Siemens BC808-40 Pnp silicon af transistors (for general af applications high collector current high current gain) Datasheet

PNP Silicon AF Transistors
●
●
●
●
●
BC 807
BC 808
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 817, BC 818 (NPN)
Type
Marking
Ordering Code
Pin Configuration
1
2
3
Package1)
BC 807-16
BC 807-25
BC 807-40
BC 808-16
BC 808-25
BC 808-40
5As
5Bs
5Cs
5Es
5Fs
5Gs
Q62702-C1735
Q62702-C1689
Q62702-C1721
Q62702-C1736
Q62702-C1504
Q62702-C1692
B
SOT-23
1)
E
C
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 807
BC 808
Maximum Ratings
Parameter
Symbol
Values
BC 808
BC 807
Unit
Collector-emitter voltage
VCE0
45
25
Collector-base voltage
VCB0
50
30
Emitter-base voltage
VEB0
5
5
Collector current
IC
500
Peak collector current
ICM
1
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TC = 79 ˚C Ptot
330
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
V
mA
A
mA
– 65 … + 150
Thermal Resistance
Junction - ambient1)
Rth JA
≤
285
Junction - soldering point
Rth JS
≤
215
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
K/W
BC 807
BC 808
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BC 807
BC 808
V(BR)CE0
Collector-base breakdown voltage
IC = 100 µA
BC 807
BC 808
V(BR)CB0
Emitter-base breakdown voltage, IE = 10 µA
V(BR)EB0
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
ICB0
Emitter cutoff current, VEB = 4 V
IEB0
DC current gain1)
IC = 100 mA; VCE = 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
IC = 300 mA; VCE = 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
hFE
Collector-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA
Base-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA
V
45
25
–
–
–
–
50
30
–
–
–
–
5
–
–
–
–
–
–
100
50
nA
µA
–
–
100
nA
–
100
160
250
160
250
350
250
400
630
60
100
170
–
–
–
–
–
–
VCEsat
–
–
0.7
VBEsat
–
–
2
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
fT
–
200
–
MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
10
–
pF
Input capacitance
VEB = 0.5 V, f = 1 MHz
Cibo
–
60
–
V
AC characteristics
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
BC 807
BC 808
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Transition frequency fT = f (IC)
VCE = 5 V
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector cutoff current ICB0 = f (TA)
VCB0 = 25 V
Semiconductor Group
4
BC 807
BC 808
Base-emitter saturation voltage
IC = f (VBEsat)
hFE = 10
Collector-emitter saturation voltage
IC = f (VCEsat)
hFE = 10
DC current gain hFE = f (IC)
VCE = 1 V
Semiconductor Group
5
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