Reverse Current At Rated DC Blocking Voltage @TL = 100°C D 1.0 1.4 1.7 V 10 500 µA Reverse Recovery Time (Note 1) trr Typical Junction Capacitance (Note 2) Cj 15 pF RJL 30 °C/W Tj, TSTG -65 to +175 °C Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 50 75 nS Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. EGF1A – EGF1M 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 1.0 0.5 0 75 50 100 125 175 150 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) EGF1A – EGF1M 10 EGF1A – EGF1D EGF1G 1.0 EGF1J – EGF1M 0.1 0.01 IR, INSTANTANEOUS REVERSE CURRENT (mA) IFSM, PEAK FORWARD SURGE CURRENT (A) 40 Single Half Sine-Wave (JEDEC Method) 30 20 10 Tj = 150°C 1 10 0 0.4 0.8 1.2 1.6 2.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics TL , LEAD TEMPERATURE ( ° C) Fig. 1 Forward Current Derating Curve 0 Tj - 25°C Pulse Width = 300µs 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve 1000 100 Tj = 100°C 10 1.0 Tj = 25°C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr 50Ω NI (Non-inductive) (-) 10Ω NI Device Under Test (+) +0.5A (-) Pulse Generator (Note 2) 50V DC Approx 1.0Ω NI Oscilloscope (Note 1) 0A -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit EGF1A – EGF1M 2 of 2 www.senocn.com Alldatasheet