AOD460 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD460 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 25V ID = 25 A (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 10V) RDS(ON) < 24 mΩ (VGS = 4.5V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G C C Repetitive avalanche energy 0.1mH TC=25°C Power Dissipation B Power Dissipation A Units V ±20 V 25 TC=100°C Pulsed Drain Current Avalanche Current Maximum 25 C TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Case B Alpha & Omega Semiconductor, Ltd. IDM 70 IAR 20 A EAR 20 mJ 30 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 15 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A 20 PD TC=100°C A ID RθJA RθJC Typ 15 41 3.6 °C Max 20 50 5 Units °C/W °C/W °C/W www.aosmd.com AOD460 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V Typ V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 70 TJ=55°C VGS=10V, ID=20A 100 nA 1.8 2.5 V 11.5 14 A Static Drain-Source On-Resistance VGS=4.5V, ID=20A 19.2 gFS Forward Transconductance VDS=5V, ID=20A 18.9 VSD Diode Forward Voltage IS=1A, VGS=0V 0.74 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 17.7 830 VGS=0V, VDS=12.5V, f=1MHz µA 5 RDS(ON) Output Capacitance Units 25 VDS=20V, VGS=0V IDSS Coss Max mΩ 24 mΩ 1 V 25 A 1000 pF S 224 pF 127 pF 0.93 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15.3 19 nC Qg(4.5V) Total Gate Charge 7.4 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=20A VGS=10V, VDS=12.5V, RL=0.625Ω, RGEN=3Ω 2.7 nC 4.3 nC 8 ns 11.7 ns 30 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 23.5 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 12.8 11 ns 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev 3: Sep 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 80 VDS=5V 10V 6V 60 30 ID(A) ID (A) 4.5V 40 125°C 20 25°C 10 20 VGS=3V 0 0 0 1 2 3 4 2 5 2.5 25 3.5 4 4.5 5 1.6 Normalized On-Resistance VGS=4.5V 20 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 15 10 VGS=10V VGS=10V, 20A 1.4 1.2 VGS=4.5V,20A 1 5 0 5 10 15 20 25 30 35 40 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 40 100 125 150 1.0E+02 35 1.0E+01 ID=20A 125°C 1.0E+00 30 IS (A) RDS(ON) (mΩ ) 75 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 25 125°C 20 1.0E-01 1.0E-02 25°C 1.0E-03 1.0E-04 15 25°C 1.0E-05 10 2.00 0.0 4.00 6.00 8.00 10.00 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1400 VDS=12.5V ID=20A 1200 Capacitance (pF) VGS (Volts) 8 6 4 1000 Ciss 800 600 400 Coss 200 2 Crss 0 0 0 0 2 4 6 8 10 12 14 16 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100 200 RDS(ON) limited 10µs Power (W) DC ID (Amps) TJ(Max)=175°C TC=25°C 160 100µs 10 1ms 1 120 80 40 TJ(Max)=175°C, TC=25°C 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5°C/W 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Single Pulse 0.01 0.00001 0.0001 Ton 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 L⋅ ID tA = BV − VDD 25 30 Power Dissipation (W) ID(A), Peak Avalanche Current 30 20 15 10 TA=25°C 25 20 15 10 5 5 0.00001 0 0.0001 0.001 0 25 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 100 125 150 175 50 TA=25°C 25 40 20 Power (W) Current rating ID(A) 75 TCASE (°C) Figure 13: Power De-rating (Note B) 30 15 30 20 10 10 5 0 0.0001 0.001 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) 10 Zθ JA Normalized Transient Thermal Resistance 50 175 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 0.001 0.00001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W Single Pulse 0.0001 0.001 0.01 0.1 PD Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD460 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com