N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDD1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability VDS = 40V ID = 50A @VGS = 10V RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V Low RDS(ON), low gate charge can be offering superior benefit in the application. Applications Inverters General purpose applications D G S Absolute Maximum Ratings (TC =25oC unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage o Continuous Drain Current (Note 2) TC=25 C o TA=25 C Rating Unit VDSS 40 V VGSS ±20 V 50 A 15.2 A 100 A (a) (b) Pulsed Drain Current ID IDM o Power Dissipation for Single Operation TC=25 C o TA=25 C Single Pulse Avalanche Energy (Note 3) Junction and Storage Temperature Range 45 PD W 3.1 EAS 153 TJ, Tstg -55~+150 Symbol Rating RθJA 40 RθJC 2.8 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Case Jun. 2015. Version 1.3 1 Unit o C/W MagnaChip Semiconductor Ltd. MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ MDD1752 Part Number Temp. Range Package Packing RoHS Status MDD1752RH -55~150oC TO-252 Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 40 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.7 3.0 V Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - 0.1 VGS = 10V, ID = 14A - 6.1 8.0 VGS = 4.5V, ID = 11A - 8.2 10.5 VDS = 5V, ID = 14A - 58 - - 26.4 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gFS μA mΩ S Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs - 3.6 - Gate-Drain Charge Qgd VDS = 20V, ID = 14A, VGS = 10V - 6.8 - Input Capacitance Ciss - 1480 - Reverse Transfer Capacitance Crss - 113 - Output Capacitance Coss - 243 - Turn-On Delay Time td(on) - 9 - Turn-On Rise Time tr - 21 - Turn-Off Delay Time td(off) - 31 - - 18 - - 0.8 1.2 - 26 - ns - 11 - nC Turn-Off Fall Time VDS = 20V, VGS = 0V, f = 1.0MHz nC VGS = 10V ,VDS = 20V, ID = 1A , RGEN = 6Ω tf pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 14A, VGS = 0V IF = 14A, di/dt = 100A/μs V Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. PD is based on TJ(MAX)=150°C a. PD (TC=25°C) is based on RθJC, b. PD (TA=25°C) is based on RθJA 3. Starting TJ=25°C, L=1mH, IAS=17.5A, VDD=40V, VGS=10V Jun. 2015. Version 1.3 2 MagnaChip Semiconductor Ltd. MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ Ordering Information 3.0 4.0V 4.5V 2.8 VGS = 10V Normalized Drain-Source On-Resistance ID, Drain Current [A] 80 5.0V 6.0V 60 3.5V 40 20 VGS = 3V 2.6 3.5V 2.4 2.2 2.0 4.0V 1.8 1.6 5.0V 1.4 6.0V 4.5V 1.2 10V 1.0 3.0V 0.8 0 0.0 0.5 1.0 1.5 2.0 0.6 2.5 0 20 40 VDS, Drain-Source Voltage [V] 60 80 100 ID, Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 20.0 1.6 1. VGS = 10 V 2. ID = 14 A 1.4 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance ※ Notes : 1.2 1.0 0.8 17.5 15.0 TA = 125℃ 12.5 10.0 TA = 25℃ 7.5 0.6 -50 -25 0 25 50 75 100 125 5.0 150 2 4 o Fig.3 On-Resistance Variation with Temperature 8 10 Fig.4 On-Resistance Variation with Gate to Source Voltage 3 10 100 ※ Notes : ※ Notes : VDS = 5V 2 VGS = 0V IDR, Reverse Drain Current [A] 10 80 ID, Drain Current [A] 6 VGS, Gate to Source Volatge [V] TJ, Junction Temperature [ C] 60 TA=125℃ 40 25℃ -55℃ 20 1 10 0 10 -1 10 TA=125℃ 25℃ -55℃ -2 10 -3 10 -4 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 4.5 VGS, Gate-Source Voltage [V] 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Jun. 2015. Version 1.3 0.2 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ 100 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 14A 1.6n 8 Ciss 10V 6 VDS = 20V Capacitance [F] VGS, Gate-Source Voltage [V] MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ 2.0n 10 30V 4 1.2n 800.0p ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 400.0p 2 Coss Crss 0.0 0 0 10 20 30 0 40 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 I(AS), AVALANCHE CURRENT (A) 2 ID, Drain Current [A] 1 ms 1 10 ms 100 ms 10 1s 0 10 -1 10 -2 40 100 3 100 s 10 30 Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 10 20 VDS, Drain-Source Voltage [V] DC Single Pulse RthJA=96℃/W TA=25℃ 10 -1 10 0 10 1 10 TJ=25℃ 10 1 0.1 2 1 10 tAV, TIME IN AVALANCHE (ms) VDS, Drain-Source Voltage [V] Fig.10 Unclamped Inductive Switching Capability Fig.9 Maximum Safe Operating Area 0 70 10 D=0.5 Zθ JA(t), Thermal Response ID, Drain Current [A] 60 50 40 30 20 0.2 -1 10 0.1 0.05 ※ Notes : Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA RΘ JA=96℃/W 0.02 single pulse -2 10 0.01 10 0 25 -3 50 75 100 125 10 150 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Maximum Drain Current vs. Case Temperature Jun. 2015. Version 1.3 -4 10 TC, Case Temperature [℃] Fig.12 Transient Thermal Response Curve 4 MagnaChip Semiconductor Ltd. 80 I(pk), Peak Transient Current [A] P(pk), Peak Transient Power [W] 50 Single Pulse RΘ JA=96℃/W TA=25℃ 60 40 20 0 1E-3 0.01 0.1 1 10 100 40 30 20 10 0 1E-3 1000 Single Pulse RΘ JA=96℃/W TA=25℃ 0.01 0.1 1 10 100 1000 T1, Time [sec] T1, Time [sec] Fig13. Single Pulse Maximum Power Dissipation Fig14. Single Pulse Maximum Peak Current Jun. 2015. Version 1.3 5 MagnaChip Semiconductor Ltd. MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ 100 MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ Physical Dimensions D-PAK, 3L Dimensions are in millimeters, unless otherwise specified Worldwide Sales Support Locations Jun. 2015. Version 1.3 6 MagnaChip Semiconductor Ltd. MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jun. 2015. Version 1.3 7 MagnaChip Semiconductor Ltd.