DS2906SA Rectifier Diode DS5922-1.1 March 2009 (LN26638) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VRRM IF(AV) IFSM 4000V 5651A 83000A APPLICATIONS Rectification Free-wheel Diode DC Motor Control Power Supplies Welding Battery Chargers VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VDRM V DS2906SA40 DS2906SA39 DS2906SA38 DS2906SA37 DS2906SA36 DS2906SA35 4000 3900 3800 3700 3600 3500 Conditions VRSM = VRRM+100V Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: Outline type code: A (See Package Details for further information) Fig. 1 Package outlines DS2906SA39 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/8 www.dynexsemi.com DS2906SA SEMICONDUCTOR CURRENT RATINGS Tcase = 75°C unless stated otherwise Parameter Symbol Test Conditions Max. Units 5651 A Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value - 8877 A Continuous (direct) on-state current - 8208 A 3707 A IF Half wave resistive load Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 5821 A Continuous (direct) on-state current - 4976 A Test Conditions Max. Units 4350 A IF Half wave resistive load Tcase = 100°C unless stated otherwise Parameter Symbol Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value - 6830 A Continuous (direct) on-state current - 6160 A 2795 A IF Half wave resistive load Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 4390 A Continuous (direct) on-state current - 3640 A IF Half wave resistive load 2/8 www.dynexsemi.com DS2906SA SEMICONDUCTOR SURGE RATINGS Symbol IFSM 2 It IFSM 2 It Parameter Surge (non-repetitive) on-state current 2 I t for fusing Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 150°C 66.5 kA VR = 50% VRRM - ¼ sine 22 MA s 10ms half sine, Tcase = 150°C 83 kA VR = 0 34.5 MA s Min. Max. Units 2 I t for fusing 2 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Virtual junction temperature Test Conditions Double side cooled DC - 0.0065 °C/W Single side cooled Anode DC - 0.013 °C/W Cathode DC - 0.013 °C/W Clamping force 83.0kN Double side - 0.001 °C/W (with mounting compound) Single side - 0.002 °C/W On-state (conducting) - 160 °C Reverse (blocking) - 150 °C Tstg Storage temperature range -55 150 °C Fm Clamping force 75.0 91.0 kN CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units VFM Forward voltage At 3000A peak, Tcase = 25°C - 1.06 V IRM Peak reverse current At VDRM, Tcase = 150°C - 400 mA VTO Threshold voltage At Tvj = 150°C - 0.78 V rT Slope resistance At Tvj = 150°C - 0.0763 m 3/8 www.dynexsemi.com DS2906SA SEMICONDUCTOR 8000 7000 7000 6000 6000 Mean power dissipation - (W) Instantaneous forward current, IF - (A) CURVES 5000 4000 Tj = 150°C 3000 Tj = 25°C 5000 4000 3000 2000 2000 dc 1/2 wave 3 phase 6 phase 1000 1000 0 0.5 0 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 Instantaneous forward voltage, VF - (V) 1.4 Fig.2 Maximum (limit) forward characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A) Fig.3 Power loss curves Where A = - 0.01591 B = 0.113682 -5 C = 8.04 x 10 D = - 0.00284 these values are valid for Tj = 150°C for IF 500A to 7000A 4/8 www.dynexsemi.com DS2906SA SEMICONDUCTOR 16000 350 14000 300 Reverse recovery current, IRR - (A) Stored charge, Qs - (µC) 12000 10000 8000 6000 4000 250 200 150 100 50 2000 0 0 0 0 1 2 3 4 5 6 7 Rate of decay of forward current, dIf/dt - (A/µs) 8 Fig.4 Stored charge 0.1 Conduction 90 Single side 0.013 0.0137 0.0138 0.0141 Conditions : Tcase = 150ºC VR = 0 Pulse width = 10ms 80 70 Anode side cooled 0.01 Double side cooled 0.001 Surge current IFSM - (kA) Thermal impedance - (° C/W) 8 Fig.5 Reverse recovery current Effective thermal resistance Junction to case ° C/W Double side 0.0065 d.c. 0.0072 Halfwave 0.0073 3 phase 120° 0.0076 6 phase 60° 1 2 3 4 5 6 7 Rate of decay of forward current, dIf/dt - (A/µs) 60 50 40 30 20 10 0 0.0001 0.001 1 0.01 0.1 1 Time - (s) 10 100 Fig.6 Maximum (limit) transient thermal impedance – junction to case 10 100 Number of pulses Fig.7 Multi-cycle surge current 5/8 www.dynexsemi.com DS2906SA SEMICONDUCTOR 80 Conditions: T case = 150ºC VR = 0 half sine wave Surge current, IFSM - (kA) 120 70 100 60 80 50 60 40 40 30 20 20 0 1 10 I2t value - (MA2s) 140 10 100 Pulse width, tp - (ms) Fig.8 Sub-cycle surge current 6/8 www.dynexsemi.com DS2906SA SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø 3.6 x 2.0 deep (In both electrodes) Cathode Ø148 nom 35.0 ± 0.5 Ø100 nom Ø100 nom Anode Ø138.5 Nominal weight: 2575g Clamping force: 83kN ±10% Package outline type code: A 7/8 www.dynexsemi.com DS2906SA SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8 www.dynexsemi.com