FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 64M (×8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 ■ FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance 90 ns maximum access time (Flash) 70 ns maximum access time (SRAM) • Operating Temperature –25 °C to +85 °C • Package 101-ball BGA (Continued) ■ PRODUCT LINEUP Flash Memory Ordering Part No. VCCf, VCCs = 3.0 V +0.3V –0.3 V SRAM MB84VD23280EA-90/MB84VD23280EE-90 Max. Address Access Time (ns) 90 70 Max. CE Access Time (ns) 90 70 Max. OE Access Time (ns) 35 35 ■ PACKAGE 101-pin plastic FBGA BGA-101P-M01 MB84VD23280EA-90/MB84VD23280EE-90 (Continued) — FLASH MEMORY • Simultaneous Read/Write operations (flex bank) Two virtual Banks are chosen from the combination of four physical banks Host system can program or erase in one bank, then read immediately and simultaneously read from the other bank between read and write operations Read-while-erase Read-while-program • Minimum 100,000 write/erase cycles • Sector erase architecture Sixteen 4 K words and one hundred twenty-six 32 K word. Any combination of sectors can be concurrently erased. Also supports full chip erase. • Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM* Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready-Busy output (RY/BY) Hardware method for detection of program or erase cycle completion • Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode. • Low VCC write inhibit ≤ 2.5 V • Hidden ROM (Hi-ROM) region 256 byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence Factory serialized and protected to provide a secure electronic serial number (ESN) • WP/ACC input pin At VIL, allows protection of 2 of 8 Kbytes on both ends of each boot sector, regardless of sector protection/ unprotection status. At VIH, allows removal of boot sector protection At VACC, increases program performance • Program Suspend/Resume Suspends the program operation to allow a read in another address • Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device • Please refer to “MBM29DL640E” data sheet in detailed function — SRAM • Power dissipation Operating : 50 mA Max. Standby : 25 µA Max. • Power down features using CE1s and CE2s • Data retention supply voltage: 1.5 V to 3.3 V • CE1s and CE2s Chip Select • Byte data control: LBs (DQ7-DQ0), UBs (DQ15-DQ8) *: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. 2 MB84VD23280EA-90/MB84VD23280EE-90 ■ PIN ASSIGNMENT (TOP View) Marking Side A12 B12 C12 M12 N12 P12 N.C. N.C. N.C. N.C. N.C. N.C. A11 B11 C11 G11 H11 M11 N11 P11 N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. A10 B10 C10 E10 F10 G10 H10 J10 K10 M10 N10 P10 N.C. N.C. N.C. A15 A21 N.C. A16 CIOf Vss N.C. N.C. N.C. D9 E9 F9 G9 H9 J9 K9 L9 A11 A12 A13 A14 SA DQ15/A-1 DQ7 DQ14 D8 E8 F8 G8 H8 J8 K8 L8 A8 A19 A9 A10 DQ6 DQ13 DQ12 DQ5 C7 D7 E7 F7 J7 K7 L7 M7 N.C. WE CE2s A20 DQ4 Vccs CIOs N.C. C6 D6 E6 F6 J6 K6 L6 M6 N.C. WP/ACC RESET RY/BY DQ3 Vccf DQ11 N.C. D5 E5 F5 G5 H5 J5 K5 L5 LBs UBs A18 A17 DQ1 DQ9 DQ10 DQ2 D4 E4 F4 G4 H4 J4 K4 L4 A7 A6 A5 A4 Vss OE DQ0 DQ8 A3 B3 C3 E3 F3 G3 H3 J3 K3 M3 N3 P3 N.C. N.C. N.C. A3 A2 A1 A0 CEf CE1s N.C. N.C. N.C. A2 B2 C2 D2 G2 H2 M2 N2 P2 N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. A1 B1 C1 M1 N1 P1 N.C. N.C. N.C. N.C. N.C. N.C. (BGA-101P-M01) 3 MB84VD23280EA-90/MB84VD23280EE-90 ■ PIN DESCRIPTION 4 Pin name Input/ Output A18 to A0 I Address Inputs (Common) A21 to A19, A–1 I Address Inputs (Flash) SA I Address Input (SRAM) DQ15 to DQ0 I/O CEf I Chip Enable (Flash) CE1s I Chip Enable (SRAM) CE2s I Chip Enable (SRAM) OE I Output Enable (Common) WE I Write Enable (Common) RY/BY O Ready/Busy Output (Flash) Open Drain Output UBs I Upper Byte Control (SRAM) LBs I Lower Byte Control (SRAM) CIOf I I/O Configuration (Flash) CIOf = VIH is Word mode (×16), CIOf = VIL is Byte mode (×8) CIOs I I/O Configuration (SRAM) CIOs = VIH is Word mode (×16), CIOs = VIL is Byte mode (×8) RESET I Hardware Reset Pin/Sector Protection Unlock (Flash) WP/ACC I Write Protect / Acceleration (Flash) N.C. — VSS Power Device Ground (Common) VCCf Power Device Power Supply (Flash) VCCs Power Device Power Supply (SRAM) Description Data Inputs/Outputs (Common) No Internal Connection MB84VD23280EA-90/MB84VD23280EE-90 ■ BLOCK DIAGRAM VCCf VSS A21 to A0 RY/BY A21 to A0 A–1 WP/ACC RESET CEf CIOf 64 M bit Flash Memory DQ15/A–1 to DQ0 DQ15/A–1 to DQ0 VCCs VSS A18 to A0 DQ15 to DQ0 SA LBs UBs WE OE CE1s CE2s CIOs 8 M bit Static RAM 5 MB84VD23280EA-90/MB84VD23280EE-90 ■ DEVICE BUS OPERATIONS Table 1. 1 User Bus Operations (Flash = Word mode; CIOf = VCCf, SRAM = Word mode; CIOs = VCCs) Operation (1), (3) CEf CE1s CE2s OE Full Standby H H Output Disable L Read from Flash (2) L Write to Flash L Read from SRAM Write to SRAM H H Temporary Sector Group Unprotection(4) X Flash Hardware Reset X Boot Block Sector Write Protection X H X X L L H H X X L H X X L H X X L L L H H X X H X X L X X WE WP/ SA LBs UBs DQ7 to DQ0 DQ15 to DQ8 RESET ACC (6) (5) X X X X X HIGH-Z HIGH-Z H H X X X HIGH-Z HIGH-Z X X X H H HIGH-Z HIGH-Z H H X X X HIGH-Z HIGH-Z L H X X X DOUT H L X X X L L X H L X X H X H X DOUT H X DIN DIN H X L DOUT DOUT H L HIGH-Z DOUT H X L H DOUT HIGH-Z L L DIN DIN H L HIGH-Z DIN H X L H DIN HIGH-Z X X X X X X X VID X X X X X X HIGH-Z HIGH-Z L X X X X X X X X X L Legend: L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels. Notes: 6 1. Other operations except for indicated this column are inhibited. 2. WE can be VIL if OE is VIL, OE at VIH initiates the write operations. 3. Do not apply CEf = VIL, CE1s = VIL and CE2s = VIH at a time. 4. It is also used for the extended sector group protections. 5. Protect of 2 of 8 Kbytes on both ends of each boot sector. 6. SA; Don’t care or Open. MB84VD23280EA-90/MB84VD23280EE-90 Table 1. 2 User Bus Operations (Flash = Word mode; CIOf = VCCf, SRAM = Byte mode; CIOs = VSS) Operation (1), (3) CEf CE1s CE2s OE Full Standby H H Output Disable L H X X L L H H X X L H X X L H X X L WE WP/ UBs DQ7 to DQ0 DQ15 to DQ8 RESET ACC SA LBs (6) (6) (5) X X X X X HIGH-Z HIGH-Z H X H H X X X HIGH-Z HIGH-Z X X X X X HIGH-Z HIGH-Z H X H H X X X HIGH-Z HIGH-Z L H X X X DOUT DOUT H X H L X X X DIN DIN H X Read from Flash (2) L Write to Flash L Read from SRAM H L H L H SA X X DOUT HIGH-Z H X Write to SRAM H L H X L SA X X DIN HIGH-Z H X Temporary Sector Group Unprotection(4) X X X X X X X X X X VID X Flash Hardware Reset X H X X L X X X X X HIGH-Z HIGH-Z L X Boot Block Sector Write Protection X X X X X X X X X X X L Legend: L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels. Notes: 1. Other operations except for indicated this column are inhibited. 2. WE can be VIL if OE is VIL, OE at VIH initiates the write operations. 3. Do not apply CEf = VIL, CE1s = VIL and CE2s = VIH at a time. 4. It is also used for the extended sector group protections. 5. Protect of 2 of 8 Kbytes on both ends of each boot sector. 6. LBS , UBS; Don’t care or Open. 7 MB84VD23280EA-90/MB84VD23280EE-90 Table 1. 3 User Bus Operations (Flash = Byte mode; CIOf = VSS, SRAM = Byte mode; CIOs = VSS) UBs Operation (1), (3) CEf CE1s CE2s DQ15/A–1 OE WE SA LBs (6) (6) Full Standby H H Output Disable L H X X L L H H X X L H X X L H X X L DQ7 to DQ0 WP/ DQ14 to RESET ACC DQ8 (5) X X X X X X HIGH-Z HIGH-Z H X X H H X X X HIGH-Z HIGH-Z X X X X X X HIGH-Z HIGH-Z H X A–1 H H X X X HIGH-Z HIGH-Z A–1 L H X X X DOUT X H X A–1 H L X X X DIN X H X Read from Flash (2) L Write to Flash L Read from SRAM H L H X L H SA X X DOUT HIGH-Z H X Write to SRAM H L H X X L SA X X DIN HIGH-Z H X Temporary Sector Group Unprotection(4) X X X X X X X X X X X VID X Flash Hardware Reset X H X X L X X X X X X HIGH-Z HIGH-Z L X Boot Block Sector Write Protection X X X X X X X X X X X X L Legend: L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels. Notes: 8 1. Other operations except for indicated this column are inhibited. 2. WE can be VIL if OE is VIL, OE at VIH initiates the write operations. 3. Do not apply CEf = VIL, CE1s = VIL and CE2s = VIH at a time. 4. It is also used for the extended sector group protections. 5. Protect of 2 of 8 Kbytes on both ends of each boot sector. 6. LBS , UBS; Don’t care or Open. MB84VD23280EA-90/MB84VD23280EE-90 ■ FLEXIBLE SECTOR-ERASE ARCHITECTURE on FLASH MEMORY • Sixteen 4K words, and one hundred twenty-six 32 K words. • Individual-sector, multiple-sector, or bulk-erase capability. Bank A Bank B SA0 : 8KB (4KW) SA1 : 8KB (4KW) SA2 : 8KB (4KW) SA3 : 8KB (4KW) SA4 : 8KB (4KW) SA5 : 8KB (4KW) SA6 : 8KB (4KW) SA7 : 8KB (4KW) SA8 : 64KB (32KW) SA9 : 64KB (32KW) SA10 : 64KB (32KW) SA11 : 64KB (32KW) SA12 : 64KB (32KW) SA13 : 64KB (32KW) SA14 : 64KB (32KW) SA15 : 64KB (32KW) SA16 : 64KB (32KW) SA17 : 64KB (32KW) SA18 : 64KB (32KW) SA19 : 64KB (32KW) SA20 : 64KB (32KW) SA21 : 64KB (32KW) SA22 : 64KB (32KW) SA23 : 64KB (32KW) SA24 : 64KB (32KW) SA25 : 64KB (32KW) SA26 : 64KB (32KW) SA27 : 64KB (32KW) SA28 : 64KB (32KW) SA29 : 64KB (32KW) SA30 : 64KB (32KW) SA31 : 64KB (32KW) SA32 : 64KB (32KW) SA33 : 64KB (32KW) SA34 : 64KB (32KW) SA35 : 64KB (32KW) SA36 : 64KB (32KW) SA37 : 64KB (32KW) SA38 : 64KB (32KW) SA39 : 64KB (32KW) SA40 : 64KB (32KW) SA41 : 64KB (32KW) SA42 : 64KB (32KW) SA43 : 64KB (32KW) SA44 : 64KB (32KW) SA45 : 64KB (32KW) SA46 : 64KB (32KW) SA47 : 64KB (32KW) SA48 : 64KB (32KW) SA49 : 64KB (32KW) SA50 : 64KB (32KW) SA51 : 64KB (32KW) SA52 : 64KB (32KW) SA53 : 64KB (32KW) SA54 : 64KB (32KW) SA55 : 64KB (32KW) SA56 : 64KB (32KW) SA57 : 64KB (32KW) SA58 : 64KB (32KW) SA59 : 64KB (32KW) SA60 : 64KB (32KW) SA61 : 64KB (32KW) SA62 : 64KB (32KW) SA63 : 64KB (32KW) SA64 : 64KB (32KW) SA65 : 64KB (32KW) SA66 : 64KB (32KW) SA67 : 64KB (32KW) SA68 : 64KB (32KW) SA69 : 64KB (32KW) SA70 : 64KB (32KW) Word Mode Byte Mode 000000h 000000h 002000h 001000h 004000h 002000h 006000h 003000h 008000h 004000h 00A000h 005000h 00C000h 006000h 00E000h 007000h 010000h 008000h 020000h 010000h 030000h 018000h 040000h 020000h 050000h 028000h 060000h 030000h 070000h 038000h 080000h 040000h 090000h 048000h 0A0000h 050000h 0B0000h 058000h 0C0000h 060000h 0D0000h 068000h 0E0000h 070000h 0F0000h 078000h 100000h 080000h 110000h 088000h 120000h 090000h 130000h 098000h 140000h 0A0000h 158000h 0A8000h 160000h 0B0000h 170000h 0B8000h 180000h 0C0000h 190000h 0C8000h 1A0000h 0D0000h 1B0000h 0D8000h 1C0000h 0E0000h 1D0000h 0E8000h 1E0000h 0F0000h 1F0000h 0F8000h 200000h 100000h 210000h 108000h 220000h 110000h 230000h 118000h 240000h 120000h 250000h 128000h 260000h 130000h 270000h 138000h 280000h 140000h 290000h 148000h 2A0000h 150000h 2B0000h 158000h 2C0000h 160000h 2D0000h 168000h 2E0000h 170000h 2F0000h 178000h 300000h 180000h 310000h 188000h 320000h 190000h 330000h 198000h 340000h 1A0000h 350000h 1A8000h 360000h 1B0000h 370000h 1B8000h 380000h 1C0000h 390000h 1C8000h 3A0000h 1D0000h 3B0000h 1D8000h 3C0000h 1E0000h 3D0000h 1E8000h 3E0000h 1F0000h 3F0000h 1F8000h 1FFFFFh 3FFFFFh Bank C Bank D SA71 : 64KB (32KW) SA72 : 64KB (32KW) SA73 : 64KB (32KW) SA74 : 64KB (32KW) SA75 : 64KB (32KW) SA76 : 64KB (32KW) SA77 : 64KB (32KW) SA78 : 64KB (32KW) SA79 : 64KB (32KW) SA80 : 64KB (32KW) SA81 : 64KB (32KW) SA82 : 64KB (32KW) SA83 : 64KB (32KW) SA84 : 64KB (32KW) SA85 : 64KB (32KW) SA86 : 64KB (32KW) SA87 : 64KB (32KW) SA88 : 64KB (32KW) SA89 : 64KB (32KW) SA90 : 64KB (32KW) SA91 : 64KB (32KW) SA92 : 64KB (32KW) SA93 : 64KB (32KW) SA94 : 64KB (32KW) SA95 : 64KB (32KW) SA96 : 64KB (32KW) SA97 : 64KB (32KW) SA98 : 64KB (32KW) SA99 : 64KB (32KW) SA100 : 64KB (32KW) SA101 : 64KB (32KW) SA102 : 64KB (32KW) SA103 : 64KB (32KW) SA104 : 64KB (32KW) SA105 : 64KB (32KW) SA106 : 64KB (32KW) SA107 : 64KB (32KW) SA108 : 64KB (32KW) SA109 : 64KB (32KW) SA110 : 64KB (32KW) SA111 : 64KB (32KW) SA112 : 64KB (32KW) SA113 : 64KB (32KW) SA114 : 64KB (32KW) SA115 : 64KB (32KW) SA116 : 64KB (32KW) SA117 : 64KB (32KW) SA118 : 64KB (32KW) SA119 : 64KB (32KW) SA120 : 64KB (32KW) SA121 : 64KB (32KW) SA122 : 64KB (32KW) SA123 : 64KB (32KW) SA124 : 64KB (32KW) SA125 : 64KB (32KW) SA126 : 64KB (32KW) SA127 : 64KB (32KW) SA128 : 64KB (32KW) SA129 : 64KB (32KW) SA130 : 64KB (32KW) SA131 : 64KB (32KW) SA132 : 64KB (32KW) SA133 : 64KB (32KW) SA134 : 8KB (4KW) SA135 : 8KB (4KW) SA136 : 8KB (4KW) SA137 : 8KB (4KW) SA138 : 8KB (4KW) SA139 : 8KB (4KW) SA140 : 8KB (4KW) SA141 : 8KB (4KW) Word Mode 200000h 208000h 210000h 218000h 220000h 228000h 230000h 238000h 240000h 248000h 250000h 258000h 260000h 268000h 270000h 278000h 280000h 288000h 290000h 298000h 2A0000h 2A8000h 2B0000h 2B8000h 2C0000h 2C8000h 2D0000h 2D8000h 2E0000h 2E8000h 2F0000h 2F8000h 300000h 308000h 310000h 318000h 320000h 328000h 330000h 338000h 340000h 348000h 350000h 358000h 360000h 368000h 370000h 378000h 380000h 388000h 390000h 398000h 3A0000h 3A8000h 3B0000h 3B8000h 3C0000h 3C8000h 3D0000h 3D8000h 3E0000h 3E8000h 3F0000h 3F8000h 3F9000h 3FA000h 3FB000h 3FC000h 3FD000h 3FE000h 3FF000h 3FFFFFh Byte Mode 400000h 410000h 420000h 430000h 440000h 450000h 460000h 470000h 480000h 490000h 4A0000h 4B0000h 4C0000h 4D0000h 4E0000h 4F0000h 500000h 510000h 520000h 530000h 540000h 550000h 560000h 570000h 580000h 590000h 5A0000h 5B0000h 5C0000h 5D0000h 5E0000h 5F0000h 600000h 610000h 620000h 630000h 640000h 650000h 660000h 670000h 680000h 690000h 6A0000h 6B0000h 6C0000h 6D0000h 6E0000h 6F0000h 700000h 710000h 720000h 730000h 740000h 750000h 760000h 770000h 780000h 790000h 7A0000h 7B0000h 7C0000h 7D0000h 7E0000h 7F0000h 7F2000h 7F4000h 7F6000h 7F8000h 7FA000h 7FC000h 7FE000h 7FFFFFh MB84VD23280EA/EE Sector Architecture 9 MB84VD23280EA-90/MB84VD23280EE-90 Table 2 Example of Virtual Banks Combination Bank 1 Bank Splits Volume Combination Bank 2 Sector Size Volume Combination Sector Size Bank B + Bank C + Bank D 8 of 8 Kbyte / 4 K word + 111 of 64 Kbyte / 32 K word 1 8M bit Bank A 8 of 8 Kbyte / 4 K word + 56 Mbit 15 of 64 Kbyte / 32 K word 2 16 Mbit Bank A + Bank D 16 of 8 Kbyte / 4 K word + 48 Mbit 30 of 64 Kbyte / 32 K word Bank B + Bank C 96 of 64 Kbyte / 32 K word 16 of 8 Kbyte / 4 K word + 78 of 64 Kbyte / 32 K word 8 of 8 Kbyte / 4 K word + 63 of 64 Kbyte / 32 K word 3 24 Mbit Bank B 48 of 64 Kbyte / 32 K word 40 Mbit Bank A + Bank C + Bank D 4 32 Mbit Bank A + Bank B 8 of 8 Kbyte / 4 K word + 32 Mbit 63 of 64 Kbyte / 32 K word Bank C + Bank D BankA: Address 000000h to 07FFFFh (Word) , 000000h to 0FFFFFh (Byte) BankB: Address 080000h to 1FFFFFh (Word) , 100000h to 3FFFFFh (Byte) BankC: Address 200000h to 37FFFFh (Word) , 400000h to 6FFFFFh (Byte) BankD: Address 380000h to 3FFFFFh (Word) , 700000h to 7FFFFFh (Byte) Table 3 Sector Address Tables Sector Address Bank Bank A Sector Bank Address A21 A20 A19 A18 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 Address Range A17 A16 A15 A14 A13 A12 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 0 0 0 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 0 0 0 1 1 1 1 X X X X X X X X X X X X X X X 0 0 1 1 0 0 1 1 X X X X X X X X X X X X X X X 0 1 0 1 0 1 0 1 X X X X X X X X X X X X X X X Byte Mode Word Mode 000000h to 001FFFh 002000h to 003FFFh 004000h to 005FFFh 006000h to 007FFFh 008000h to 009FFFh 00A000h to 00BFFFh 00C000h to 00DFFFh 00E000h to 00FFFFh 010000h to 01FFFFh 020000h to 02FFFFh 030000h to 03FFFFh 040000h to 04FFFFh 050000h to 05FFFFh 060000h to 06FFFFh 070000h to 07FFFFh 080000h to 08FFFFh 090000h to 09FFFFh 0A0000h to 0AFFFFh 0B0000h to 0BFFFFh 0C0000h to 0CFFFFh 0D0000h to 0DFFFFh 0E0000h to 0EFFFFh 0F0000h to 0FFFFFh 000000h to 000FFFh 001000h to 001FFFh 002000h to 002FFFh 003000h to 003FFFh 004000h to 004FFFh 005000h to 005FFFh 006000h to 006FFFh 007000h to 007FFFh 008000h to 00FFFFh 010000h to 017FFFh 018000h to 01FFFFh 020000h to 027FFFh 028000h to 02FFFFh 030000h to 037FFFh 038000h to 03FFFFh 040000h to 047FFFh 048000h to 04FFFFh 050000h to 057FFFh 058000h to 05FFFFh 060000h to 067FFFh 068000h to 06FFFFh 070000h to 077FFFh 078000h to 07FFFFh (Continued) 10 MB84VD23280EA-90/MB84VD23280EE-90 (Continued) Sector Address Bank Bank B Sector Bank Address A21 A20 A19 A18 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 Address Range A17 A16 A15 A14 A13 A12 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X Byte Mode Word Mode 100000h to 10FFFFh 110000h to 11FFFFh 120000h to 12FFFFh 130000h to 13FFFFh 140000h to 14FFFFh 150000h to 15FFFFh 160000h to 16FFFFh 170000h to 17FFFFh 180000h to 18FFFFh 190000h to 19FFFFh 1A0000h to 1AFFFFh 1B0000h to 1BFFFFh 1C0000h to 1CFFFFh 1D0000h to 1DFFFFh 1E0000h to 1EFFFFh 1F0000h to 1FFFFFh 200000h to 20FFFFh 210000h to 21FFFFh 220000h to 22FFFFh 230000h to 23FFFFh 240000h to 24FFFFh 250000h to 25FFFFh 260000h to 26FFFFh 270000h to 27FFFFh 280000h to 28FFFFh 290000h to 29FFFFh 2A0000h to 2AFFFFh 2B0000h to 2BFFFFh 2C0000h to 2CFFFFh 2D0000h to 2DFFFFh 2E0000h to 2EFFFFh 2F0000h to 2FFFFFh 300000h to 30FFFFh 310000h to 31FFFFh 320000h to 32FFFFh 330000h to 33FFFFh 340000h to 34FFFFh 350000h to 35FFFFh 360000h to 36FFFFh 370000h to 37FFFFh 380000h to 38FFFFh 390000h to 39FFFFh 3A0000h to 3AFFFFh 3B0000h to 3BFFFFh 3C0000h to 3CFFFFh 3D0000h to 3DFFFFh 3E0000h to 3EFFFFh 3F0000h to 3FFFFFh 080000h to 087FFFh 088000h to 08FFFFh 090000h to 097FFFh 098000h to 09FFFFh 0A0000h to 0A7FFFh 0A8000h to 0AFFFFh 0B0000h to 0B7FFFh 0B8000h to 0BFFFFh 0C0000h to 0C7FFFh 0C8000h to 0CFFFFh 0D0000h to 0D7FFFh 0D8000h to 0DFFFFh 0E0000h to 0E7FFFh 0E8000h to 0EFFFFh 0F0000h to 0F7FFFh 0F8000h to 0FFFFFh 100000h to 107FFFh 108000h to 10FFFFh 110000h to 117FFFh 118000h to 11FFFFh 120000h to 127FFFh 128000h to 12FFFFh 130000h to 137FFFh 138000h to 13FFFFh 140000h to 147FFFh 148000h to 14FFFFh 150000h to 157FFFh 158000h to 15FFFFh 160000h to 167FFFh 168000h to 16FFFFh 170000h to 177FFFh 178000h to 17FFFFh 180000h to 187FFFh 188000h to 18FFFFh 190000h to 197FFFh 198000h to 19FFFFh 1A0000h to 1A7FFFh 1A8000h to 1AFFFFh 1B0000h to 1B7FFFh 1B8000h to 1BFFFFh 1C0000h to 1C7FFFh 1C8000h to 1CFFFFh 1D0000h to 1D7FFFh 1D8000h to 1DFFFFh 1E0000h to 1E7FFFh 1E8000h to 1EFFFFh 1F0000h to 1F7FFFh 1F8000h to 1FFFFFh (Continued) 11 MB84VD23280EA-90/MB84VD23280EE-90 (Continued) Sector Address Bank Bank C Sector Bank Address A21 A20 A19 A18 SA71 SA72 SA73 SA74 SA75 SA76 SA77 SA78 SA79 SA80 SA81 SA82 SA83 SA84 SA85 SA86 SA87 SA88 SA89 SA90 SA91 SA92 SA93 SA94 SA95 SA96 SA97 SA98 SA99 SA100 SA101 SA102 SA103 SA104 SA105 SA106 SA107 SA108 SA109 SA110 SA111 SA112 SA113 SA114 SA115 SA116 SA117 SA118 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 Address Range A17 A16 A15 A14 A13 A12 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X Byte Mode Word Mode 400000h to 40FFFFh 410000h to 41FFFFh 420000h to 42FFFFh 430000h to 43FFFFh 440000h to 44FFFFh 450000h to 45FFFFh 460000h to 46FFFFh 470000h to 47FFFFh 480000h to 48FFFFh 490000h to 49FFFFh 4A0000h to 4AFFFFh 4B0000h to 4BFFFFh 4C0000h to 4CFFFFh 4D0000h to 4DFFFFh 4E0000h to 4EFFFFh 4F0000h to 4FFFFFh 500000h to 50FFFFh 510000h to 51FFFFh 520000h to 52FFFFh 530000h to 53FFFFh 540000h to 54FFFFh 550000h to 55FFFFh 560000h to 56FFFFh 570000h to 57FFFFh 580000h to 58FFFFh 590000h to 59FFFFh 5A0000h to 5AFFFFh 5B0000h to 5BFFFFh 5C0000h to 5CFFFFh 5D0000h to 5DFFFFh 5E0000h to 5EFFFFh 5F0000h to 5FFFFFh 600000h to 60FFFFh 610000h to 61FFFFh 620000h to 62FFFFh 630000h to 63FFFFh 640000h to 64FFFFh 650000h to 65FFFFh 660000h to 66FFFFh 670000h to 67FFFFh 680000h to 68FFFFh 690000h to 69FFFFh 6A0000h to 6AFFFFh 6B0000h to 6BFFFFh 6C0000h to 6CFFFFh 6D0000h to 6DFFFFh 6E0000h to 6EFFFFh 6F0000h to 6FFFFFh 200000h to 207FFFh 208000h to 20FFFFh 210000h to 217FFFh 218000h to 21FFFFh 220000h to 227FFFh 228000h to 22FFFFh 230000h to 237FFFh 238000h to 23FFFFh 240000h to 247FFFh 248000h to 24FFFFh 250000h to 257FFFh 258000h to 25FFFFh 260000h to 267FFFh 268000h to 26FFFFh 270000h to 277FFFh 278000h to 27FFFFh 280000h to 287FFFh 288000h to 28FFFFh 290000h to 297FFFh 298000h to 29FFFFh 2A0000h to 2A7FFFh 2A8000h to 2AFFFFh 2B0000h to 2B7FFFh 2B8000h to 2BFFFFh 2C0000h to 2C7FFFh 2C8000h to 2CFFFFh 2D0000h to 2D7FFFh 2D8000h to 2DFFFFh 2E0000h to 2E7FFFh 2E8000h to 2EFFFFh 2F0000h to 2F7FFFh 2F8000h to 2FFFFFh 300000h to 307FFFh 308000h to 30FFFFh 310000h to 317FFFh 318000h to 31FFFFh 320000h to 327FFFh 328000h to 32FFFFh 330000h to 337FFFh 338000h to 33FFFFh 340000h to 347FFFh 348000h to 34FFFFh 350000h to 357FFFh 358000h to 35FFFFh 360000h to 367FFFh 368000h to 36FFFFh 370000h to 377FFFh 378000h to 37FFFFh (Continued) 12 MB84VD23280EA-90/MB84VD23280EE-90 (Continued) Sector Address Bank Bank D Sector Bank Address A21 A20 A19 A18 SA119 SA120 SA121 SA122 SA123 SA124 SA125 SA126 SA127 SA128 SA129 SA130 SA131 SA132 SA133 SA134 SA135 SA136 SA137 SA138 SA139 SA140 SA141 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Address Range A17 A16 A15 A14 A13 A12 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 1 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1 1 1 1 1 X X X X X X X X X X X X X X X 0 0 0 0 1 1 1 1 X X X X X X X X X X X X X X X 0 0 1 1 0 0 1 1 X X X X X X X X X X X X X X X 0 1 0 1 0 1 0 1 Byte Mode Word Mode 700000h to 70FFFFh 710000h to 71FFFFh 720000h to 72FFFFh 730000h to 73FFFFh 740000h to 74FFFFh 750000h to 75FFFFh 760000h to 76FFFFh 770000h to 77FFFFh 780000h to 78FFFFh 790000h to 79FFFFh 7A0000h to 7AFFFFh 7B0000h to 7BFFFFh 7C0000h to 7CFFFFh 7D0000h to 7DFFFFh 7E0000h to 7EFFFFh 7F0000h to 7F1FFFh 7F2000h to 7F3FFFh 7F4000h to 7F5FFFh 7F6000h to 7F7FFFh 7F8000h to 7F9FFFh 7FA000h to 7FBFFFh 7FC000h to 7FDFFFh 7FE000h to 7FFFFFh 380000h to 387FFFh 388000h to 38FFFFh 390000h to 397FFFh 398000h to 39FFFFh 3A0000h to 3A7FFFh 3A8000h to 3AFFFFh 3B0000h to 3B7FFFh 3B8000h to 3BFFFFh 3C0000h to 3C7FFFh 3C8000h to 3CFFFFh 3D0000h to 3D7FFFh 3D8000h to 3DFFFFh 3E0000h to 3E7FFFh 3E8000h to 3EFFFFh 3F0000h to 3F7FFFh 3F8000h to 3F8FFFh 3F9000h to 3F9FFFh 3FA000h to 3FAFFFh 3FB000h to 3FBFFFh 3FC000h to 3FCFFFh 3FD000h to 3FDFFFh 3FE000h to 3FEFFFh 3FF000h to 3FFFFFh 13 MB84VD23280EA-90/MB84VD23280EE-90 Table 4 Sector Group Addresses (MB84VD23280EA/EE) 14 Sector Group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 A21 0 0 0 0 0 0 0 0 A20 0 0 0 0 0 0 0 0 A19 0 0 0 0 0 0 0 0 A18 0 0 0 0 0 0 0 0 A17 0 0 0 0 0 0 0 0 SGA8 0 0 0 0 0 SGA9 SGA10 SGA11 SGA12 SGA13 SGA14 SGA15 SGA16 SGA17 SGA18 SGA19 SGA20 SGA21 SGA22 SGA23 SGA24 SGA25 SGA26 SGA27 SGA28 SGA29 SGA30 SGA31 SGA32 SGA33 SGA34 SGA35 SGA36 SGA37 SGA38 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 SGA39 1 1 1 1 1 SGA40 SGA41 SGA42 SGA43 SGA44 SGA45 SGA46 SGA47 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 A16 0 0 0 0 0 0 0 0 0 0 1 A15 0 0 0 0 0 0 0 0 0 1 0 A14 0 0 0 0 1 1 1 1 A13 0 0 1 1 0 0 1 1 A12 0 1 0 1 0 1 0 1 Sectors SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 X X X SA8 to SA10 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X SA11 to SA14 SA15 to SA18 SA19 to SA22 SA23 to SA26 SA27 to SA30 SA31 to SA34 SA35 to SA38 SA39 to SA42 SA43 to SA46 SA47 to SA50 SA51 to SA54 SA55 to SA58 SA59 to SA62 SA63 to SA66 SA67 to SA70 SA71 to SA74 SA75 to SA78 SA79 to SA82 SA83 to SA86 SA87 to SA90 SA91 to SA94 SA95 to SA98 SA99 to SA102 SA103 to SA106 SA107 to SA110 SA111 to SA114 SA115 to SA118 SA119 to SA122 SA123 to SA126 SA127 to SA130 0 0 1 1 1 1 1 1 1 1 1 0 1 0 1 1 1 1 1 1 1 1 X X X SA131 to SA133 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 SA134 SA135 SA136 SA137 SA138 SA139 SA140 SA141 MB84VD23280EA-90/MB84VD23280EE-90 Table 5 Flash Memory Autoselect Codes A21 to A12 Type Manufacture’s Code Device Code Byte Word Byte Extended Device Code *4 Word Byte Word Sector Group Protection A6 A3 A2 A1 A0 A-1*1 Code (HEX) 3 VIL VIL VIL VIL VIL VIL 04h BA*3 VIL VIL VIL VIL VIH VIL 7Eh X 227Eh BA*3 VIL VIH VIH VIH VIL VIL 02h X 2202h BA*3 VIL VIH VIH VIH VIH VIL 01h X 2201h Sector Group Addresses VIL VIL VIL VIH VIL VIL 01h*2 BA* *1 : A-1 is for Byte mode. *2 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. *3 : When VID is applied, both Bank 1 and Bank 2 become Autoselect mode, which leads to the simultaneous operation unable to be executed. Consequently, specifying the bank address is not demanded. However, the bank address needs to be indicated when Autoselect mode is read out at command mode; because then it becomes OK to activate simultaneous operation. *4 : At WORD mode, a read cycle at address (BA) 01h (at BYTE mode, (BA) 02h) outputs device code. When 227Eh (at BYTE mode, 7Eh) was output, this indicates that there will require two additional codes, called Extended Device Codes. Therefore the system may continue reading out these Extended Device Codes at the address of (BA) 0Eh (at BYTE mode, (BA) 1Ch) , as well as at (BA) 0Fh (at BYTE mode, (BA) 1Eh) . 15 MB84VD23280EA-90/MB84VD23280EE-90 Table 6 Flash Memory Command Definitions Command Sequence Read/Reset Read/Reset Word Byte Word Byte Bus Write Cycles Req’d 1 3 Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data XXXh 555h AAAh 3 Autoselect Byte AAh 4 — 2AAh 555h AAh 555h AAAh — 55h 2AAh AAAh Byte Word F0h 555h Word Program Bus First Bus Second Bus Third Bus Fourth Fifth Bus Sixth Bus Read/Write Write Cycle Write Cycle Write Cycle Write Cycle Write Cycle Cycle 55h 555h AAh 2AAh 555h 55h — 555h AAAh (BA) 555h (BA) AAAh 555h AAAh — — — — — — — F0h RA RD — — — — 90h — — — — — — A0h PA PD — — — — Program Suspend 1 BA B0h — — — — — — — — — — Program Resume 1 BA 30h — — — — — — — — — — Chip Erase Sector Erase Word Byte Word Byte 6 6 555h AAAh 555h AAAh AAh AAh 2AAh 555h 2AAh 555h 55h 55h 555h AAAh 555h AAAh 80h 80h 555h AAAh 555h AAAh AAh AAh 2AAh 555h 2AAh 555h 55h 555h AAAh 10h 55h SA 30h Erase Suspend 1 BA B0h — — — — — — — — — — Erase Resume 1 BA 30h — — — — — — — — — — 4 XXXh 60h SPA 60h SPA 40h SPA SD — — — — 20h — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — 88h — — — — — — PA PD — — — — XXXh 00h — — — — Extended Sector Group Protection *2 Set to Fast Mode Word Byte Word Byte Fast Program *1 Word Reset from Fast Mode *1 Word Byte Byte 3 2 2 Word 1 Query Byte Hi-ROM Entry Hi-ROM Program *3 Hi-ROM Exit *3 Word Byte Word Byte 3 4 555h AAAh XXXh XXXh BA BA (BA) 55h (BA) AAh 555h AAAh 555h AAAh A0h 90h 98h AAh AAh 555h Word 4 Byte AAh 2AAh 555h PA XXXh PD *4 XXXh F0h — — 2AAh 555h 2AAh 555h 55h 55h 55h 555h 555h AAAh 555h AAAh 555h AAAh A0h (HRA) (HRBA) 2AAh AAh AAAh 55h 555h (HRBA) 90h AAAh (Continued) 16 MB84VD23280EA-90/MB84VD23280EE-90 (Continued) *1: This command is valid while Fast Mode. *2: This command is valid while RESET = VID. *3: This command is valid while Hi-ROM mode. *4: The data “00h” is also acceptable. Notes: 1. Address bits A21 to A11 = X = “H” or “L” for all address commands except or Program Address (PA), Sector Address (SA), and Bank Address (BA), and Sector Group Address (SPA). 2. Bus operations are defined in Tables 3 and 4. 3. RA =Address of the memory location to be read PA = Address of the memory location to be programmed Addresses are latched on the falling edge of the write pulse. SA = Address of the sector to be erased. The combination of A21, A20, A19, A18, A17, A16, A15, A14, A13, and A12 will uniquely select any sector. BA = Bank Address (A21, A20, A19) 4. RD = Data read from location RA during read operation. PD = Data to be programmed at location PA. Data is latched on the falling edge of write pulse. 5. SPA =Sector group address to be protected. Set sector group address and (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0). SD = Sector group protection verify data. Output 01h at protected sector group addresses and output 00h at unprotected sector group addresses. 6. HRA = Address of the Hi-ROM area Word Mode:000000h to 00007Fh Byte Mode:000000h to 0000FFh 7. HRBA = Bank Address of the Hi-ROM area (A21 = A20 = A19 = VIL) 8. The system should generate the following address patterns: Word Mode: 555h or 2AAh to addresses A10 to A0 Byte Mode: AAAh or 555h to addresses A10 to A0, and A-1 9. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. 17 MB84VD23280EA-90/MB84VD23280EE-90 ■ ABSOLUTE MAXIMUM RATINGS Parameter Rating Symbol Unit Min. Max. Tstg –55 +125 °C Ta –25 +85 °C VIN, VOUT –0.3 VCCf +0.3 V VCCs +0.3 V VCCf, VCCs –0.3 +4.0 V A9 and OE * VIN –0.3 + 13.0 V RESET *2 VIN –0.5 + 13.0 V WP/ACC *3 VIN –0.5 +10.5 V Storage Temperature Ambient Temperature with Power Applied Voltage with Respect to Ground All pins except A9,OE,RESET,WP/ACC *1 VCCf/VCCs Supply * 1 2 *1 Minimum DC voltage on input or I/O pins is –0.3 V. During voltage transitions, input or I/O pins may undershoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCCf + 0.3 V or VCCs + 0.3 V. During voltage transitions, input or I/O pins may overshoot to VCCf + 2.0 V or VCCs + 2.0 V for periods of up to 20 ns. *2: Minimum DC input voltage on A9 and OE pin is –0.3 V. Minimum DC input voltage on RESET pin is –0.5 V. During voltage transitions, A9, OE, and RESET pins may undershoot VSS to –2.0 V for periods of up to 20 ns. Voltage difference between input and supply voltage (VIN-VCCf or VCCs) does not exceed +9.0 V. Maximum DC input voltage on A9, OE, and RESET pins is +13.0 V which may overshoot to +14.0 V for periods of up to 20 ns. *3: Minimum DC input voltage on WP/ACC pin is –0.5 V. During voltage transitions, WP/ACC pin may undershoot Vss to –2.0 V for periods of up to 20 ns. Maximum DC input voltage on WP/ACC pin is +10.5 V which may overshoot to +12.0 V for periods of up to 20 ns, when VCCf is applied. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Ambient Temperature VCCf/VCCs Supply Voltages Symbol Value Unit Min. Max. Ta –25 +85 °C VCCf, VCCs +2.7 +3.3 V Note: Operating ranges define those limits between which the functionality of the device is guaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 18 MB84VD23280EA-90/MB84VD23280EE-90 ■ ELECTRICAL CHARACTERRISTICS 1. DC Characteristics Parameter Value Conditions Symbol Min. Typ. Max. Unit Input Leakage Current ILI VIN = VSS to VCCf, VCCs –1.0 — +1.0 µA Output Leakage Current ILO VOUT = VSS to VCCf, VCCs –1.0 — +1.0 µA RESET Inputs Leakage Current ILIT VCCf = VCCf Max., VCCs = VCCs Max., RESET = 12.5 V — — 35 µA ACC Input Leakage Current ILIA VCCf = VCCf Max., VCCs = VCCs Max., WP/ACC = VACC Max. — — 20 mA tCYCLE = 5 MHz Byte — — 16 tCYCLE = 5 MHz Word — — 18 tCYCLE = 1 MHz Byte — — 7 tCYCLE = 1 MHz Word — — 7 — — 35 Byte — — 51 Word — — 53 Byte — — 51 Word — — 53 — — 35 mA tCYCLE =10 MHz — — 50 mA tCYCLE = 10 MHz — — 50 mA tCYCLE = 1 MHz — — 10 mA Flash VCC Active Current (Read) *1 ICC1f CEf = VIL, OE = VIH mA mA Flash VCC Active Current (Program/Erase) *2 ICC2f CEf = VIL, OE = VIH Flash VCC Active Current (Read-While-Program) *5 ICC3f CEf = VIL, OE = VIH Flash VCC Active Current (Read-While-Erase) *5 ICC4f CEf = VIL, OE = VIH Flash VCC Active Current (Erase-Suspend-Program) ICC5f CEf = VIL, OE = VIH SRAM VCC Active Current ICC1s VCCs = VCC Max., CE1s = VIL, CE2s = VIH SRAM VCC Active Current ICC2s CE1s = 0.2 V, CE2s = VCCs – 0.2 V Flash VCC Standby Current ISB1f VCCf = VCCf Max., CEf = VCCf ± 0.3 V RESET = VCCf ± 0.3 V, WP/ACC = VCCf± 0.3 V — — 5 µA Flash VCC Standby Current (RESET) ISB2f VCCf = VCCf Max., RESET = VSS ± 0.3 V, WP/ACC = VCCf± 0.3 V — — 5 µA Flash VCC Current (Automatic Sleep Mode) *3 ISB3f VCCf = VCCf Max., CEf = VSS ± 0.3 V RESET = VCCf ± 0.3 V, WP/ACC = VCCf± 0.3 V, VIN = VCCf± 0.3 V or VSS ± 0.3 V — — 5 µA SRAM VCC Standby Current ISB1s CE1s > VCCs – 0.2 V, CE2s > VCCs – 0.2 V — — 25 µA SRAM VCC Standby Current ISB2s CE2s < 0.2V — — 25 µA mA mA mA (Continued) 19 MB84VD23280EA-90/MB84VD23280EE-90 (Continued) Symbol Conditions Input Low Level VIL Input High Level Voltage for Sector Protection, and Temporary Sector Unprotection (RESET) *4 Parameter Value Unit Min. Typ. Max. — –0.3 — 0.5 VIH — 2.4 — VCC+0.3 * VID — 11.5 — 12.5 V Voltage for Program Acceleration (WP/ACC) *4 VACC — 8.5 9.0 9.5 V Output Low Voltage Level VOL Flash — — 0.45 V VCCs = VCCs Min., IOL=1.0 mA SRAM — — 0.4 V VCCf = VCCf Min., IOH=–0.1 mA Flash VCCf– 0.4 — — V 2.2 — — V 2.3 — 2.5 V Output High Voltage Level VOH VCCf = VCCf Min., IOL=4.0 mA VCCs = VCCs Min., IOH=–0.5 mA Flash Low VCCf Lock-Out Voltage VLKO SRAM — V 6 *1: The ICC current listed includes both the DC operating current and the frequency dependent component. *2: ICC active while Embedded Algorithm (program or erase) is in progress. *3: Automatic sleep mode enables the low power mode when address remains stable for 150 ns. *4: Applicable for only VCCf applying. *5: Embedded Alogorithm (program or erase) is in progress. (@5 MHz) *6: VCC indicates lower of VCCf or VCCs. 20 V MB84VD23280EA-90/MB84VD23280EE-90 2. AC Characteristics • CE Timing Parameter Symbol JEDEC Standard CE Recover Time — tCCR CE Hold Time — tCHOLD Condition Value Unit Min. Max. — 0 — ns — 3 — ns • Timing Diagram for alternating SRAM to Flash CEf tCCR tCCR CE1s WE tCHOLD tCCR tCHOLD tCCR CE2s 21 MB84VD23280EA-90/MB84VD23280EE-90 • Read Only Operations Characteristics (Flash) Symbol Parameter JEDEC Standard Value (Note) Min. Max. Unit Read Cycle Time tAVAV tRC — 90 — ns Address to Output Delay tAVQV tACC CEf = VIL OE = VIL — 90 ns Chip Enable to Output Delay tELQV tCEf OE = VIL — 90 ns Output Enable to Output Delay tGLQV tOE — — 35 ns Chip Enable to Output High-Z tEHQZ tDF — — 30 ns Output Enable to Output High-Z tGHQZ tDF — — 30 ns Output Hold Time From Addresses, CEf or OE, Whichever Occurs First tAXQX tOH — 0 — ns — tREADY — — 20 µs RESET Pin Low to Read Mode Note: Test Conditions– Output Load:1 TTL gate and 30 pF Input rise and fall times: 5 ns Input pulse levels: 0.0 V to VCCf Timing measurement reference level Input: 0.5×VCCf Output: 0.5×VCCf 22 Condition MB84VD23280EA-90/MB84VD23280EE-90 • Read Cycle (Flash) tRC Addresses Stable Address tACC CEf tOE tDF OE tOEH WE tCEf HIGH-Z DQ HIGH-Z Output Valid tRC Address Addresses Stable tACC CEf tRH tRP tRH tCEf RESET tOH DQ HIGH-Z Output Valid 23 MB84VD23280EA-90/MB84VD23280EE-90 • Erase/Program Operations (Flash) Parameter Symbol Value Unit JEDEC Standard Min. Typ. Max. Write Cycle Time tAVAV tWC 90 — — ns Address Setup Time (WE to Addr.) tAVWL tAS 0 — — ns — tASO 15 — — ns tWLAX tAH 45 — — ns — tAHT 0 — — ns Address Setup Time to CEf Low During Toggle Bit Polling Address Hold Time (WE to Addr.) Address Hold Time from CEf or OE High During Toggle Bit Polling Data Setup Time tDVWH tDS 35 — — ns Data Hold Time tWHDX tDH 0 — — ns — tOEH — Output Enable Hold Time Read Toggle and Data Polling CEf High During Toggle Bit Polling OE High During Toggle Bit Polling 0 — — ns 10 — — ns tCEPH 20 — — ns — tOEPH 20 — — ns Read Recover Time Before Write (OE to CEf) tGHEL tGHEL 0 — — ns Read Recover Time Before Write (OE to WE) tGHWL tGHWL 0 — — ns WE Setup Time (CEf to WE) tWLEL tWS 0 — — ns CEf Setup Time (WE to CEf) tELWL tCS 0 — — ns WE Hold Time (CEf to WE) tEHWH tWH 0 — — ns CEf Hold Time (WE to CEf) tWHEH tCH 0 — — ns Write Pulse Width tWLWH tWP 35 — — ns CEf Pulse Width tELEH tCP 35 — — ns Write Pulse Width High tWHWL tWPH 30 — — ns CEf Pulse Width High Word Programming Operation tEHEL tCPH 30 — — ns tWHWH1 tWHWH1 — 16 — µs tWHWH2 tWHWH2 — 1 — s VCCf Setup Time — tVCS 50 — — µs Voltage Transition Time *2 — tVLHT 4 — — µs Rise Time to VID *2 — tVIDR 500 — — ns Rise Time to VACC — tVACCR 500 — — ns Recover Time from RY/BY — tRB 0 — — ns RESET Pulse Width — tRP 500 — — ns Delay Time from Embedded Output Enable — tEOE — — 90 ns Sector Erase Operation * 1 RESET High Level Period Before Read — tRH 200 — — ns Program/Erase Valid to RY/BY Delay — tBUSY — — 90 ns Erase Time-out Time *3 — tTOW 50 — — µs — tSPD — — 20 µs Erase Suspend Transition Time * 4 *1: This does not include the preprogramming time. *2: This timing is for Sector group Protection Operation. *3: The time between writes must be less than “tTOW” otherwise that command will not be accepted and erasure will start. A time-out or “tTOW” from the rising edge of last CEf or WE whichever happens first will initiate the execution of the Sector Erase command(s). *4: When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum of “tSPD” to suspend the erase operation. 24 MB84VD23280EA-90/MB84VD23280EE-90 • Write Cycle (WE control) (Flash) 3rd Bus Cycle Data Polling 555h Address tWC PA tAS PA tRC tAH CEf tCH tCS tCEf OE tGHWL tWP tOE tWHWH1 tWPH WE tOH tDS tDH DQ Notes: 1. 2. 3. 4. 5. 6. A0h PD DQ7 DOUT DOUT PA is address of the memory location to be programmed. PD is data to be programmed at byte address. DQ7 is the output of the complement of the data written to the device. DOUT is the output of the data written to the device. Figure indicates last two bus cycles out of four bus cycle sequence. These waveforms are for the ×16 mode. (The addresses differ from ×8 mode.) 25 MB84VD23280EA-90/MB84VD23280EE-90 • Write Cycle (CEf control) (Flash) 3rd Bus Cycle Address Data Polling PA 555h tWC tAS PA tAH WE tWS tWH OE tGHEL tCP tWHWH1 tCPH CEf tDS tDH DQ Notes: 1. 2. 3. 4. 5. 6. 26 A0h PD DQ7 DOUT PA is address of the memory location to be programmed. PD is data to be programmed at byte address. DQ7 is the output of the complement of the data written to the device. DOUT is the output of the data written to the device. Figure indicates last two bus cycles out of four bus cycle sequence. These waveforms are for the ×16 mode. (The addresses differ from ×8 mode.) MB84VD23280EA-90/MB84VD23280EE-90 • AC Waveforms Chip/Sector Erase Operations (Flash) 2AAh 555h Address tWC tAS 555h SA* 2AAh 555h tAH CEf tCS tCH OE tGHWL tWP tWPH WE tDS tDH AAh DQ 30h for Sector Erase 55h 80h AAh 55h 10h/ 30h tVCS VCCf *: SA is the sector address for Sector Erase. Addresses = 555h for Chip Erase. Note: These waveforms are for the ×16 mode. (The addresses differ from ×8 mode.) 27 MB84VD23280EA-90/MB84VD23280EE-90 • AC Waveforms for Data Polling during Embedded Algorithm Operations (Flash) CEf tCH tDF tOE OE tOEH WE tCEf * DQ7 DQ7 = Valid Data DQ7 Data In High-Z tWHWH1 or tWHWH2 DQ6 to DQ0 DQ6 to DQ0 = Output Flag Data In tBUSY tEOE RY/BY *: DQ7 = Valid Data (The device has completed the Embedded operation.) 28 DQ6 to DQ0 Valid Data High-Z MB84VD23280EA-90/MB84VD23280EE-90 • AC Waveforms for Toggle Bit during Embedded Algorithm Operations (Flash) Address tAHT tASO tAHT tAS CEf tCEPH WE tOEH tOEH tOEPH OE tDH DQ6/DQ2 Data tOE Toggle Data tCEf Toggle Data * Toggle Data Stop Toggling Output Valid tBUSY RY/BY *: DQ6 stops toggling (The device has completed the Embedded operation). 29 MB84VD23280EA-90/MB84VD23280EE-90 • Back-to-back Read/Write Timing Diagram (Flash) Address Read Command Read Command Read Read tRC tWC tRC tWC tRC tRC BA1 BA2 (555h) BA1 BA2 (PA) BA1 BA2 (PA) tAS tACC tAH tAS tAHT tCEf CE tOE tCEPH OE tGHWL tDF tOEH tWP WE tDS DQ Valid Output tDH Valid Intput (A0h) tDF Valid Output Valid Intput (PD) Valid Output Status Note: This is an example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1: Address of Bank 1. BA2: Address of Bank 2. 30 MB84VD23280EA-90/MB84VD23280EE-90 • RY/BY Timing Diagram during Write/Erase Operations (Flash) CEf The rising edge of the last write pulse WE Entire programming or erase operations RY/BY tBUSY • RESET, RY/BY Timing Diagram (Flash) WE RESET tRP tRB RY/BY tREADY 31 MB84VD23280EA-90/MB84VD23280EE-90 • Temporary Sector Unprotection (Flash) VCCf tVIDR tVCS tVLHT VID 3V VIH RESET CEf WE tVLHT tVLHT Program or Erase Command Sequence RY/BY Unprotection Period • Acceleration Mode Timing Diagram (Flash) VCCf tVACCR tVCS tVLHT VACC VCC WP/ACC CEf WE tVLHT tVLHT RY/BY Acceleration Mode Period 32 MB84VD23280EA-90/MB84VD23280EE-90 • Extended Sector Group Protection (Flash) VCCf tVCS RESET tVLHT tVIDR tWC Address tWC SPAX SPAX SPAY A6, A3, A2, A0 A1 CEf OE TIME-OUT tWP WE Data 60h 60h 40h 01h 60h tOE SPAX: Sector Group Address to be protected SPAY : Next Group Sector Address to be protected TIME-OUT : Time-Out window = 250 µs (Min.) 33 MB84VD23280EA-90/MB84VD23280EE-90 • Read Cycle (SRAM) Parameter 34 Symbol Value Min. Max. Unit Read Cycle Time tRC 70 — ns Address Access Time tAA — 70 ns Chip Enable (CE1s) Access Time tCO1 — 70 ns Chip Enable (CE2s) Access Time tCO2 — 70 ns Output Enable Access Time tOE — 35 ns LBs, UBs to Output Valid tBA — 70 ns Chip Enable (CE1s Low and CE2s High) to Output Active tCOE 5 — ns Output Enable Low to Output Active tOEE 0 — ns UBs, LBs Enable Low to Output Active tBE 0 — ns Chip Enable (CE1s High or CE2s Low) to Output High-Z tOD — 25 ns Output Enable High to Output High-Z tODO — 25 ns UBs, LBs Output Enable to Output High-Z tBD — 25 ns Output Data Hold Time tOH 10 — ns MB84VD23280EA-90/MB84VD23280EE-90 • Read Cycle (SRAM) tRC Address tAA tOH tCO1 CE1s tCOE tOD tCO2 CE2s tOD tOE OE tODO tOEE LBs, UBs tBD tBA tBE tCOE DQ VALID DATA OUT Note: WE remains HIGH for the read cycle. 35 MB84VD23280EA-90/MB84VD23280EE-90 • Write Cycle (SRAM) Parameter 36 Symbol Value Min. Max. Unit Write Cycle Time tWC 70 — ns Write Pulse Width tWP 55 — ns Chip Enable to End of Write tCW 60 — ns Address valid to End of Write tAW 60 — ns UBs, LBs to End of Write tBW 60 — ns Address Setup Time tAS 0 — ns Write Recovery Time tWR 0 — ns WE Low to Output High-Z tODW — 25 ns WE High to Output Active tOEW 0 — ns Data Setup Time tDS 30 — ns Data Hold Time tDH 0 — ns MB84VD23280EA-90/MB84VD23280EE-90 • Write Cycle (Note 3) (WE control) (SRAM) tWC Address tAS tWP tWR WE tAW tCW CE1s CE2s tCW tBW LBs, UBs tOEW tODW DOUT Note 1 Note 2 tDS DIN Note 4 tDH VALID DATA IN Note 4 Notes: 1. If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the output will remain at high impedance. 2. If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the output will remain at high impedance. 3. If OE is HIGH during the write cycle, the outputs will remain at high impedance. 4. Because I/O signals may be in the output state at this Time, input signals of reverse polarity must not be applied. 37 MB84VD23280EA-90/MB84VD23280EE-90 • Write Cycle (Note 1) (CE1s control) (SRAM) tWC Address tAS tWP tWR WE tAW tCW CE1s CE2s tCW tBW LBs, UBs tBE tCOE tODW DOUT tDS DIN Note 2 tDH VALID DATA IN Notes: 1. If OE is HIGH during the write cycle, the outputs will remain at high impedance. 2. Because I/O signals may be in the output state at this Time, input signals of reverse polarity must not be applied. 38 MB84VD23280EA-90/MB84VD23280EE-90 • Write Cycle (Note 1) (CE2s Control) (SRAM) tWC Address tAS tWP tWR WE tCW CE1s tAW CE2s tCW tBW LBs, UBs tBE tCOE tODW DOUT tDS DIN Note 2 tDH VALID DATA IN Notes: 1. If OE is HIGH during the write cycle, the outputs will remain at high impedance. 2. Because I/O signals may be in the output state at this Time, input signals of reverse polarity must not be applied. 39 MB84VD23280EA-90/MB84VD23280EE-90 • Write Cycle (Note 1) (LBs, UBs Control) (SRAM) tWC Address tWP tWR WE tCW CE1s tCW CE2s tAW tAS tBW LBs, UBs tBE tCOE tODW DOUT tDS DIN Note 2 tDH VALID DATA IN Notes: 1. If OE is HIGH during the write cycle, the outputs will remain at high impedance. 2. Because I/O signals may be in the output state at this Time, input signals of reverse polarity must not be applied. 40 MB84VD23280EA-90/MB84VD23280EE-90 ■ ERASE AND PROGRAMMING PERFORMANCE (Flash) Value Parameter Unit Remarks Min. Typ. Max. Sector Erase Time — 1 10 s Excludes programming time prior to erasure Byte Programming Time — 8 300 µs Excludes system-level overhead Word Programming Time — 16 360 µs Excludes system-level overhead Chip Programming Time — — 200 s Excludes system-level overhead 100,000 — — cycle Erase/Program Cycle ■ DATA RETENTION CHARACTERISTICS (SRAM) Parameter Symbol Data Retention Supply Voltage Standby Current VDH = 3.0 V Chip Deselect to Data Retention Mode Time Recovery Time Note Value Unit Min. Typ. Max. VDH 1.5 — 3.3 V IDDS2 — TBD 15 µA tCDR 0 — — ns tR tRC — — ns tRC: Read cycle time • CE1s Controlled Data Retention Mode (Note 1) VCCs DATA RETENTION MODE 2.7 V VIH VDH See Note 2 See Note 2 VCCS – 0.2 V CE1s tCDR tR GND 41 MB84VD23280EA-90/MB84VD23280EE-90 • CE2s Controlled Data Retention Mode (Note 3) VCCs DATA RETENTION MODE 2.7 V VDH VIH tCDR tR CE2s VIL 0.2 V GND Notes: 1. In CE1s controlled data retention mode, input level of CE2s should be fixed Vccs to Vccs–0.2 V or Vss to 0.2 V during data retention mode. Other input and input/output pins can be used between –0.3 V to Vccs+0.3 V. 2. When CE1s is operating at the VIH Min. level, the standby current is given by ISB1s during the transition of VCCs from 3.3V to VIH Min. level. 3. In CE2s controlled data retention mode, input and input/output pins can be used between –0.3 V to Vccs+0.3V. ■ PIN CAPACITANCE Parameter Symbol Condition Value Min. Typ. Max. Unit Input Capacitance CIN VIN = 0 TBD TBD pF Output Capacitance COUT VOUT = 0 TBD TBD pF Control Pin Capacitance CIN2 VIN = 0 TBD TBD pF WP/ACC Pin Capacitance CIN3 VIN = 0 TBD TBD pF Note: Test conditions Ta = 25°C, f = 1.0 MHz ■ HANDLING OF PACKAGE Please handle this package carefully since the sides of packages are right angle. ■ CAUTION 1) The high voltage (VID) can not apply to address pins and control pins except RESET. Therefore, it can not use autoselect and sector protect function by applying the high voltage (VID) to specific pins. 2) For the sector protection, since the high voltage (VID) can be applied to the RESET, it can be protected the sector useing “Extended sector protect” command. 42 MB84VD23280EA-90/MB84VD23280EE-90 ■ ORDERING INFORMATION MB84VD23280 EA -90 -PBS PACKAGE TYPE PBS = 101-ball BGA SPEED OPTION See Product Selector Guide Device Revision EA or EE DEVICE NUMBER/DESCRIPTION 64Mega-bit (8M × 16-bit or 4M × 16-bit) Dual Operation Flash Memory 3.0V-only Read, Program, and Erase 8Mega-bit(1M × 8-bit or 512K × 16-bit) SRAM 43 MB84VD23280EA-90/MB84VD23280EE-90 ■ PACKAGE DIMENSION 101-pin plastic FBGA (BGA-101P-M01) +0.15 12.00±0.10(.472±.004) 1.25 ±0.10 +.006 .049 –.004 (Mounting height) 0.39±0.10 (Stand off) (.015±.004) 11.00±0.10 (.433±.004) 10.40(.409) 7.20(.283) 5.60(.220)REF 0.80 (.031) 12 11 10 9 8 7 6 5 4 3 2 1 5.60(.220) REF 0.80 8.80(.346) (.031) P N M L K J H G F E D C B A INDEX-MARK AREA +0.10 101-Ø0.45 –0.05 +.004 101-Ø.018 –.002 0.08(.003) M 0.10(.004) C 44 2000 FUJITSU LIMITED B101001S-1c-1 Dimensions in mm (inches). MB84VD23280EA-90/MB84VD23280EE-90 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS, INC. 3545 North First Street, San Jose, CA 95134-1804, U.S.A. Tel: +1-408-922-9000 Fax: +1-408-922-9179 Customer Response Center Mon. - Fri.: 7 am - 5 pm (PST) Tel: +1-800-866-8608 Fax: +1-408-922-9179 http://www.fujitsumicro.com/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Am Siebenstein 6-10, D-63303 Dreieich-Buchschlag, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://www.fujitsu-fme.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE. LTD. #05-08, 151 Lorong Chuan, New Tech Park, Singapore 556741 Tel: +65-281-0770 Fax: +65-281-0220 http://www.fmap.com.sg/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 1702 KOSMO TOWER, 1002 Daechi-Dong, Kangnam-Gu,Seoul 135-280 Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 F0101 FUJITSU LIMITED Printed in Japan All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. The contents of this document may not be reproduced or copied without the permission of FUJITSU LIMITED. 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You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Control Law of Japan, the prior authorization by Japanese government should be required for export of those products from Japan.