Anaren MSK4226G 75 volt 20 amp mosfet h-bridge with gate drive Datasheet

MIL-PRF-38534 AND 38535 CERTIFIED FACILITY
75 VOLT 20 AMP MOSFET
H-BRIDGE WITH
GATE DRIVE
4226
FEATURES:
• Low RDS(ON) 0.013Ω Typical
• Non-Hermetic Low Cost Complete H-Bridge
•20 Amp Capability, 75 Volt Maximum Rating
• Self-contained Smart Lowside/Highside Drive Circuitry
• Shoot-through Protection
• Isolated Case Allows Direct Heatsinking
• Logic Level Disable Input
• Individual Logic Level Gate Drive Inputs for Various Modulation Schemes
DESCRIPTION:
The MSK4226 is a complete H-Bridge circuit to be used for DC brushed motor control or Class D switchmode amplification. All of the drive/control circuitry for the lowside and highside switches are internal to the circuit. Logic level inputs are
provided for controlling each MOSFET independently, allowing every possible switch combination except those that would
cause a simultaneous conduction or shoot-through condition for each half bridge. This gives the user freedom to use various
modulation schemes for PWM control. The MSK4226 is constructed in a space efficient plastic power package that can be
directly bolted to a heatsink.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
PIN-OUT INFORMATION
1
2
3
4
5
6
7
8
9
10
1
NC
VCC
BHI
DIS
BLI
AHI
ALI
GND
GND
NC
20
19
18
17
16
15
14
13
12
11
RSENSE B
RSENSE B
OUTPUT B
OUTPUT B
V+
V+
OUTPUT A
OUTPUT A
RSENSE A
RSENSE A
8548-151 Rev. G 4/15
ABSOLUTE MAXIMUM RATINGS
V+
VCC
IOUT
IPK
VOUT
θJC
5
High Voltage Supply 6
75V
Logic Supply
16V
Continuous Output Current
20A
Peak Output Current
40A
Output Voltage Range
GND -2V min. to V + max.
Thermal Resistance
3.0°C/W
(Output Switches @ 125°C)
TST Storage Temperature Range
TLD Lead Temperature Range
(10 Seconds)
TC Case Operating Temperature
MSK4226
TJ Junction Temperature
ELECTRICAL SPECIFICATIONS
300°C
-40°C to +85°C
+150°C
Tc= +25°C Unless Otherwise Specified
Test Conditions
Parameter
-55°C to +125°C
2
MSK4226
Units
Min.
Typ.
Max.
Each MOSFET ID=20A
-
-
0.013
Ω
Each MOSFET ID=20A 3
-
0.45
0.52
V
Each MOSFET IS=20A Intrinsic Diode 3
-
1.0
1.3
V
Intrinsic Diode
-
-
280
nS
Each MOSFET V+=70V
-
10
250
uA
Quiescent Bias Current
-
29
50
mA
VCC Voltage Range 1
10
12
15
V
Input Voltage LO
-
-
0.8
V
Input Voltage HI
2.7
-
-
V
-
-
270
uA
Rise Time
-
40
-
nS
Fall Time
-
30
-
nS
Dead Time
-
45
-
nS
OUTPUT CHARACTERISTICS
RDS (ON) 1
4
VDS(ON) Voltage
Instantaneous Forward Voltage
Reverse Recovery Time 1
Leakage Current
VCC SUPPLY CHARACTERISTICS
LOGIC CONTROL INPUTS,ALI,BLI,AHI,BHI and DIS 1
Input Current (VIN=0V)
SWITCHING CHARACTERISTICS 1
RL=100Ω
NOTES:
1
2
3
4
5
6
Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
VCC=+12V, V+=28V, RSENSE A,B=Ground, DIS=0V unless otherwise specified.
Measured using a 300µS pulse with a 2% Duty Cycle.
On Resistance is specified for the Internal MOSFET for Thermal Calculations. It does not include the package pin resistance.
Continuous operation at or above absolute maximum ratings may adversely effect the device performance and/or life cycle.
When applying power to the device, apply the low voltage followed by the high voltage or alternatively, apply both at the same time.
Do not apply high voltage without low voltage present.
2
8548-151 Rev. G 4/15
APPLICATION NOTES
MSK4226 PIN DESCRIPTIONS
TYPICAL SYSTEM OPERATION
VCC - Is the low voltage supply for powering internal logic and
drivers for the lowside and highside MOSFETS.
The supplies for the highside drivers are derived from this voltage.
V+ - Is the higher voltage H-bridge supply. The MOSFETS obtain
the drive current from this supply pin. The voltage on this pin is
limited by the drive IC. The MOSFETS are rated at 75 volts. Proper
by-passing to GND with sufficient capacitance to suppress any
voltage transients, and to ensure removing any drooping during
switching, should be done as close to the pins of the module as
possible.
OUTPUT A - Is the output pin for the A half bridge.
OUTPUT B - Is the output pin for the B half bridge.
RSENSE A - Is the connection for the bottom of the A half bridge.
This can have a sense resistor connection to the V+ return ground
for current limit sensing, or can be connected directly to ground.
The maximum voltage on this pin is ±2 volts with respect to GND.
This is a diagram of a typical application of the MSK4226.
The design VCC voltage is +12 volts and should have a good
low ESR bypass capacitor such as a tantalum electrolytic. The
digital inputs can come from a microprocessor or any type of PWM
controller. The controller will use the current sense signal to either
control current through PWM, current limit the bridge, or both.
RSENSE B - Is the connection for the bottom of the B half bridge.
This can have a sense resistor connection to the V+ return ground
for current limit sensing, or can be connected directly to ground.
The maximum voltage on this pin is ±2 volts with respect to GND.
GND - Is the return connection for the input logic and VCC.
Current sensing is done in this case by a 0.01 ohm sense
resistor to sense current from both legs of the bridge separately.
It is important to make the high current traces as big as possible
to keep inductance down. The storage capacitor connected to
the V+ and the module should be large enough to provide the
high energy pulse without the voltage sagging too far. A low
ESR ceramic capacitor or large polypropylene capacitor will be
required. Mount the capacitor as close to the module as possible.
The connection between GND and the V+ return should not be
carrying any motor current. The sense resistor signal is common mode filtered as necessary to feed the limiting circuitry for
the microprocessor. This application will allow full four quadrant
torque control for a closed loop servo system. Any modulation
scheme may be used, however, but the current sensing scheme
may have to change.
IN
DIS - Is the connection for disabling all 4 output switches. DISABLE high overrides all other inputs. When taken low, everything
functions normally. An internal pullup to VCC will keep DISABLE
high if left unconnected.
ALI - Is the logic level digital input for controlling the lowside
MOSFET in the A half bridge. If AHI is driven high or not connected
externally then ALI controls both the lowside and highside MOSFETs, with dead time in between. This is due to the simultaneous
conduction lockout feature. DIS will override the ALI input.
AHI - Is the logic level digital input for controlling the highside
MOSFET in the A half bridge. ALI high level input will override
this input to prevent simultaneous conduction. DIS will override
the AHI input.
A snubber network is usually required, due to the inductance
in the power loop. It is important to design the snubber network
to suppress any positive spikes above 70V and negative spikes
below -2V with respect to ground.
BLI - Is the logic level digital input for controlling the lowside
MOSFET in the B half bridge. If BHI is driven high or not connected externally then BLI controls both the lowside and highside
MOSFETs, with dead time in between. This is due to the simultaneous conduction lockout feature. DIS will override the BLI input.
*There are certain inductive load situations that can possibly
cause a momentary shoot-through or cross-conduction condition
in the MSK4226. This shoot-through is approximately 100nSec
long and can be several amps, depending on the layout and
impedence of the bypassing circuit. Most bypassing and current
sensing filtering will usually eliminate the effects. However, in the
case where it is still present, or the sense resistor trace lengths
are long, reverse-biased ultra-fast recovery diodes or power
schottky diodes from RSENSE A and RSENSE B to power ground
will minimize or eliminate the situation.
BHI - Is the logic level digital input for controlling the highside
MOSFET in the B half bridge. BLI high level input will override
this input to prevent simultaneous conduction. DIS will override
the BHI input.
3
8548-151 Rev. G 4/15
MSK4226 EVALUATION SCHEMATIC
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8548-151 Rev. G 4/15
MECHANICAL SPECIFICATIONS
MOUNTING TORQUE: 3-4 INCH POUNDS
ESD TRIANGLE INDICATES PIN 1
WEIGHT=36.6 GRAMS TYPICAL
ALL DIMENSIONS ARE SPECIFIED IN INCHES
CAUTION: THIS IS A NON-HERMETIC DEVICE. DO NOT EXPOSE PLASTIC HOUSING TO LIQUID
ORDERING INFORMATION
Part
Number
Screening
Level
Lead
Configuration
MSK4226S
Industrial
Straight
MSK4226D
Industrial
Down
MSK4226U
Industrial
Up
MSK4226G
Industrial
Gull Wing
5
8548-151 Rev. G 4/15
REVISION HISTORY
MSK
www.anaren.com/msk
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make
changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
Please visit our website for the most recent revision of this datasheet.
6
8548-151 Rev. G 4/15
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