ON NTD2955T4G Power mosfet Datasheet

NTD2955, NVD2955
Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low−voltage, high−
speed switching applications in power supplies, converters, and power
motor controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer an additional safety margin against unexpected
voltage transients.
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V(BR)DSS
RDS(on) TYP
ID MAX
−60 V
155 mW @ −10 V, 6 A
−12 A
D
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and
P−Channel
G
to Withstand High Energy in the Avalanche and Commutation Modes
• NVD and SVD Prefix for Automotive and Other Applications
4
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
1
1 2
Symbol
Value
Unit
3
Drain−to−Source Voltage
VDSS
−60
Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 25
Vdc
Vpk
DPAK
CASE 369C
STYLE 2
ID
IDM
−12
−18
Adc
Apk
Drain Current
Dr− Continuous @ Ta = 25°C
Dr− Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ Ta = 25°C
PD
55
W
Operating and Storage Temperature
Range
TJ, Tstg
−55 to
175
°C
EAS
216
mJ
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 12 Apk, L = 3.0 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in. from case for
10 seconds
2.73
71.4
100
°C/W
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu area = 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu area = 0.412 in2).
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1
3
Drain
Gate
Source
RqJC
RqJA
RqJA
2
AYWW
NT
2955G
Rating
AYWW
NT
2955G
•
S
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
A
NT2955/NV2955
NT2955
Y
WW
G
1 2 3
Gate Drain Source
= Assembly Location*
= Specific Device Code (DPAK)
= Specific Device Code (IPAK)
= Year
= Work Week
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
March, 2017 − Rev. 16
1
Publication Order Number:
NTD2955/D
NTD2955, NVD2955
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
−60
−
−
67
−
−
−
−
−
−
−10
−100
−
−
−100
−2.0
−
−2.8
4.5
−4.0
−
−
0.155
0.180
−1.86
−
−2.6
−2.0
8.0
−
Mhos
pF
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = −0.25 mA)
(Positive Temperature Coefficient)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = −60 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = −60 Vdc, TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
mAdc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
(Negative Temperature Coefficient)
VGS(th)
Static Drain−Source On−State Resistance
(VGS = −10 Vdc, ID = −6.0 Adc)
RDS(on)
Drain−to−Source On−Voltage
(VGS = −10 Vdc, ID = −12 Adc)
(VGS = −10 Vdc, ID = −6.0 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)
Vdc
mV/°C
W
Vdc
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = −25 Vdc, VGS = 0 Vdc,
F = 1.0 MHz)
Reverse Transfer Capacitance
Ciss
−
500
750
Coss
−
150
250
Crss
−
50
100
td(on)
−
10
20
tr
−
45
85
td(off)
−
26
40
SWITCHING CHARACTERISTICS (Notes 3 and 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = −30 Vdc, ID = −12 A,
VGS = −10 V, RG = 9.1 W)
Fall Time
Gate Charge
(VDS = −48 Vdc, VGS = −10 Vdc,
ID = −12 A)
tf
−
48
90
QT
−
15
30
QGS
−
4.0
−
QGD
−
7.0
−
−
−
−1.6
−1.3
−2.5
−
trr
−
50
ta
−
40
−
tb
−
10
−
QRR
−
0.10
−
ns
nC
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
VSD
Diode Forward On−Voltage
(IS = 12 Adc, VGS = 0 V)
(IS = 12 Adc, VGS = 0 V, TJ = 150°C)
Reverse Recovery Time
(IS = 12 A, dIS/dt = 100 A/ms ,VGS = 0 V)
Reverse Recovery Stored Charge
Vdc
ns
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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2
NTD2955, NVD2955
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = -10 V
TJ = 25°C
-9 V
-8 V
-9.5 V
20
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
25
-7 V
-6.5 V
15
-6 V
10
-5.5 V
-5 V
5
0
0
1
2
3
4
5
6
7
8
9
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
24
22
20
25°C
12
10
8
6
4
2
2
4
6
8
3
5
7
9
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
0.40
0.35
TJ = 125°C
0.25
25°C
0.15
-55°C
0.10
0.05
0
0
3
9
18
6
15
12
−ID, DRAIN CURRENT (AMPS)
21
24
0.250
TJ = 25°C
0.225
0.200
0.175
VGS = −10 V
0.150
-15 V
0.125
0.100
0.075
0.050
0
Figure 3. On−Resistance versus Drain Current
and Temperature
1000
2.0
1.8
1.6
3
9
18
6
12
15
-ID, DRAIN CURRENT (AMPS)
21
24
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
VGS = 0 V
VGS = −10 V
ID = −6 A
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
VGS = −10 V
0.20
10
Figure 2. Transfer Characteristics
0.50
0.30
125°C
16
14
Figure 1. On−Region Characteristics
0.45
TJ = -55°C
18
0
10
VDS ≥ −10 V
1.4
1.2
1.0
0.8
0.6
0.4
100
TJ = 125°C
10
100°C
0.2
0
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
150
1
175
5
Figure 5. On−Resistance Variation with
Temperature
10 15 20 25 30 35 40 45 50 55
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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3
60
C, CAPACITANCE (pF)
1000
VDS = 0 V
VGS = 0 V
TJ = 25°C
Ciss
600
Ciss
400
Coss
200
Crss
0
10
5
0
5
-VGS
10
15
20
25
ID = 12 A
TJ = 25°C
VDS
12.5
Crss
800
15
QT
10
60
50
40
VGS
7.5
30
QGD
QGS
5
20
2.5
10
0
0
2
4
6
8
10
12
0
16
14
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1200
−VGS, GATE−TO−SOURCE VOLTAGE (V)
NTD2955, NVD2955
QT, TOTAL GATE CHARGE (nC)
-VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 7. Capacitance Variation
15
VDD = −30 V
ID = −12 A
VGS = −10 V
TJ = 25°C
−IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
1000
100
tf
tr
td(off)
td(on)
10
1
1
10
VGS = 0 V
TJ = 25°C
10
5
0
100
0
0.5
0.25
RG, GATE RESISTANCE (W)
1
0.75
1.25
1.5
1.75
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus Current
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
ID, DRAIN CURRENT (AMPS)
100
VGS = −15 V
SINGLE PULSE
TC = 25°C
10
di/dt
100 ms
IS
1 ms
trr
10 ms
1
dc
ta
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
tb
TIME
0.25 IS
tp
10
100
IS
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Diode Reverse Recovery Waveform
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTD2955, NVD2955
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
P(pk)
0.1 0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
t, TIME (s)
1.0E-01
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
1.0E+00
1.0E+01
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD2955G
DPAK
(Pb−Free)
75 Units / Rail
NTD2955−1G
IPAK
(Pb−Free)
75 Units / Rail
NTD2955T4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD2955T4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
SVD2955T4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
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5
NTD2955, NVD2955
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
A
E
C
A
b3
B
c2
4
L3
Z
D
1
2
H
DETAIL A
3
L4
NOTE 7
c
SIDE VIEW
b2
e
b
TOP VIEW
0.005 (0.13)
M
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD2955, NVD2955
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
M
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD2955/D