Seme LAB BDX66B Pnp darlington silicon power transistor Datasheet

PNP DARLINGTON
SILICON POWER TRANSISTOR
BDX 66, A, B, C
•
Hermetic Metal TO3 Package.
•
Ideal for General Purpose Low Frequency Switching Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCEO
VCBO
VEBO
ICM
IB
PD
TJ
Tstg
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Peak Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
De-rate Linearly Above 25°C
Junction Temperature Range
Storage Temperature Range
BDX66
-60V
-60V
66A 66B 66C
-80V -100V -120V
-80V -100V -120V
-5V
-20A
-0.25A
150W
0.855 W/°C
-55 to +200°C
-55 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Thermal Resistance, Junction To Case
Max.
Units
1.17
°C/W
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Document Number 8760
Issue 1
Page 1 of 3
PNP DARLINGTON
SILICON POWER TRANSISTOR
BDX 66, A, B, C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
(1)
V(BR)CEO
ICEO
Parameters
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Test Conditions
IC = -100mA
VCE =0.5×VCEO(max)
IE = 0
Collector-Base Cut-Off
Current
ICBO
IE = 0
TJ =200°C
IEBO
Min.
BDX66
-60
BDX66A
-80
BDX66B
-100
BDX66C
-120
Typ.
-1.0
VCB =VCBO(max)
BDX66
VCB = -50V
BDX66A
VCB = -60V
BDX66B
VCB = -70V
BDX66C
-1.0
mA
-5
Emitter Cut-Off Current
VEB = -5V
IC = 0
-5
Collector-Emitter Saturation
Voltage
IC = -10A
IB = -40mA
-2
VBE
Base-Emitter Voltage
IC = -10A
VCE = -3V
-2.5
VF
Diode Forward Voltage
IF = 10A
(1)
VCE(sat)
(1)
hFE
Forward-current transfer
ratio
V
2
IC = -1.0A
(1)
Units
V
IB =0
VCB = -40V
Max.
VCE = -3V
IC = -10A
IC = -16A
2000
-
1000
1000
DYNAMIC CHARACTERISTICS
hfe
Magnitude of common
emitter small-signal shortcircuit forward current
transfer ratio
Cobo
Output Capacitance
ton
Turn-On Time
IC = -10A
toff
Turn-Off Time
-IB1 = IB2 = 40mA
IC = -5A
VCE = -3V
50
-
300
pF
f = 1.0MHz
VCB = -10V
IE = 0
f = 1.0MHz
VCC = -12V
1.0
3.5
µS
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8760
Issue 1
Page 2 of 3
PNP DARLINGTON
SILICON POWER TRANSISTOR
BDX 66, A, B, C
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
1
1.52 (0.06)
3.43 (0.135)
2
22.23
(0.875)
max.
0.97 (0.060)
1.10 (0.043)
16.64 (0.655)
17.15 (0.675)
29.9 (1.177)
30.4 (1.197)
38.61 (1.52)
39.12 (1.54)
10.67 (0.42)
11.18 (0.44)
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO-3 (TO-204AA)
Pin 1 – Base
Pin 2 – Emitter
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
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Case – Collector
Website: http://www.semelab-tt.com
Document Number 8760
Issue 1
Page 3 of 3
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