<Se.mi-(2ondiicto^ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION • DC Current Gain -hFe = 1000(Min)@ lc= -3A • Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT62; -SOV(Min)- BDT62A; • -1 OOV(Min)- BDT62B; -120V(Min)- BDT62C • Complement to Type BDT63/A/B/C 2 APPLICATIONS • Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO PARAMETER Collector-Base Voltage PIN 1.BASE VALUE BDT62 -60 BDT62A -80 BDT62B -100 BDT62C -120 BDT62 -60 BDT62A -80 2. COLLECTOR S.a/IITTER UNIT TO-220C package V -« B •-« V »• to **i r€ft F U i -,,;, AT VCEO VEBO Ic ICM Collector-Emitter Voltage -100 BDT62C -120 Emitter-Base Voltage K V Collector Current-Continuous -10 A Collector Current-Peak -15 A Base Current PC T, -0.25 A Collector Power Dissipation TC=25"C 90 W Junction Temperature 150 C -65-150 'C Storage Ttemperature Range !.•-;• - ![ I \i 1 -5 IB Tstg BDT62B i *a !'l 1 >i V H C T~ SYMBOL Rthj-c Rthj-c PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient .. - Quality Semi-Conductors MAX UNIT 1.39 c/w 70 c/w •, . ff. L V1 D *•-* j - L H ^- c' 1 J mm MIN CUM 15.70 A B 'I D F 0 h j K THERMAL CHARACTERISTICS i L 0 R S U V *S 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.GO 5.18 2.00 0.40 13.40 1.30 2.90 2.70 1.31 6.65 8.86 BDT62/A/B/C Silicon PNP Darlington Power Transistors ELECTRICAL CHARACTERISTICS TC=25"C unless otherwise specified PARAMETER SYMBOL CONDITIONS Collector-Emitter Breakdown Voltage TYP. MAX UNIT -60 BDT62 VIBRJCEO MIN BDT62A -80 i _— orim A- u— n V BDT62B -100 BDT62C -120 VcE(sat)-1 Collector-Emitter Saturation Voltage | C =-3A; ! B =-12mA -2.0 V VcE(sat}-2 Collector-Emitter Saturation Voltage lc= -8A; IB= -80mA -2.5 V Base-Emitter On Voltage lc= -3A; VCE= -3V -2.5 V BDT62 VCB= -60V; IE= 0 VcB=-30V; l E =0;Tj=150'C -0.2 -2.0 BDT62A VCB= -80V; IE= 0 Vce=-40V; l E =0;Tj=150"C -0.2 -2.0 BDT62B V CB =-100V;I E =0 VCB=-50V; l E =0;Tj=150C -0.2 -2.0 BDT62C V CB =-120V;I E =0 V CB =-60V;le=0;Tj=150'C -0.2 -2.0 BDT62 VCE= -30V; IB= 0 -0.5 BDT62A VCE= -40V; IB= 0 -0.5 BDT62B VCE= -50V; IB= 0 -0.5 BDT62C VCE= -60V; IB= 0 -0.5 VsE(on) ICBO ICED Collector Cutoff Current Collector Cutoff Current mA Emitter Cutoff Current VEB= -5V; lc= 0 hpE-1 DC Current Gain lc= -3A; VCE= -3V hFE-2 DC Current Gain lc=-10A; V CE =-3V VECF C-E Diode Forward Voltage IE= -3A IEBO mA -5 mA -2.0 V 1000 200 Switching Times ton Turn-On Time i — -3A toff Turn-Off Time | n <- loo— 0.5 M S 2.5 M S 19mA