NHP120SF, NRVHP120SF Surface Mount Ultrafast Power Rectifier Plastic SOD−123FL Package This SOD−123FL ultrafast rectifier provides fast switching performance with soft recovery in a compact thermally efficient package. Its compact footprint makes it ideally suited to portable and automotive applications where board space is at a premium. Its low profile makes it a good option for flat panel display and other applications with limited vertical clearance. The device offers low leakage over temperature making it a good match for applications requiring low quiescent current. http://onsemi.com ULTRAFAST RECTIFIER 1.0 AMPERES 200 VOLTS Features • • • • • Fast Soft Switching for Reduced EMI and Higher Efficiency Low Profile − Maximum Height of 1.0 mm Small Footprint − Footprint Area of 5.94 mm2 NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOD−123FL CASE 498 MARKING DIAGRAM P12MG G Mechanical Characteristics: • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 11.7 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds MSL 1 P12 M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Applications • Instrumentation • Output Rectification in Switching Power Supplies Including Mini • • Adaptors and Flat Panel Display LED Lighting Freewheeling Diode Where Space is at a Premium Device Package Shipping† NHP120SFT3G SOD−123 (Pb−Free) 10000 / Tape & Reel NRVHP120SFT3G SOD−123 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 0 1 Publication Order Number: NHP120SF/D NHP120SF, NRVHP120SF MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 200 V Average Rectified Forward Current (TL = 158°C) IO 1.0 A Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 155°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 30 A Tstg, TJ −65 to +175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Storage and Operating Junction Temperature Range (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 23 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 85 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 330 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 25°C) (IF = 1.0 A, TJ = 125°C) (IF = 2.0 A, TJ = 125°C) VF V Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR Reverse Recovery Time IF = 1.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 25°C trr 25 ns Reverse Recovery Time IF = 1.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 50°C trr 50 ns 1.0 1.1 0.85 0.95 mA 0.5 25 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 NHP120SF, NRVHP120SF TYPICAL CHARACTERISTICS 100 10 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C TA = 150°C TA = 125°C 1 0.1 TA = 25°C 0.01 TA = 175°C TA = 150°C 1 TA = 125°C 0.1 TA = 25°C 0.01 TA = −40°C 0.001 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 0.4 0.2 0.6 1.0 0.8 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.4 1.E−03 1.E−03 1.E−04 TA = 175°C TA = 150°C 1.E−07 TA = 25°C 1.E−07 1.E−09 1.E−08 TA = −40°C 1.E−10 TA = 150°C 1.E−06 TA = 25°C 1.E−08 TA = 125°C 1.E−05 TA = 125°C 1.E−06 TA = 175°C 1.E−04 1.E−05 TA = −40°C 1.E−09 1.E−11 1.E−12 1.E−10 0 20 40 60 80 100 120 140 160 180 200 0 20 60 40 80 100 120 140 160 180 200 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 TJ = 25°C 100 10 1 0 TA = −40°C 0.001 IF(AV), AVERAGE FORWARD CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 C, JUNCTION CAPACITANCE (pF) 10 20 40 60 80 100 120 140 160 180 200 2.0 DC 1.5 Square Wave 1.0 0.5 RqJC = 23°C/W 0 0 20 40 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating http://onsemi.com 3 160 180 NHP120SF, NRVHP120SF TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 3.0 IPK/IAV = 20 2.5 IPK/IAV = 10 TJ = 175°C 2.0 1.5 IPK/IAV = 5 1.0 DC 0.5 Square Wave 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 1000 R(t) (C/W) 100 10 50% (DUTY CYCLE) 25% 10% 5.0% 2.0% 1.0% 1.0 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 PULSE TIME (s) Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad) 100 50% (DUTY CYCLE) 25% R(t) (C/W) 10 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad) http://onsemi.com 4 NHP120SF, NRVHP120SF PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE D q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. D 1 2 DIM A A1 b c D E L HE q A1 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − SIDE VIEW 2X L b INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° RECOMMENDED SOLDERING FOOTPRINT* c 2X MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° 2X 1.22 BOTTOM VIEW ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 4.20 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 2X 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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