Hittite HMC864 Gaas phemt mmic 1 watt power amplifier, 24 - 29.5 ghz Datasheet

HMC864
v01.0110
LINEAR & POWER AMPLIFIERS - CHIP
3
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Typical Applications
Features
The HMC864 is ideal for:
Saturated Output Power: +31 dBm @ 18% PAE
• Point-to-Point Radios
High Output IP3: +40 dBm
• Point-to-Multi-Point Radios
High Gain: 27 dB
• VSAT
DC Supply: +6V @ 750mA
• Military & Space
No External Matching Required
Die Size: 2.41 x 1.65 x 0.1 mm
Functional Diagram
General Description
The HMC864 is a three stage GaAs pHEMT MMIC
1 Watt Power Amplifier which operates between
24 and 29.5 GHz. The HMC864 provides 27 dB of
gain, and +31 dBm of saturated output power and
18% PAE from a +6V supply. The RF I/Os are DC
blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken
with the chip in a 50 Ohm test fixture connected via
0.025 mm (1 mil) diameter wire bonds of length 0.31
mm (12 mils).
Electrical Specifi cations, TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 750mA [1]
Parameter
Min.
Frequency Range
Gain
24
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Max.
Min.
27
Saturated Output Power (Psat)
(IP3)[2]
Total Supply Current (Idd)
27
Typ.
Max.
27 - 29.5
22
GHz
25
dB
0.027
dB/ °C
27
25
dB
14
dB
29
dBm
30
dBm
39
40
dBm
750
750
mA
29
31
27
[1] Adjust Vgg between -2 to 0V to achieve Idd = 750mA typical.
[2] Measurement taken at +6V @ 750mA, Pout / Tone = +19 dBm
3 - 158
Units
0.021
19
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept
Typ.
24 - 27
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Gain vs. Temperature
30
34
20
32
30
S21
S11
S22
0
-10
-20
3
28
26
24
22
-30
+25C
+85C
-55C
20
-40
18
21
24
27
30
24
25
FREQUENCY (GHz)
26
27
Input Return Loss vs. Temperature
29
30
Output Return Loss vs. Temperature
0
0
-5
+25C
+85C
-55C
-10
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
28
FREQUENCY (GHz)
+25C
+85C
-55C
-15
-20
-25
-10
-15
-30
-20
-35
-25
-40
24
25
26
27
28
29
24
30
25
27
28
29
30
29
30
P1dB vs. Supply Voltage
33
33
31
31
P1dB (dBm)
P1dB (dBm)
P1dB vs. Temperature
29
27
+25C
+85C
-55C
25
26
FREQUENCY (GHz)
FREQUENCY (GHz)
29
27
6.0V
5.5V
5.0V
25
23
LINEAR & POWER AMPLIFIERS - CHIP
10
GAIN (dB)
RESPONSE (dB)
Broadband Gain &
Return Loss vs. Frequency
23
24
25
26
27
28
FREQUENCY (GHz)
29
30
24
25
26
27
28
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 159
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Psat vs. Supply Voltage
33
31
31
Psat (dBm)
33
29
+25C
+85C
-55C
27
25
27
6.0V
5.5V
5.0V
23
24
25
26
27
28
29
30
24
25
FREQUENCY (GHz)
31
31
Psat (dBm)
33
29
27
700mA
750mA
800mA
28
29
30
29
30
29
700mA
750mA
800mA
27
25
23
23
24
25
26
27
28
29
30
24
25
FREQUENCY (GHz)
26
27
28
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +19 dBm
Output IP3 vs.
Supply Current, Pout/Tone = +19 dBm
46
46
+25C
+85C
-55C
700mA
750mA
800mA
44
IP3 (dBm)
IP3 (dBm)
27
Psat vs. Supply Current (Idd)
33
25
26
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
44
42
40
38
42
40
38
36
36
24
25
26
27
28
FREQUENCY (GHz)
3 - 160
29
25
23
P1dB (dBm)
LINEAR & POWER AMPLIFIERS - CHIP
3
Psat (dBm)
Psat vs. Temperature
29
30
24
25
26
27
28
29
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
30
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +19 dBm
Output IM3 @ Vdd = +5V
46
60
6.0V
5.5V
5.0V
50
42
40
30
24 GHz
26 GHz
28 GHz
29 GHz
20
38
10
36
0
24
25
26
27
28
29
30
12
14
16
18
FREQUENCY (GHz)
60
50
50
40
40
30
24 GHz
26 GHz
28 GHz
29 GHz
30
24
26
22
24
26
24 GHz
26 GHz
28 GHz
29 GHz
20
10
10
0
0
12
14
16
18
20
22
24
26
12
14
16
18
Pout/TONE (dBm)
20
Pout/TONE (dBm)
Power Compression @ 27 GHz
Reverse Isolation vs. Temperature
35
0
30
REVERSE ISOLATION (dB)
Pout (dBm), GAIN (dB), PAE (%)
22
Output IM3 @ Vdd = +6V
60
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd = +5.5V
20
20
Pout/TONE (dBm)
25
20
15
Pout
Gain
PAE
10
5
0
LINEAR & POWER AMPLIFIERS - CHIP
3
40
IM3 (dBc)
IP3 (dBm)
44
-10
+25C
+85C
-55C
-20
-30
-40
-50
-60
-15
-12
-9
-6
-3
0
INPUT POWER (dBm)
3
6
9
24
25
26
27
28
29
30
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 161
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Gain & Power vs.
Supply Current @ 27 GHz
Gain & Power vs.
Supply Voltage @ 27 GHz
GAIN (dB), P1dB (dBm), Psat (dBm)
35
Gain (dB)
P1dB (dBm)
Psat (dBm)
33
31
29
27
25
700
Gain (dB)
P1dB (dBm)
Psat (dBm)
33
31
29
27
25
720
740
760
780
800
5
5.2
5.4
5.6
5.8
6
Vdd (V)
Idd (mA)
Power Dissipation
6
POWER DISSIPATION (W)
LINEAR & POWER AMPLIFIERS - CHIP
3
Gain (dB), P1dB (dBm), Psat (dBm)
35
24 GHz
25 GHz
26 GHz
27 GHz
28 GHz
5.5
5
4.5
4
-15
-12
-9
-6
-3
0
3
6
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vd)
+6.5V
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
RF Input Power (RFIN)
+26 dBm
+5.0
750
Channel Temperature
150 °C
+5.5
750
+6.0
750
Continuous Pdiss (T= 85 °C)
(derate 75 mW/°C above 85 °C)
4.85 W
Thermal Resistance
(channel to die bottom)
13.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Note: Amplifi er will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 750mA at +5.5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3 - 162
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Outline Drawing
Die Packaging Information
[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Pad Descriptions
Pad Number
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2
Vgg
Gate control for PA. Adjust Vgg to achieve recommended
bias current. External bypass caps 100 pF, 0.1 μF and
4.7 μF are required.
3, 5
Vdd1, 2
Drain bias for amplifier. External bypass caps
100 pF, 0.1μF and 4.7 μF are required.
4
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
LINEAR & POWER AMPLIFIERS - CHIP
3
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 163
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Assembly Diagram
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 164
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the
die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD
protective containers, and then sealed in an ESD protective bag for
shipment. Once the sealed ESD protective bag has been opened, all die
should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched
with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
3
LINEAR & POWER AMPLIFIERS - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm
(12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 165
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