BAV19W-V-G, BAV20W-V-G, BAV21W-V-G Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • • • • Silicon epitaxial planar diodes For general purpose AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Weight: approx. 9.4 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box Parts Table Part Type differentiation Ordering code Marking Remarks BAV19W-V-G VR = 100 V BAV19W-V-G-18 or BAV19W-V-G-08 AS Tape and reel BAV20W-V-G VR = 150 V BAV20W-V-G-18 or BAV20W-V-G-08 AT Tape and reel BAV21W-V-G VR = 200 V BAV21W-V-G-18 or BAV21W-V-G-08 AU Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Continuous reverse voltage Repetitive peak voltage Part Symbol Value Unit BAV19W-V-G VR 100 V BAV20W-V-G VR 150 V BAV21W-V-G VR 200 V BAV19W-V-G VRRM 120 V BAV20W-V-G VRRM 200 V BAV21W-V-G VRRM 250 V 1) mA IF(AV) 2001) mA f ≥ 50 Hz IFRM 625 1) mA t<1s IFSM 1 A Ptot 410 1) mW IF DC Forward current Rectified current (average) half wave rectification with resist. load Repetitive peak forward current Surge forward current Power dissipation 250 Note 1) Valid provided that leads are kept at ambient temperature ** Please see document “Vishay Material Category Policy” www.vishay.com/doc?99902 Document Number 85188 Rev. 1.1, 26-Nov-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BAV19W-V-G, BAV20W-V-G, BAV21W-V-G Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Symbol Value Unit RthJA 375 1) K/W Tj 150 1) Junction temperature Tstg Storage temperature range - 65 to + 150 °C 1) °C Note 1) Valid provided that leads are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage Leakage current Dynamic forward resistance Diode capacitance Reverse recovery time www.vishay.com 2 Max. Unit IF = 100 mA Part Symbol VF Min. Typ. 1000 mV IF = 200 mA VF 1250 mV VR = 100 V BAV19W-V-G IR 100 nA VR = 100 V, Tj = 100 °C BAV19W-V-G IR 15 μA VR = 150 V BAV20W-V-G IR 100 nA VR = 150 V, Tj = 100 °C BAV20W-V-G IR 15 μA VR = 200 V BAV21W-V-G IR 100 nA VR = 200 V, Tj = 100 °C BAV21W-V-G IR 15 μA IF = 10 mA rf 5 Ω VR = 0, f = 1 MHz CD 1.5 pF IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 Ω trr 50 ns For technical questions within your region, please contact one of the following: Document Number 85188 [email protected], [email protected], [email protected] Rev. 1.1, 26-Nov-10 BAV19W-V-G, BAV20W-V-G, BAV21W-V-G Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified Tj = 100 °C 100 10 25 °C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 10 100 IF - Forward Current (mA) Figure 4. Dynamic Forward Resistance vs. Forward Current 0.3 1000 IR(Tj)/IR (25 °C) - Leakage Current I O , I F - Admissible Forward Current (A) 1 18861 Figure 1. Forward Current vs. Forward Voltage 0.2 DC current IF Current (rectif.) I O 0.1 0 0 30 60 90 120 Figure 2. Admissible Forward Current vs. Ambient Temperature 100 10 Reverse Voltage BAV19W-V-G VR = 100 V 1 BAV20W-V-G VR = 150 V BAV21W-V-G VR = 200 V 0.1 150 Tamb - Ambient Temperature (°C) 18859 0 40 80 120 160 200 Tj - Junction Temperature (°C) 18862-1 Figure 5. Leakage Current vs. Junction Temperature 600 2.0 CD - Diode Capacitance (pF) Ptot - Admissible Power Dissipation (mW) 10 1 VF - Forward Voltage (V) 18858 100 rf - Dynamic Forward Resistance (Ω) I F - Forward Current (mA) 1000 500 400 300 200 100 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0 21937 20 40 60 80 100 120 140 Tamb - Ambient Temperature (°C) Figure 3. Admissible Power Dissipation vs. Ambient Temperature Document Number 85188 Rev. 1.1, 26-Nov-10 0 21942 5 10 15 20 25 30 35 VR - Reverse Voltage (V) Figure 6. Diodes Capacitance vs. Reverse Voltage For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 BAV19W-V-G, BAV20W-V-G, BAV21W-V-G Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. Package Dimensions in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.40 (0.055) 3.85 (0.152) 1.7 (0.067) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number 85188 [email protected], [email protected], [email protected] Rev. 1.1, 26-Nov-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000