MUR20005CT thru MUR20020CTR
Silicon Super Fast
Recovery Diode
VRRM = 50 V - 200 V
IF(AV) = 200 A
Features
• High Surge Capability
• Types from 50 V to 200 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR20005CT (R) MUR20010CT (R)
MUR20020CT (R)
Unit
200
V
Repetitive peak reverse voltage
VRRM
50
RMS reverse voltage
VRMS
35
70
140
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
50
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
200
-55 to 150
-55 to 150
V
°C
°C
MUR20020CT (R)
Unit
100
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous forward
voltage (per leg)
Maximum reverse current at
rated DC blocking voltage (per
leg)
Maximum reverse recovery time
(per leg)
Symbol
Conditions
IF(AV)
TC = 140 °C
200
200
200
A
IFSM
tp = 8.3 ms, half sine
2000
2000
2000
A
VF
IFM = 100 A, Tj = 25 °C
1.0
1.0
1.0
V
Tj = 25 °C
25
25
25
μA
Tj = 125 °C
3
3
3
mA
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
75
75
75
nS
0.45
0.45
0.45
°C/W
IR
Trr
MUR20005CT (R) MUR20010CT (R)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘJC
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MUR20005CT thru MUR20020CTR
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MUR20005CT thru MUR20020CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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