MJW3281A (NPN) MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: • • • Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area – 1 A/100 V @ 1 Second High fT – 30 MHz Typical http://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector–Emitter Voltage VCEO 230 Vdc Collector–Base Voltage VCBO 230 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector–Emitter Voltage – 1.5 V VCEX 230 Vdc Collector Current – Continuous Collector Current – Peak (Note 1) IC 15 25 Adc Rating 2 Base Current – Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 Watts W/°C TJ, Tstg – 65 to +150 °C Operating and Storage Junction Temperature Range 1 TO–247 CASE 340K STYLE 3 MARKING DIAGRAM MJW xxxxA LLYWW 1 BASE THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.7 °C/W Thermal Resistance, Junction to Ambient RθJA 40 °C/W 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. 3 EMITTER 2 COLLECTOR MJWxxxxA = Device Code xxxx = 3281 OR 1302 LL = Location Code Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping MJW3281A TO–247 30 Units/Rail MJW1302A TO–247 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 March, 2002 – Rev. 1 1 Publication Order Number: MJW3281A/D MJW3281A (NPN) MJW1302A (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 230 – – – – 50 – – 5 4 1 – – – – 50 50 50 50 50 45 12 125 – – – 115 – 35 200 200 200 200 200 – – – 0.4 2 – – 2 – 30 – – – 600 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 230 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO Vdc µAdc µAdc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non–repetitive) (VCE = 100 Vdc, t = 1 s (non–repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) (IC = 15 Adc, VCE = 5 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) VCE(sat) Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) – Vdc Vdc DYNAMIC CHARACTERISTICS fT Current–Gain – Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) MHz Cob pF NPN MJW3281A 60 50 f, T CURRENT BANDWIDTH PRODUCT (MHz) f, T CURRENT BANDWIDTH PRODUCT (MHz) PNP MJW1302A VCE = 10 V 40 5V 30 20 10 0 TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 VCE = 10 V 50 5V 40 30 20 TJ = 25°C ftest = 1 MHz 10 0 0.1 Figure 1. Typical Current Gain Bandwidth Product 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 10 MJW3281A (NPN) MJW1302A (PNP) TYPICAL CHARACTERISTICS PNP MJW1302A NPN MJW3281A 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 25°C TJ = 100°C 100 -25°C 10 TJ = 100°C 100 -25°C VCE = 20 V VCE = 20 V 0.1 25°C 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 100 0.1 Figure 3. DC Current Gain, VCE = 20 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 4. DC Current Gain, VCE = 20 V PNP MJW1302A NPN MJW3281A 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 -25°C 10 TJ = 100°C 100 -25°C VCE = 5 V VCE = 5 V 0.1 25°C 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 100 0.1 45 30 1A 25 0.5 A 20 15 10 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1A 30 0.5 A 25 20 15 10 0 25 IB = 2 A 35 5.0 TJ = 25°C 0 1.5 A 40 IB = 2 A IC, COLLECTOR CURRENT (A) IC , COLLECTOR CURRENT (A) 1.5 A 5.0 100 NPN MJW3281A 45 35 10 Figure 6. DC Current Gain, VCE = 5 V PNP MJW1302A 40 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 5. DC Current Gain, VCE = 5 V 0 100 TJ = 25°C 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 MJW3281A (NPN) MJW1302A (PNP) TYPICAL CHARACTERISTICS PNP MJW1302A NPN MJW3281A 2.5 3.0 SATURATION VOLTAGE (VOLTS) 2.0 SATURATION VOLTAGE (VOLTS) TJ = 25°C IC/IB = 10 2.5 VBE(sat) 1.5 1.0 0.5 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) VBE(sat) 1.0 0.5 VCE(sat) 0.1 Figure 10. Typical Saturation Voltages PNP MJW1302A NPN MJW3281A VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 TJ = 25°C VCE = 5 V (DASHED) 1.0 0.1 VCE = 20 V (SOLID) 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 12. Typical Base–Emitter Voltage PNP MJW1302A NPN MJW3281A 100 IC, COLLECTOR CURRENT (AMPS) 100 IC, COLLECTOR CURRENT (AMPS) 100 10 Figure 11. Typical Base–Emitter Voltage 10 mSec 10 100 mSec 1 Sec 1.0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 9. Typical Saturation Voltages TJ = 25°C 0.1 0 100 10 0.1 1.5 VCE(sat) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 0 TJ = 25°C IC/IB = 10 2.0 1.0 100 10 VCE, COLLECTOR EMITTER (VOLTS) 100 mSec 1 Sec 1.0 0.1 1000 10 mSec 10 1.0 Figure 13. Active Region Safe Operating Area 100 10 VCE, COLLECTOR EMITTER (VOLTS) 1000 Figure 14. Active Region Safe Operating Area http://onsemi.com 4 MJW3281A (NPN) MJW1302A (PNP) The data of Figures 13 and 14 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. TYPICAL CHARACTERISTICS PNP MJW1302A Cib Cob 1000 100 10000 Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 NPN MJW3281A TJ = 25°C ftest = 1 MHz 0.1 1.0 10 1000 Cob 100 100 TJ = 25°C ftest = 1 MHz 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. MJW1302A Typical Capacitance Figure 16. MJW3281A Typical Capacitance http://onsemi.com 5 100 MJW3281A (NPN) MJW1302A (PNP) PACKAGE DIMENSIONS TO–247 CASE 340K–01 ISSUE C 0.25 (0.010) M –T– –Q– T B M E –B– C L U A R 1 K 2 3 –Y– P V H F D 0.25 (0.010) M 4 Y Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. J G DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER S http://onsemi.com 6 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 MJW3281A (NPN) MJW1302A (PNP) Notes http://onsemi.com 7 MJW3281A (NPN) MJW1302A (PNP) PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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