PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak IRFR5305 I-Pak IRFU5305 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. Units -31 -22 -110 110 0.71 ± 20 280 -16 11 -5.0 -55 to + 175 A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient** www.kersemi.com Typ. Max. Units ––– ––– ––– 1.4 50 110 °C/W 1 12/13/04 IRFR/U5305PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -55 ––– ––– V VGS = 0V, ID = -250µA ––– -0.034 ––– V/°C Reference to 25°C, I D = -1mA ––– ––– 0.065 Ω VGS = -10V, ID = -16A -2.0 ––– -4.0 V VDS = VGS, ID = -250µA 8.0 ––– ––– S VDS = -25V, ID = -16A ––– ––– -25 VDS = -55V, VGS = 0V µA ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 20V nA ––– ––– -100 VGS = -20V ––– ––– 63 ID = -16A ––– ––– 13 nC VDS = -44V ––– ––– 29 VGS = -10V, See Fig. 6 and 13 ––– 14 ––– VDD = -28V ––– 66 ––– ID = -16A ns ––– 39 ––– RG = 6.8Ω ––– 63 ––– RD = 1.6Ω, See Fig. 10 D Between lead, 4.5 ––– ––– 6mm (0.25in.) nH G from package ––– 7.5 ––– and center of die contact S ––– 1200 ––– VGS = 0V ––– 520 ––– pF VDS = -25V ––– 250 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– -31 -110 ––– ––– ––– ––– 71 170 -1.3 110 250 A V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25°C, IS = -16A, VGS = 0V TJ = 25°C, IF = -16A di/dt = -100A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) VDD = -25V, starting TJ = 25°C, L = 2.1mH RG = 25Ω, IAS = -16A. (See Figure 12) ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, Pulse width ≤ 300µs; duty cycle ≤ 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRF5305 data and test conditions. T J ≤ 175°C 2 www.kersemi.com IRFR/U5305PbF 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) 100 10 -4.5V 100 20µs PULSE WIDTH Tc J = 25°C A 1 0.1 1 10 10 -4.5V R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 2.0 TJ = 25°C TJ = 175°C 10 V DS = -25V 20µs PULSE WIDTH 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.kersemi.com 10 A 100 Fig 2. Typical Output Characteristics 100 5 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20µs PULSE WIDTH TCJ = 175°C 1 0.1 100 -VDS , Drain-to-Source Voltage (V) 4 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP TOP 10 A I D = -27A 1.5 1.0 0.5 V GS = -10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U5305PbF C, Capacitance (pF) 2000 Ciss 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) 2500 Coss 1500 1000 Crss 500 0 10 V DS = -44V V DS = -28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 1 I D = -16A 100 0 -VDS , Drain-to-Source Voltage (V) 30 40 50 A 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -ID , Drain Current (A) -ISD , Reverse Drain Current (A) 20 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 TJ = 175°C TJ = 25°C VGS = 0V 10 0.4 0.8 1.2 1.6 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 A 2.0 100 100µs 10 1ms 10ms TC = 25°C TJ = 175°C Single Pulse 1 1 A 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.kersemi.com IRFR/U5305PbF RD VDS 35 VGS 30 D.U.T. RG - -ID , Drain Current (A) + VDD 25 -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 15 Fig 10a. Switching Time Test Circuit 10 td(on) tr t d(off) tf VGS 5 10% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 5 IRFR/U5305PbF + - D.U.T RG IAS -20V tp VDD A DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS E AS , Single Pulse Avalanche Energy (mJ) L VDS 700 TOP 600 BOTTOM ID -6.6A -11A -16A 500 400 300 200 100 0 VDD = -25V 25 50 A 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.kersemi.com IRFR/U5305PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + ** RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS * + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS www.kersemi.com 7 IRFR/U5305PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" PART NUMBER INTERNAT IONAL RECTIF IER LOGO Note: "P" in ass embly line pos ition indicates "Lead-Free" IRFU120 12 916A 34 ASSEMBLY LOT CODE DATE CODE YEAR 9 = 1999 WE EK 16 LINE A OR PART NUMBER INT ERNATIONAL RECTIFIER LOGO IRFU120 12 ASSEMBLY LOT CODE 8 34 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY S IT E CODE www.kersemi.com IRFR/U5305PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE : T HIS IS AN IRF U120 WIT H ASS EMB LY LOT CODE 5678 AS SE MBLED ON WW 19, 1999 IN T HE ASS EMBLY LINE "A" INT ERNATIONAL RE CT IFIE R LOGO PART NUMBER IRF U120 919A 56 78 ASS EMBLY LOT CODE Note: "P" in as s embly line pos ition indicates "Lead-F ree" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMB ER IRF U120 56 AS SEMBLY LOT CODE www.kersemi.com 78 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY SIT E CODE 9 IRFR/U5305PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. 10 www.kersemi.com