ON MJW3281A Complementary npn-pnp silicon power bipolar transistor Datasheet

MJW3281A (NPN)
MJW1302A (PNP)
Preferred Devices
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJW3281A and MJW1302A are PowerBase power
transistors for high power audio, disk head positioners and other linear
applications.
• Designed for 100 W Audio Frequency
• Gain Complementary:
•
•
•
Gain Linearity from 100 mA to 7 A
hFE = 45 (Min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area – 1 A/100 V @ 1 Second
High fT – 30 MHz Typical
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15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
230 VOLTS
200 WATTS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
230
Vdc
Collector–Base Voltage
VCBO
230
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector–Emitter Voltage – 1.5 V
VCEX
230
Vdc
Collector Current – Continuous
Collector Current – Peak (Note 1)
IC
15
25
Adc
Rating
2
Base Current – Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
Watts
W/°C
TJ, Tstg
– 65 to
+150
°C
Operating and Storage Junction
Temperature Range
1
TO–247
CASE 340K
STYLE 3
MARKING DIAGRAM
MJW
xxxxA
LLYWW
1 BASE
THERMAL CHARACTERISTICS
Characteristic
3
Symbol
Max
Unit
Thermal Resistance,
Junction to Case
RθJC
0.7
°C/W
Thermal Resistance,
Junction to Ambient
RθJA
40
°C/W
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
3 EMITTER
2 COLLECTOR
MJWxxxxA = Device Code
xxxx
= 3281 OR 1302
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJW3281A
TO–247
30 Units/Rail
MJW1302A
TO–247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 1
1
Publication Order Number:
MJW3281A/D
MJW3281A (NPN) MJW1302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
230
–
–
–
–
50
–
–
5
4
1
–
–
–
–
50
50
50
50
50
45
12
125
–
–
–
115
–
35
200
200
200
200
200
–
–
–
0.4
2
–
–
2
–
30
–
–
–
600
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCB = 230 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
Vdc
µAdc
µAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 100 Vdc, t = 1 s (non–repetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
hFE
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
VCE(sat)
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
–
Vdc
Vdc
DYNAMIC CHARACTERISTICS
fT
Current–Gain – Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
MHz
Cob
pF
NPN MJW3281A
60
50
f,
T CURRENT BANDWIDTH PRODUCT (MHz)
f,
T CURRENT BANDWIDTH PRODUCT (MHz)
PNP MJW1302A
VCE = 10 V
40
5V
30
20
10
0
TJ = 25°C
ftest = 1 MHz
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
10
VCE = 10 V
50
5V
40
30
20
TJ = 25°C
ftest = 1 MHz
10
0
0.1
Figure 1. Typical Current Gain
Bandwidth Product
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
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2
10
MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
1000
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
1000
25°C
TJ = 100°C
100
-25°C
10
TJ = 100°C
100
-25°C
VCE = 20 V
VCE = 20 V
0.1
25°C
1.0
10
IC, COLLECTOR CURRENT (AMPS)
10
100
0.1
Figure 3. DC Current Gain, VCE = 20 V
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain, VCE = 20 V
PNP MJW1302A
NPN MJW3281A
1000
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
1000
TJ = 100°C
25°C
100
-25°C
10
TJ = 100°C
100
-25°C
VCE = 5 V
VCE = 5 V
0.1
25°C
1.0
10
IC, COLLECTOR CURRENT (AMPS)
10
100
0.1
45
30
1A
25
0.5 A
20
15
10
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1A
30
0.5 A
25
20
15
10
0
25
IB = 2 A
35
5.0
TJ = 25°C
0
1.5 A
40
IB = 2 A
IC, COLLECTOR CURRENT (A)
IC , COLLECTOR CURRENT (A)
1.5 A
5.0
100
NPN MJW3281A
45
35
10
Figure 6. DC Current Gain, VCE = 5 V
PNP MJW1302A
40
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, VCE = 5 V
0
100
TJ = 25°C
0
Figure 7. Typical Output Characteristics
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
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3
25
MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
2.5
3.0
SATURATION VOLTAGE (VOLTS)
2.0
SATURATION VOLTAGE (VOLTS)
TJ = 25°C
IC/IB = 10
2.5
VBE(sat)
1.5
1.0
0.5
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
VBE(sat)
1.0
0.5
VCE(sat)
0.1
Figure 10. Typical Saturation Voltages
PNP MJW1302A
NPN MJW3281A
VCE = 5 V (DASHED)
1.0
VCE = 20 V (SOLID)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
TJ = 25°C
VCE = 5 V (DASHED)
1.0
0.1
VCE = 20 V (SOLID)
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
Figure 12. Typical Base–Emitter Voltage
PNP MJW1302A
NPN MJW3281A
100
IC, COLLECTOR CURRENT (AMPS)
100
IC, COLLECTOR CURRENT (AMPS)
100
10
Figure 11. Typical Base–Emitter Voltage
10 mSec
10
100 mSec
1 Sec
1.0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
TJ = 25°C
0.1
0
100
10
0.1
1.5
VCE(sat)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
0
TJ = 25°C
IC/IB = 10
2.0
1.0
100
10
VCE, COLLECTOR EMITTER (VOLTS)
100 mSec
1 Sec
1.0
0.1
1000
10 mSec
10
1.0
Figure 13. Active Region Safe Operating Area
100
10
VCE, COLLECTOR EMITTER (VOLTS)
1000
Figure 14. Active Region Safe Operating Area
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4
MJW3281A (NPN) MJW1302A (PNP)
The data of Figures 13 and 14 is based on TJ(pk) = 150°C;
TC is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
TYPICAL CHARACTERISTICS
PNP MJW1302A
Cib
Cob
1000
100
10000
Cib
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
10000
NPN MJW3281A
TJ = 25°C
ftest = 1 MHz
0.1
1.0
10
1000
Cob
100
100
TJ = 25°C
ftest = 1 MHz
0.1
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. MJW1302A Typical Capacitance
Figure 16. MJW3281A Typical Capacitance
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5
100
MJW3281A (NPN) MJW1302A (PNP)
PACKAGE DIMENSIONS
TO–247
CASE 340K–01
ISSUE C
0.25 (0.010)
M
–T–
–Q–
T B M
E
–B–
C
L
U
A
R
1
K
2
3
–Y–
P
V
H
F
D
0.25 (0.010)
M
4
Y Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
J
G
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
R
U
V
MILLIMETERS
MIN
MAX
19.7
20.3
15.3
15.9
4.7
5.3
1.0
1.4
1.27 REF
2.0
2.4
5.5 BSC
2.2
2.6
0.4
0.8
14.2
14.8
5.5 NOM
3.7
4.3
3.55
3.65
5.0 NOM
5.5 BSC
3.0
3.4
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
S
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6
INCHES
MIN
MAX
0.776
0.799
0.602
0.626
0.185
0.209
0.039
0.055
0.050 REF
0.079
0.094
0.216 BSC
0.087
0.102
0.016
0.031
0.559
0.583
0.217 NOM
0.146
0.169
0.140
0.144
0.197 NOM
0.217 BSC
0.118
0.134
MJW3281A (NPN) MJW1302A (PNP)
Notes
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MJW3281A (NPN) MJW1302A (PNP)
PowerBase is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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MJW3281A/D
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