IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) VGS = 10 V 0.435 Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single • • • • • • • • Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION I2PAK (TO-262) TO-220 D S G D G D2PAK (TO-263) S N-Channel MOSFET G D S Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF634NL/SiHF634NL) is available for low-profile application. ORDERING INFORMATION Package Lead (Pb)-free SnPb D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) IRF634NPbF IRF634NSPbF IRF634NSTRLPbFa IRF634NSTRRPbFa IRF634NLPbF SiHF634N-E3 SiHF634NS-E3 SiHF634NSTL-E3a SiHF634NSTR-E3a SiHF634NL-E3 IRF634N IRF634NS IRF634NSTRLa IRF634NSTRRa - SiHF634N SiHF634NS SiHF634NSTLa SiHF634NSTRa - TO-220 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage SYMBOL VDS LIMIT 250 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor UNIT V 8.0 5.6 A 32 0.59 W/°C Single Pulse Avalanche Energyb EAS 110 mJ Avalanche Currenta IAR 4.8 A Repetiitive Avalanche Energya EAR 8.8 mJ * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Maximum Power Dissipation TC = 25 °C SYMBOL Maximum Power Dissipation (PCB Mount)e TA = 25 °C PD Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) LIMIT 88 W 3.8 dV/dt 7.3 TJ, Tstg - 55 to + 175 V/ns °C 300c for 10 s Mounting Torqued UNIT 6-32 or M3 screw 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 9.5 mH, RG = 25 Ω, IAS = 4.8 A, VGS = 10 V. c. 1.6 mm from case. d. This is only applied to TO-220 package. e. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material). THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambienta PARAMETER RthJA - 62 Maximum Junction-to-Ambient (PCB Mount)b RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 1.7 Case-to-Sink, Flat, Greased Surfacea RthCS 0.50 - UNIT °C/W Notes a. This is only applied to TO-220 package. b. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 µA 250 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.33 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V - - 25 VDS = 200 V, VGS = 0 V, TJ = 150 °C - - 250 µA - - 0.435 Ω gfs VDS = 50 V, ID = 4.8 Ab 5.4 - - S Input Capacitance Ciss - 620 - Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = 10 V ID = 4.8 Ab Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 - 84 - - 23 - - - 34 - - 6.5 Qgd - - 16 td(on) - 8.4 - tr - 16 - - 28 - - 15 - td(off) tf VGS = 10 V ID = 4.8 A, VDS = 200 V, see fig. 6 and 13b VDD = 125 V, ID = 4.8 A, RG = 1.3 Ω, see fig. 10b pF nC ns Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 4.5 - - 7.5 - - - 8.0 - - 32 UNIT Dynamic Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current MOSFET symbol showing the integral reverse p - n junction diode IS Pulsed Diode Forward Currenta ISM Body Diode Voltage trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton A G S TJ = 25 °C, IS = 4.8 A, VGS = 0 VSD Body Diode Reverse Recovery Time D Vb TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/µsb - - 1.3 V - 130 200 ns - 650 980 nC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 102 VGS Top 15 V 10 V 8.0 V 7.0 V 10 6.0 V 5.5 V 5.0 V Bottom 4.5 V 1 4.5 V 0.1 20 µs Pulse Width TC = 25 °C 10-2 0.1 91033_01 1 10 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 102 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 10 4.5 V 1 20 µs Pulse Width TC = 175 °C 0.1 102 0.1 91033_02 1 102 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics www.vishay.com 3 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix ID, Drain-to-Source Current (A) 102 1200 TJ = 175 °C 1 TJ = 25 °C 0.1 4.0 RDS(on), Drain-to-Source On Resistance (Normalized) 3.0 6.0 7.0 8.0 200 9.0 ID = 7.9 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 1 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 4 102 10 103 VDS, Drain-to-Source Voltage (V) 91033_05 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 ID = 4.8 A VDS = 200 V 16 VDS = 125 V VDS = 50 V 12 8 4 For test circuit see figure 13 0 0.0 - 60 - 40- 20 0 20 40 60 80 100 120 140 160 180 91033_04 Crss 400 0 5.0 Fig. 3 - Typical Transfer Characteristics 3.5 Coss 600 20 µs Pulse Width VDS = 50 V VGS, Gate-to-Source Voltage (V) 91033_03 Ciss 800 VGS, Gate-to-Source Voltage (V) 10 C, Capacitance (pF) 1000 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 0 91033_06 10 20 30 40 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix 10.0 ID, Drain Current (A) ISD, Reverse Drain Current (A) 102 10 TJ = 175 °C 1 TJ = 25 °C 0.1 0.2 0.6 0.8 1.0 4.0 0.0 25 1.2 VSD, Source-to-Drain Voltage (V) 91033_07 6.0 2.0 VGS = 0 V 0.4 8.0 50 75 Fig. 7 - Typical Source-Drain Diode Forward Voltage VDS VGS ID, Drain-to-Source Current (A) 102 125 150 175 RD D.U.T. RG Operation in this area limited by RDS(on) + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 10 100 µs Fig. 10a - Switching Time Test Circuit 1 1 ms VDS 90 % TC = 25 °C TJ = 175 °C Single Pulse 0.1 1 91033_08 100 TC, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature 91033_09 10 10 ms 102 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 103 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 5 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Thermal Response (ZthJC) 10 1 0 − 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 Single Pulse (Thermal Response) t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 10-4 10-3 10-2 0.1 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 91033_11 VDS 15 V tp Driver L VDS D.U.T RG + A - VDD IAS 20 V tp IAS 0.01 Ω EAS, Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 200 ID 2.0 A 3.4 A Bottom 4.8 A Top 160 120 91033_12c 80 40 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Current regulator Same type as D.U.T. QG VGS 50 kΩ 0.2 µF 12 V 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Fig. 13a - Basic Gate Charge Waveform Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91033. Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1