PHILIPS BYW97F Fast soft-recovery controlled avalanche rectifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYW97 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Jun 07
1996 Sep 18
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW97 series
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass package, using a high temperature alloyed construction.
This package is hermetically sealed and fatigue free as coefficients of
expansion of all used parts are matched.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
,
2/3 page k(Datasheet)
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
a
MAM104
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYW97F
−
1200
V
BYW97G
−
1400
V
−
1200
V
repetitive peak reverse voltage
continuous reverse voltage
BYW97F
−
1400
V
IF(AV)
average forward current
Ttp = 50 °C; lead length = 10 mm
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
−
3.3
A
IF(AV)
average forward current
Tamb = 55 °C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
−
1.3
A
IFRM
repetitive peak forward current
Ttp = 50 °C; see Fig.4
−
33
A
Tamb = 55 °C; see Fig.5
−
13
A
BYW97G
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
60
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
−
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
1996 Sep 18
see Fig.7
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW97 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
V(BR)R
reverse avalanche
breakdown voltage
CONDITIONS
MIN.
TYP.
MAX.
IF = 5 A; Tj = Tj max; see Fig.8
−
−
1.25
V
IF = 5 A; see Fig.8
−
−
1.45
V
1300
−
−
V
IR = 0.1 mA
BYW97F
1500
−
−
V
VR = VRRMmax;
see Fig.9
−
−
1
µA
VR = VRRMmax; Tj = 165 °C;
see Fig.9
−
−
150
µA
BYW97G
IR
UNIT
reverse current
trr
reverse recovery time
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig.12
−
−
500
ns
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig.10
−
65
−
pF
maximum slope of
reverse recovery current
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.13
−
−
5
A/µs
dI R
-------dt
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 18
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW97 series
GRAPHICAL DATA
MLB523
4
MLB524
2.0
I F(AV)
(A)
1.6
handbook, halfpage
I F(AV)
(A)
3
lead length 10 mm
1.2
2
0.8
1
0.4
0
0
0
100
200
Ttp (o C)
0
100
a = 1.57; VR = VRRMmax; δ = 0.5.
a = 1.57; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.11.
Fig.2
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
o
T amb ( C)
200
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MLB527
40
I FRM
(A)
δ = 0.05
30
0.1
20
0.2
10
0.5
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
Ttp = 50°C; Rth j-tp = 25 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW97 series
MLB528
16
I FRM
(A)
δ = 0.05
12
0.1
8
0.2
4
0.5
1
0
10 2
10 1
1
10 2
10
10 3
10 4
t p (ms)
Tamb = 55 °C; Rth j-a = 75 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MBD431
6
MBD432
200
handbook, halfpage
a=3
P
(W)
2.5
2
1.57
Tj
( o C)
1.42
4
100
2
BYW97F
0
0
0
2
I F(AV)(A)
4
0
1000
BYW97G
VR (V)
2000
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.6
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
1996 Sep 18
Fig.7
5
Maximum permissib‘le junction
temperature as a function of reverse
voltage.
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW97 series
MBD422
MGC574
16
3
10halfpage
handbook,
handbook, halfpage
IF
(A)
IR
(µA)
12
10
8
10
4
1
10 1
0
0
1
2
VF (V)
2
3
0
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
VR = VRRMmax.
Fig.8
Fig.9
Forward current as a function of forward
voltage; maximum values.
100
o
Tj ( C)
200
Reverse current as a function of junction
temperature; maximum values.
MGC595
10 2
handbook, halfpage
50
handbook, halfpage
25
Cd
(pF)
7
50
10
2
3
1
1
10
102
VR (V)
103
MGA200
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 18
Fig.11 Device mounted on a printed-circuit board.
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW97 series
DUT
handbook, full pagewidth
IF
(A)
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.12 Test circuit and reverse recovery time waveform and definition.
IF halfpage
andbook,
dI F
dt
t rr
10% t
dI R
dt
100%
IR
MGC499
Fig.13 Reverse recovery definitions.
1996 Sep 18
7
MAM057
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW97 series
,
PACKAGE OUTLINE
k
handbook, full pagewidth
4.5
max
28 min
5.0 max
Dimensions in mm.
The marking band indicates the cathode.
28 min
a
1.35
max
MBC049
Fig.14 SOD64.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18
8
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