LPB 2305LT1G S-LPB 2305LT1G 30V P-Channel Enhancement-Mode MOSFET 1. FEATURES 3 ● VDS = -30V ● RDS(ON), Vgs@-10V, [email protected] = 70mΩ ● RDS(ON), [email protected], [email protected] = 85mΩ ● RDS(ON), [email protected], [email protected] = 130mΩ ● We declare that the material of product compliance with 1 2 SOT23LC RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS ● ● Advanced trench process technology High density cell design for ultra low on-resistance. 3. DEVICE MARKING AND ORDERING INFORMATION Marking Shipping LPB2305LT1G P05 3000/Tape&Reel LPB2305LT3G P05 10000/Tape&Reel Device 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Drain–Source Voltage VDSS -30 V Gate–to–Source Voltage – Continuous VGS ±14 V ID -4.2 IDM -30 Symbol Limits Unit PD 1.4 W RΘJA 140 ºC/W TJ,Tstg −55∼+150 ºC Drain Current A – Continuous TA = 25°C – Pulsed (Note 1) 5. THERMAL CHARACTERISTICS Parameter Power Dissipation Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1.Repetitive Rating: Pulse width limited by the maximum junction temperature. 2.1-in²2oz Cu PCB board. Leshan Radio Company, LTD. Rev.A Nov 2016 1/5 LPB 2305LT1G, S-LPB 2305LT1G 30V P-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Symbol Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = -250μAdc) Zero Gate Voltage Drain Current IDSS (VGS = 0, VDS = -24 Vdc) Gate–Body Leakage Current, Forward IGSSF (VGS = 14 Vdc) Gate–Body Leakage Current, Reverse IGSSR (VGS = - 14 Vdc) Min. Typ. Max. -30 - - Unit Vdc μAdc - - -1 nAdc - - 100 nAdc - - -100 ON CHARACTERISTICS (Note 3) Forward Transconductance gfs (VDS = -5Vdc, ID = -5Adc) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = -250μAdc) S 7.0 11 Vdc -0.7 - -1.3 (VGS = -10 Vdc, ID = -4.2 Adc) - 53 70 (VGS = -4.5 Vdc, ID = -4 Adc) - 85 (VGS = -2.5 Vdc, ID = -1 Adc) - 64 86 Static Drain–Source On–State Resistance mΩ RDS(on) 130 DYNAMIC CHARACTERISTICS Input Capacitance Ciss (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Output Capacitance Coss (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Reverse Transfer Capacitance Crss pF - 826.18 pF - 90.74 pF - 53.18 - td(on) - 11.36 - tr - 2.32 - td(off) tf - 34.88 - - 3.52 - (VGS = 0 V, f = 1.0MHz,VDS= -15 V) SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time (VDD = -15V, RL= 3.6Ω ID = -1A, VGEN = -10V RG = 6Ω) Fall Time ns SOURCE–DRAIN DIODE CHARACTERISTICS VSD Forward Voltage (VGS = 0 Vdc, ISD = -1 Adc) V - - -1 3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.A Nov 2016 2/5 LPB 2305LT1G, S-LPB 2305LT1G 30V P-Channel Enhancement-Mode MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES 18 16 VDS=5V 16 14 VGS=2.6V 14 ID,Drain Current(A) ID,Drain Current(A) 12 10 8 150℃ 6 12 VGS=2.1V 10 8 6 4 4 25℃ VGS=1.6V 2 2 -55℃ 0 0 0 1 2 VGS,Gate-to-Source Voltage(V) 3 0 Transfer Characteristics 6 On-Region Characteristics 0.6 RDS(on),Drain-to-Source Resistance(Ω) 1.4 1.2 VGS(th)(Normallized) 2 4 VDS,Drain-to-Source Voltage(V) 1 0.8 0.6 0.4 0.2 0.5 0.4 VGS=1.6V 0.3 0.2 VGS=2.1V 0.1 VGS=2.6V 0 0 -50 0 50 100 T,temperature(℃) 150 0.5 1 1.5 ID,Drain Current(A) 2 RDS(on) vs. ID VGS(th) vs. Temperature Leshan Radio Company, LTD. 0 Rev.A Nov 2016 3/5 LPB 2305LT1G, S-LPB 2305LT1G 30V P-Channel Enhancement-Mode MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES (Con.) TJ(Max)=150°C TA=25°C 40 RDS(ON) 10.0 limited 30 100µs 1ms 0.1s 1.0 10ms 20 10 1s 10s DC 0.1 0.1 TJ(Max)=150°C TA=25°C 10µs Power (W) -ID (Amps) 100.0 1 10 0 0.001 100 0.01 0.1 Zθja Normalized Transient Thermal Resistance 100 1000 Single Pulse Power Rating Junction-toAmbient Maximum Forward Biased Safe Operating Area D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 10 Pulse Width (s) -VDS (Volts) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Ton T Single Pulse 0.001 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 Pulse Width (s) Normalized Maximum Transient Thermal Impedance Leshan Radio Company, LTD. Rev.A Nov 2016 4/5 LPB 2305LT1G, S-LPB 2305LT1G 30V P-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS SOT23-LC HE Ɵ L L1 8° e SOT23-LC DIM MIN NOR MAX A 0.90 1.00 1.10 A1 0.01 0.06 0.10 b 0.30 0.40 0.50 c 0.10 0.15 0.20 D 2.80 2.90 3.00 E 1.50 1.60 1.70 e 1.80 1.90 2.00 L 0.20 0.40 0.60 L1 0.45 0.60 0.75 H E 2.60 2.80 3.00 θ 0º – 10º All Dimensions in mm E b A1 c A R0 .1 5 D GENERAL NOTES 1.Top package surface finish Ra0.4±0.2um 2.Bottom package surface finish Ra0.7±0.2um 3.Side package surface finish Ra0.4±0.2um 9.SOLDERING FOOTPRINT B SOT23-LC DIM (mm) X 0.80 Y 0.90 A 2.40 B 0.95 C 0.95 Y A C X Leshan Radio Company, LTD. Rev.A Nov 2016 5/5