PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 (NPN) Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 5As 5Bs 5Cs 5Es 5Fs 5Gs Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 B SOT-23 1) E C For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 807 BC 808 Maximum Ratings Parameter Symbol Values BC 808 BC 807 Unit Collector-emitter voltage VCE0 45 25 Collector-base voltage VCB0 50 30 Emitter-base voltage VEB0 5 5 Collector current IC 500 Peak collector current ICM 1 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 79 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V mA A mA – 65 … + 150 Thermal Resistance Junction - ambient1) Rth JA ≤ 285 Junction - soldering point Rth JS ≤ 215 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W BC 807 BC 808 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 807 BC 808 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA BC 807 BC 808 V(BR)CB0 Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C ICB0 Emitter cutoff current, VEB = 4 V IEB0 DC current gain1) IC = 100 mA; VCE = 1 V BC 807-16, BC 808-16 BC 807-25, BC 808-25 BC 807-40, BC 808-40 IC = 300 mA; VCE = 1 V BC 807-16, BC 808-16 BC 807-25, BC 808-25 BC 807-40, BC 808-40 hFE Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter saturation voltage1) IC = 500 mA; IB = 50 mA V 45 25 – – – – 50 30 – – – – 5 – – – – – – 100 50 nA µA – – 100 nA – 100 160 250 160 250 350 250 400 630 60 100 170 – – – – – – VCEsat – – 0.7 VBEsat – – 2 Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT – 200 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 10 – pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – 60 – V AC characteristics 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 3 BC 807 BC 808 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V Permissible pulse load Ptot max/Ptot DC = f (tp) Collector cutoff current ICB0 = f (TA) VCB0 = 25 V Semiconductor Group 4 BC 807 BC 808 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 5