Diodes DCX122LH Complementary npn/pnp pre-biased small signal dual surface mount transistor Datasheet

DCX (LO-R1) H
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
NE W P RO DUC T
Features
•
•
•
•
Epitaxial Planar Die Construction
Built-In Biasing Resistors
Lead Free By Design/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
SOT-563
A
CXXYM
B C
Mechanical Data
•
•
•
•
•
•
Case: SOT-563
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
P/N
DCX122LH
DCX142JH
DCX122TH
DCX142TH
R1 (NOM)
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
R2 (NOM)
10KΩ
10KΩ
OPEN
OPEN
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.15
0.25
0.20
M
0.10
0.18
0.11
D
D
G
M
K
H
L
MARKING
C81
C82
C83
C84
Dim
0.50
All Dimensions in mm
R1 R
2
R1
R2 R1
R1
R1, R2
R1 Only
SCHEMATIC DIAGRAM, TOP VIEW
Maximum Ratings NPN Section
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Supply Voltage
Value
Unit
VCC
50
V
Input Voltage
DCX122LH
DCX142JH
VIN
-5 to +6
-5 to +6
V
Input Voltage
DCX122TH
DCX142TH
VEBO (MAX)
5
V
All
IC
100
mA
(Note 1, 2)
Pd
150
mW
RθJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
NPN Section, PNP Section, or maximum combined.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30429 Rev. 3 - 2
1 of 4
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DCX (LO-R1) H
© Diodes Incorporated
Maximum Ratings PNP Section
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
VCC
-50
V
NEW PRODUCT
Supply Voltage
Input Voltage
DCX122LH
DCX142JH
VIN
+5 to -6
+5 to -6
V
Input Voltage
DCX122TH
DCX142TH
VEBO (MAX)
-5
V
All
IC
-100
mA
(Note 1, 2)
Pd
150
mW
RθJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Electrical Characteristics NPN Section
Characteristic
Input Voltage
Symbol
Min
Typ
Max
Unit
Vl(off)
0.3
0.3
⎯
⎯
V
VCC = 5V, IO = 100μA
DCX122LH
DCX142JH
Vl(on)
⎯
⎯
2.0
2.0
V
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO(on)
⎯
⎯
0.3V
V
IO/Il = 5mA/0.25mA
Il
⎯
⎯
28
13
mA
VI = 5V
IO(off)
⎯
⎯
0.5
μA
VCC = 50V, VI = 0V
Gl
56
56
⎯
⎯
⎯
VO = 5V, IO = 10mA
fT
⎯
200
⎯
DCX122LH
DCX142JH
Output Current
DDCX122LH
DDCX142JH
DC Current Gain
R1, R2 Types
DCX122LH
DCX142JH
Output Voltage
Input Current
@TA = 25°C unless otherwise specified
Gain-Bandwidth Product*
Test Condition
MHz VCE = 10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section
Characteristic
@TA = 25°C unless otherwise specified
R1-Only
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
BVCBO
50
⎯
⎯
V
IC = 50μA
Collector-Emitter Breakdown Voltage
BVCEO
40
⎯
⎯
V
IC = 1mA
BVEBO
5
⎯
⎯
V
IE = 50μA
IE = 50μA
ICBO
⎯
⎯
0.5
μA
VCB = 50V
IEBO
⎯
⎯
⎯
0.5
0.5
μA
VEB = 4V
Emitter-Base Breakdown Voltage
DCX122TH
DCX142TH
Collector Cutoff Current
Emitter Cutoff Current
DCX122TH
DCX142TH
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
DCX122TH
DCX142TH
Test Condition
VCE(sat)
⎯
⎯
0.3
V
IC = 5mA, IB = 0.25mA
hFE
100
100
250
250
600
600
⎯
IC = 1mA, VCE = 5V
fT
⎯
200
⎯
MHz VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
DS30429 Rev. 3 - 2
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DCX (LO-R1) H
© Diodes Incorporated
Electrical Characteristics PNP Section
Characteristic
Symbol
Min
Typ
Max
Unit
Vl(off)
-0.3
-0.3
⎯
⎯
V
VCC = -5V, IO = -100μA
DCX122LH
DCX142JH
Vl(on)
⎯
⎯
-2.0
-2.0
V
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
VO(on)
⎯
⎯
-0.3V
V
IO/Il = -5mA/-0.25mA
Il
⎯
⎯
-28
-13
mA
VI = -5V
IO(off)
⎯
⎯
-0.5
μA
VCC = -50V, VI = 0V
Gl
56
56
⎯
⎯
⎯
VO = -5V, IO = -10mA
fT
⎯
200
⎯
DCX122LH
DCX142JH
Input Current
Output Current
DCX122LH
DCX142JH
DC Current Gain
R1, R2 Types
DCX122LH
DCX142JH
Output Voltage
Gain-Bandwidth Product*
Test Condition
MHz VCE = -10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics
R1-Only Types
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
Characteristic
BVCBO
-50
⎯
⎯
V
IC = -50μA
Collector-Emitter Breakdown Voltage
BVCEO
-40
⎯
⎯
V
IC = -1mA
BVEBO
-5
⎯
⎯
V
IE = -50μA
IE = -50μA
ICBO
⎯
⎯
-0.5
μA
VCB = -50V
IEBO
⎯
⎯
⎯
-0.5
-0.5
μA
VEB = -4V
VCE(sat)
⎯
⎯
-0.3
V
IC = -5mA, IB = -0.25mA
hFE
100
100
250
250
600
600
⎯
IC = -1mA, VCE = -5V
fT
⎯
200
⎯
Emitter-Base Breakdown Voltage
DCX122TH
DCX142TH
Collector Cutoff Current
DCX122TH
DCX142TH
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DCX122TH
DCX142TH
DC Current Transfer Ratio
Gain-Bandwidth Product*
Test Condition
MHz VCE = -10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
250
Pd, POWER DISSIPATION (mW)
NEW PRODUCT
Input Voltage
@TA = 25°C unless otherwise specified
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve - Total
DS30429 Rev. 3 - 2
3 of 4
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DCX (LO-R1) H
© Diodes Incorporated
NEW PRODUCT
Ordering Information (Note 6)
Notes:
Device
Packaging
Shipping
DCX122LH-7
SOT-563
3000/Tape & Reel
DCX142JH-7
SOT-563
3000/Tape & Reel
DCX122TH-7
SOT-563
3000/Tape & Reel
DCX142TH-7
SOT-563
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CXX = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
CXXYM
Date Code Key
Year
2002
2003
2004
2005
2006
Code
N
P
R
S
T
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
2007
U
Jun
6
2008
V
Jul
7
Aug
8
2009
W
Sep
9
2010
X
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30429 Rev. 3 - 2
4 of 4
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DCX (LO-R1) H
© Diodes Incorporated
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