BOARDCOM HSSR-7110 90v/1.0î©, hermetically sealed, power mosfet optocoupler Datasheet

HSSR-7110, HSSR-7111, HSSR-7112,
HSSR-711E, 5962-9314001, 5962-93140021
90V/1.0Ω, Hermetically Sealed, Power MOSFET
Optocoupler
Data Sheet
Description
Features
The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E and SMD
5962-9314001, 5962-9314002 are single-channel power
MOSFET optocouplers, constructed in eight-pin, hermetic,
dual-in-line, ceramic packages. The devices operate exactly like
a solid-state relay.

The products are capable of operation and storage over the full
military temperature range and can be purchased as a
commercial product (HSSR-7110), with full MIL-PRF-38534
Class H testing (HSSR-7111 and HSSR- 7112), with
MIL-PRF-38534 Class E testing (Class K with exceptions)
(HSSR-711E) or from the DLA Standard Microcircuit Drawing
(SMD) 5962-93140. Details of the Class E program exceptions
are listed here:

1.

2.
3.
4.
5.
Nondestructive Bond Pull, Test method 2023 of
MIL-STD-883 in device screening is not required.










Particle Impact Noise Detection (PIND), Test method 2020
of MIL-STD-883 in device screening and group C testing is
not required.
Dual marked with device part number and DLA Standard
Microcircuit Drawing (SMD)
ac/dc signal and power switching
Compact solid-state bidirectional switch
Manufactured and tested on a MIL-PRF-38534 certified line
QML-38534, Class H and Class E
Hermetically sealed 8-pin, dual-in-line package
Small size and weight
Performance guaranteed over –55°C to +125°C
Connection A 0.8A, 1.0Ω
Connection B 1.6A, 0.25Ω
1500 Vdc withstand test voltage
High transient immunity
5 Amp output surge current
Applications
Die Shear Strength, Test method 2019 of MIL-STD-883 in
group B testing is not required.

Internal Water Vapor Content, Test method 1018 of
MIL-STD-883 in group C testing is not required.

Scanning Electron Microscope (SEM) inspections, Test
method 2018 of MIL-STD-883 in element evaluation is not
required.






Military and space
High reliability systems
Standard 28 Vdc and 48 Vdc load driver
Standard 24 Vac load driver
Aircraft controls
ac/dc electromechanical and solid-state relay replacement
I/O modules
Harsh industrial environments
CAUTION
1.
See Selection Guide – Lead Configuration Options for available
extensions.
Broadcom
-1-
It is advised that normal static precautions be
taken in handling and assembly of this
component to prevent damage and/or
degradation that may be induced by ESD.
HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, 5962-9314001, 5962-9314002
Data Sheet
Functional Diagrams
Functional Diagrams
CONNECTION A
AC/DC CONNECTION
CONNECTION B
DC CONNECTION
IO
IO
1 NC
8
IF
+ 2
4 NC
+
6
5
VO
-
8
1 NC
IF
7
VF
- 3
The devices feature logic level input control and very low
output on-resistance, making them suitable for both ac and dc
loads. Connection A, as shown in the Functional Diagrams,
allows the device to switch either ac or dc loads. Connection B,
with the polarity and pin configuration as shown, allows the
device to switch dc loads only. The advantage of Connection B
is that the on-resistance is significantly reduced, and the
output current capability increases by a factor of two.
+ 2
7
- 3
6
+
VO
-
VF
4 NC
The devices are convenient replacements for mechanical and
solid-state relays where high component reliability with
standard footprint lead configuration is desirable. Devices may
be purchased with a variety of lead bend and plating options.
See Selection Guide – Lead Configuration Options table for
details. Standard microcircuit drawing (SMD) parts are available
for each package and lead style.
5
TRUTH TABLE
INPUT
OUTPUT
H
CLOSED
L
OPEN
All devices are manufactured and tested on a MIL-PRF-38534
certified line, and Class H and Class E devices are included in
the DLA Qualified Manufacturers List, QML-38534 for Hybrid
Microcircuits. Each device contains an AlGaAs light-emitting
diode optically coupled to a photovoltaic diode stack, which
drives two discrete power MOSFETs. The device operates as a
solid-state replacement for single-pole, normally open (1 Form
A) relay used for general-purpose switching of signals and
loads in high reliability applications.
The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, and SMD
5962-9314001, 5962-9314002 are designed to switch loads on
28 Vdc power systems. They meet 80V surge and ±600V spike
requirements.
CAUTION
Maximum Switching Frequency – Care should be
taken during repetitive switching of loads so as
not to exceed the maximum output current,
maximum output power dissipation, maximum
case temperature, and maximum junction
temperature.
Selection Guide – Lead Configuration Options
Avago Technologies Part Number and Options
Commercial
HSSR-7110
MIL-PRF-38534 Class H
HSSR-7111
MIL-PRF-38534 Class E
Gold Plate
Standard Lead Finisha
HSSR-7112
Gold Plate
HSSR-711E
Gold Plate
Option -200
Solder Dippedb
Option #200
Option -200
Butt Joint/Gold Platea
Option #100
Option -100
Gull Wing/Solderedb
Option #300
Option -300
Crew Cut/Gold Platea
Option #600
Option -600
Gold Platea
59629314001HPC
59629314002HPC
59629314001EPC
Solder Dippedb
9314001HPA
9314002HPA
9314001EPA
Butt Joint/Gold Platea
9314001HYC
9314002HYC
Butt Joint/Solderedb
9314001HYA
9314002HYA
Gull Wing/Solderedb
9314001HXA
9314002HXA
Crew Cut/Gold Platea
9314001HZC
9314002HZC
Crew Cut/Solderedb
9314001HZA
9314002HZA
SMD Part Number
Prescript for all below
a.
Gold Plate lead finish: Maximum gold thickness of leads is <100 μin. Typical is 60 μin to 90 μin.
b.
Solder lead finish: Sn63/Pb37.
Broadcom
-2-
ASSR-711E-300
HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, 5962-9314001, 5962-9314002
Data Sheet
Outline Drawing
Outline Drawing
Device Marking
AVAGO
DESIGNATOR
AVAGO P/N
DLA SMD[1]
DLA SMD[1]
PIN ONE/
ESD IDENT
8-Pin DIP Through Hole
10.03 (0.395)
10.29 (0.405)
1.02 (0.040)
1.52 (0.060)
8.13 (0.320)
MAX.
7.16 (0.282 )
7.57 (0.298 )
[1]
A QYYWWZ
XXXXXX
XXXXXXX
XXX XXX
50434
COMPLIANCE INDICATOR,[1]
DATE CODE, SUFFIX
(IF NEEDED)
COUNTRY OF MFR.
AVAGO CAGE CODE[1]
QML PARTS ONLY
4.32 (0.170 )
MAX.
Thermal Resistance
0.51 (0.020)
MIN.
3.81 (0.150 )
MIN.
0.20 (0.008 )
0.33 (0.013 )
7.36 (0.290)
7.87 (0.310)
0.51 (0.020 )
MAX.
2.29 (0.090)
2.79 (0.110)
Maximum Output MOSFET Junction to Case – θJC = 15°C/W
ESD Classification
MIL-STD-883, Method 3015
, Class 2
NOTE: DIMENSIONS IN MILLIMETERS (INCHES).
Hermetic Optocoupler Options
Note: Dimensions in millimeters (inches).
Option
100
Description
Surface-mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on Commercial,
Class H and E product.
4.32 (0.170)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
1.14 (0.045)
1.40 (0.055)
0.20 (0.008)
0.33 (0.013)
0.51 (0.020)
MAX.
7.36 (0.290)
7.87 (0.310)
200
Lead finish is solder dipped rather than gold plated. This option is available on Commercial, Class H and E product. DLA Drawing
(SMD) part numbers contain provisions for lead finish.
300
Surface-mountable hermetic optocoupler with leads cut and bent for gull wing assembly. This option is available on Commercial,
Class H and E product. This option has solder dipped leads.
4.57 (0.180)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
600
1.40 (0.055)
1.65 (0.065)
0.51 (0.020)
MAX.
4.57 (0.180)
MAX.
5˚ MAX.
0.20 (0.008)
0.33 (0.013)
9.65 (0.380)
9.91 (0.390)
1.07 (0.042)
1.31 (0.052)
Surface-mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on Commercial,
Class H and E product.
3.81 (0.150)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
0.20 (0.008)
0.33 (0.013)
1.02 (0.040)
TYP.
7.36 (0.290)
7.87 (0.310)
Broadcom
-3-
HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, 5962-9314001, 5962-9314002
Data Sheet
Absolute Maximum Ratings
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Storage Temperature Range
TS
–65
+150
°C
Operating Ambient Temperature
TA
–55
+125
°C
Junction Temperature
TJ
—
+150
°C
Operating Case Temperaturea
TC
—
+145
°C
—
260 for 10 s
°C
IF
—
20
mA
Peak Repetitive Input Current
(Pulse Width < 100 ms; duty cycle < 50%)
IFPK
—
40
mA
Peak Surge Input Current
(Pulse Width < 0.2 ms; duty cycle < 0.1%)
IFPK surge
—
100
mA
Reverse Input Voltage
VR
—
5
V
Average Output Current (See Figure 2.)
Connection A
Connection B
IO
—
—
0.8
1.6
A
A
—
—
5.0
10.0
A
A
–90
0
90
90
V
V
—
800
mW
Lead Solder Temperature
Average Input Current
Single Shot Output Current (See Figure 3.)
Connection A (Pulse width < 10 ms)
Connection B (Pulse width < 10 ms)
IOPK surge
Output Voltage
Connection A
Connection B
VO
Average Output Power Dissipationb (See Figure 4.)
a.
Maximum junction to case thermal resistance for the device is 15°C/W, where case temperature, TC, is measured at the center of the package bottom.
b.
For rating, see Figure 4. The output power PO rating curve is obtained when the part is handling the maximum average output current IO as shown in Figure 2.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Current (on)a
IF(ON)
5
20
mA
Input Current (on)b
IF(ON)
10
20
mA
Input Voltage (off )
VF(OFF)
0
0.6
V
TA
–55
+125
°C
Operating Temperature
a.
Applies to HSSR-7112 and 5962-9314002Hxx devices only.
b.
Applies to HSSR-7110, HSSR-7111, HSSR-711E, 5962-9314001Hxx, and 5962-9314001Exx devices only.
Broadcom
-4-
HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, 5962-9314001, 5962-9314002
Data Sheet
Electrical Specifications
Electrical Specifications
TA = –55°C to +125°C, unless otherwise specified.
Parameter
Output Withstand Voltage
Output On-Resistance
Connection A
Output On-Resistance
Connection B
Output Leakage Current
Input Forward Voltage
Symbol
Group A
Subgroupa
|VO(OFF)|
1, 2, 3
R(ON)
1, 2, 3
R(ON)
1, 2, 3
Max
Unit
Figure Note
VF = 0.6V, IO = 10 μA
90
110
—
V
5
IF = 10 mA, IO = 800 mA,
(pulse duration ≤ 30 ms)
—
0.40
1.0
Ω
6, 7
IF = 5 mA, IO = 800 mA,
(pulse duration ≤ 30 ms)
—
—
1.0
IF = 10 mA, IO = 1.6A,
(pulse duration ≤ 30 ms)
—
0.12
0.25
IF = 5 mA, IO = 1.6A,
(pulse duration ≤ 30 ms)
—
—
0.25
Ω
6, 7
10-4
10
μA
8
VF
1, 2, 3
IF = 10 mA
1.0
1.24
1.7
V
9
IF = 5 mA
—
—
—
IR = 100 μA
5.0
—
—
V
RH ≤ 65%, t = 5s,
VI-O = 1500 Vdc, TA = 25°C
—
—
1.0
μA
IF = 10 mA, VDD = 28V,
IO = 800 mA
—
1.25
6.0
ms
IF = 5 mA, VDD = 28V, IO = 800 mA
—
—
6.0
IF = 10 mA, VDD = 28V,
IO = 800 mA
—
0.02
0.25
IF = 5 mA, VDD = 28V, IO = 800 mA
—
—
0.25
1000
—
—
V/μs
17
500
—
—
V/μs
18
II-O
1
Turn On Time
tON
9, 10, 11
tOFF
dVo
---------dt
dVio
----------dt
9, 10, 11
9
VPEAK = 50V, CM = 1000 pF,
VDD = 5V, VI-O(PEAK) = 50V,
e, f
1, 10,
11, 12,
13
ms
1, 10,
14, 15
Commercial parts receive 100% testing at 25°C (Subgroups 1 and 9). SMD, Class H, and Class E parts receive 100% testing at 25°C, 125°C, and –55°C
(subgroups 1 and 9, 2 and 10, 3 and 11, respectively).
b.
During the pulsed RON measurement (IO duration <30 ms), ambient (TA) and case temperature (TC) are equal.
Applies to HSSR-7110, HSSR-7111, HSSR-711E, 5962-9314001Hxx and 5962-9314001Exx devices only.
Applies to HSSR-7112 and 5962-9314002Hxx devices only.
e.
Device considered a two-terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together.
f.
This is a momentary withstand test, not an operating condition.
Broadcom
-5-
c
d
a.
d.
c
d
RL = 20 kΩ, CL = 15 pF
c.
c
d
CL = 15 pF, RM ≥ 1 MΩ
9
b, c
b, d
—
Input-Output Insulation
b, c
b, d
VF = 0.6V, VO = 90V
1, 2, 3
Input-Output Transient
Rejection
Typ
1, 2, 3
VR
Output Transient Rejection
Min
IO(OFF)
Input Reverse Breakdown
Voltage
Turn Off Time
Test Conditions
HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, 5962-9314001, 5962-9314002
Data Sheet
Typical Characteristics
Typical Characteristics
All typical values are at TA = 25°C, IF(ON) = 10 mA, VF(OFF) = 0.6V unless otherwise specified.
Parameter
Symbol
Output Off-Capacitance
CO(OFF)
Output Offset Voltagea
|VOS|
Test Conditions
VO = 28V, f = 1 MHz
IF = 10 mA, IO = 0 mA
ΔVF/ΔTA
Input Diode Temperature Coefficient
IF = 10 mA
Typ
Unit
Figure
145
pF
16
2
μV
19
–1.4
mV/°C
Input Capacitanceb
CIN
VF = 0V, f = 1 MHz
20
pF
Input-Output Capacitancec
CI-O
VI-O = 0V, f = 1 MHz
1.5
pF
Input-Output Resistancec
RI-O
VI-O = 500V, t = 60s
1013
Ω
Turn On Time With Peakingd
tON
IFPK = 100 mA, IFSS = 10 mA,
0.22
ms
VDD = 28V, IO = 800 mA
a.
VOS is a function of IF, and is defined between pins 5 and 8, with pin 5 as the reference. VOS must be measured in a stable ambient (free of temperature
gradients).
b.
Zero-bias capacitance measured between the LED anode and cathode.
c.
Device considered a two-terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together.
d.
For a faster turn-on time, the optional peaking circuit shown in Figure 1 can be implemented.
Figure 1 Recommended Input Circuit
HSSR-711x
VCC (+5V)
1
8
+ 2
VF
- 3
7
6
4
5
IF
R2
1200 :
R1
330 :
R3
C
15 μF
IN
1/4 54ACTOO
1/4 54ACTOO*
R1 = REQUIRED CURRENT LIMITING RESISTOR
FOR I F (ON) = 10 mA.
R2 = PULL-UP RESISTOR FOR V F (OFF) < 600 mV;
I F (V CC - V OH) < 600 mV, OMIT R2.
R3, C = OPTIONAL PEAKING CIRCUIT.
TYPICAL VALUES
* USE SECOND GATE IF I F (PK) > 50 mA
REMINDER: TIE ALL UNUSED INPUTS TO GROUND OR V CC
R3
(:)
330
100
33
IF (PK)
(mA)
10 (NO PK)
20
40
100
Broadcom
-6-
HSSR-711x
tON (ms)
2.0
1.0
0.48
0.22
1
HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, 5962-9314001, 5962-9314002
Data Sheet
Typical Characteristics
Figure 2 Maximum Average Output Current Rating vs. Ambient
Temperature
Figure 3 Single Shot (Non-Repetitive) Output Current vs. Pulse
Duration
1.0
12
IO P K S U R G E - O U T P U T C U R R E N T - A
IO - OUTPUT CURRENT - A
0.8
0.6
0.4
0.2
0
-55
CONNECTION - A
I F 10 mA
CA = 40˚C/W
CA = 80˚C/W
-25
5
35
65
95
125
9
CONNECTION-B
8
7
6
5
CONNECTION-A
4
3
155
10
200
600
400
800
1000
PULSE DURATION - ms
Figure 4 Output Power Rating vs. Ambient Temperature
Figure 5 Normalized Typical Output Withstand Voltage vs.
Temperature
1.0
1.10
V F = 0.6 V
I O = 10 μA
1.08
0.8
NORMALIZED TYPICAL OUTPUT
WITHSTAND VOLTAGE
1.06
0.6
0.4
0.2
0
-55
CONNECTION - A
IF 10 mA
CA = 40˚C/W
CA = 80˚C/W
-25
35
5
1.04
1.02
1.00
0.98
0.96
0.94
65
95
125
155
0.92
T A - AMBIENT TEMPERATURE - ˚C
1.8
1.6
5
35
0.8
CONNECTION - A
I F 10 mA
IO = 800 mA
(PULSE DURATION 30 ms)
0.6
0.4
I O - OUTPUT CURRENT - A
1.2
1.0
0.8
5
35
65
95
125
CONNECTION - A
IO 10 mA
IO (PULSE DURATION
30 ms)
0.2
0
T A = 125˚C
-0.2
T A = 25˚C
-0.4
T A = -55˚C
-0.6
-25
65
Figure 7 Typical On State Output I-V Characteristics
1.4
0.6
-55
-25
-55
T A - AMBIENT TEMPERATURE - ˚C
Figure 6 Normalized Typical Output Resistance vs. Temperature
NORMALIZED TYPICAL
OUTPUT RESISTANCE
10 mA
10
T A - AMBIENT TEMPERATURE - ˚C
P O - OUTPUT POWER DISSIPATION - W
IF
11
95
-0.8
- 0 .6
125
-0.4
-0.2
0
0.2
V O - OUTPUT VOLTAGE - V
T A - AMBIENT TEMPERATURE - ˚C
Broadcom
-7-
0.4
0 .6
HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, 5962-9314001, 5962-9314002
Data Sheet
Typical Characteristics
Figure 8 Typical Output Leakage Current vs. Temperature
Figure 9 Typical Input Forward Current vs. Input Forward Voltage
10 -1
CONNECTION A
V F = 0.6 V
V O = 90 V
10 -8
10
10 -2
I F - INPUT FORWARD CURRENT - A
IO (OFF) - OUTPUT LEAKAGE CURRENT - A
10 -7
-9
10 -10
10
-11
10 -3
T A = 125˚C
10 -4
T A = -55˚C
10
20
35
65
95
125
T A = 25˚C
10 -5
-6
0.4
0 .6
0.8
1.0
1.2
1.4
1 .6
V F - INPUT FORWARD VOLTAGE - V
T A - TEMPERATURE - ˚C
Figure 10 Switching Test Circuit for tON, tOFF
V DD
50%
PULSE GEN.
Z O = 50
tf = t r = 5 ns
50%
IF
P.W. = 15 ms
IF
VO
RL
HSSR-711x
90%
1
8
+ 2
VF
- 3
7
6
4
5
VO
MONITOR NODE
C L = 25 pF
(C L INCLUDES PROBE AND
FIXTURE CAPACITANCE)
IF
MONITOR
10%
R (MONITOR)
200
tON
tOFF
GND
GND
Broadcom
-8-
HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, 5962-9314001, 5962-9314002
Data Sheet
Figure 11 Typical Turn On Time vs. Temperature
Typical Characteristics
Figure 12 Typical Turn On Time vs. Input Current
2.6
2.2
2.0
2.2
1.8
1.6
1.4
1.2
1.8
1.4
1.0
0.6
1.0
0.8
- 55
-25
CONNECTION A
V DD = 28 V
I O = 800 mA
T A = 25˚C
2.6
T ON - TURN ON TIME - ms
T ON - TURN ON TIME - ms
3.0
CONNECTION A
I F = 10 mA
V DD = 28 V
I O = 800 mA
2.4
5
35
65
95
0.2
125
5
Figure 13 Typical Turn On Time vs. Voltage
14.6
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
70
CONNECTION A
I F = 10 mA
V DD = 28 V
I O = 800 mA
14.8
T OFF - TURN OFF TIME - μs
T ON - TURN ON TIME - ms
1.4
80
14.4
14.2
14.0
13.8
13.6
13.4
13.2
90
- 55
V DD - VOLTAGE - V
5
35
65
95
125
Figure 16 Typical Output Off Capacitance vs. Output Voltage
440
45
35
C O(OFF) - OUTPUT OFF CAPACITANCE - pF
CONNECTION A
V DD = 28 V
I O = 800 mA
T A = 25˚C
40
T OFF - TURN OFF TIME - μs
-25
T A -TEMPERATURE - ˚C
Figure 15 Typical Turn Off Time vs. Input Current
30
25
20
15
10
5
20
15.0
CONNECTION - A
I F = 10 mA
IO = 800 mA
T A = 25˚C
1.6
15
Figure 14 Typical Turn Off Time vs. Temperature
2.0
1.8
10
I F - INPUT CURRENT - mA
T A - TEMPERATURE - ˚C
5
10
15
360
320
280
240
200
160
120
20
I F - INPUT CURRENT - mA
Broadcom
-9-
CONNECTION A
f = 1 MHz
T A = 25˚C
400
0
20
5
10
15
V O(OFF) - OUTPUT VOLTAGE - V
25
30
HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, 5962-9314001, 5962-9314002
Data Sheet
Typical Characteristics
Figure 17 Output Transient Rejection Test Circuit
HSSR-711x
1
8
+ 2
VF
- 3
7
6
4
5
VM
MONITOR
NODE
IF
INPUT OPEN
CM
+
RM
V PEAK
-
PULSE
GENERATOR
C M INCLUDES PROBE AND FIXTURE CAPACITANCE
R M INCLUDES PROBE AND FIXTURE RESISTANCE
90%
90%
V PEAK
10%
10%
tr
V M (MAX)
tf
5V
(0.8) V (PEAK)
dV O
=
tr
dt
OR
(0.8) V (PEAK)
tf
OVERSHOOT ON V PEAK IS TO BE
10%.
Figure 18 Input-Output Transient Rejection Test Circuit
V DD
HSSR-711x
IF
S1
A
8
+ 2
VF
- 3
7
CL
6
(C L INCLUDES PROBE PLUS
FIXTURE CAPACITANCE )
4
5
V IN
V I-O
+
PULSE
GENERATOR
90%
V I-O(PEAK)
10%
10%
tf
tr
V O(OFF)
S 1 AT A (VF = 0 V)
V O(OFF) (min)
3.25 V
V O(ON) (max) 0.8
V O(ON)
S 1 AT B (I F = 10 mA)11 OR (I F = 5 mA)10
(0.8) V I-O(PEAK)
dV I-O
=
OR
dt
tr
VO
1
B
90%
RL
(0.8) VI-O(PEAK)
tf
OVERSHOOT ON V I-O(PEAK) IS TO BE 10%
Broadcom
- 10 -
HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, 5962-9314001, 5962-9314002
Data Sheet
Applications Information
Figure 19 Voltage Offset Test Setup
Figure 21 Thermal Model
ISOTHERMAL CHAMBER
T je
T jd
T jf1
T jf2
HSSR-711x
IF
104
8 +
1
+ 2
7
- 3
6
15
15
15
TC
DIGITAL
NANOVOLTMETER
V OS
CA
4
5 -
TA
T je = LED JUNCTION TEMPERATURE
T jf1 = FET 1 JUNCTION TEMPERATURE
T jf2 = FET 2 JUNCTION TEMPERATURE
T jd = FET DRIVER JUNCTION TEMPERATURE
T C = CASE TEMPERATURE (MEASURED AT CENTER
OF PACKAGE BOTTOM)
T A = AMBIENT TEMPERATURE (MEASURED 6" AWAY
FROM THE PACKAGE)
CA = CASE-TO-AMBIENT THERMAL RESISTANCE
Figure 20 Burn-In Circuit
HSSR-711x
1
8
2
7
3
6
4
5
R OUT
VO
(SEE NOTE)
1.0
V IN
5.5 V
R IN
200
ALL THERMAL RESISTANCE VALUES ARE IN ˚C/W
R OUT
1.0
On-Resistance and Rating Curves
NOTE:
IN ORDER TO DETERMINE V OUT CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST
BE MEASURED FOR THE BURN-IN BOARDS TO BE USED. THEN, KNOWING CA , DETERMINE THE
CORRECT OUTPUT CURRENT PER FIGURES 2 AND 4 TO INSURE THAT THE DEVICE MEETS THE
DERATING REQUIREMENTS AS SHOWN.
Applications Information
Thermal Model
The steady-state thermal model for the HSSR-711x is shown in
Figure 21. The thermal resistance values given in this model
can be used to calculate the temperatures at each node for a
given operating condition. The thermal resistances between
the LED and other internal nodes are very large in comparison
with the other terms and are omitted for simplicity. The
components do, however, interact indirectly through θCA, the
case-to-ambient thermal resistance. All heat generated flows
through θCA, which raises the case temperature TC accordingly.
The value of θCA depends on the conditions of the board
design and is, therefore, determined by the designer.
The maximum value for each output MOSFET junction-to-case
thermal resistance is specified as 15°C/W. The thermal
resistance from FET driver junction-to-case is also 15°C/W/W.
The power dissipation in the FET driver, however, is negligible
in comparison to the MOSFETs.
The output on-resistance, RON, specified in this data sheet, is
the resistance measured across the output contact when a
pulsed current signal (IO = 800 mA) is applied to the output
pins. The use of a pulsed signal (≤30 ms) implies that each
junction temperature is equal to the ambient and case
temperatures. The steady-state resistance, RSS, on the other
hand, is the value of the resistance measured across the output
contact when a DC current signal is applied to the output pins
for a duration sufficient to reach thermal equilibrium. RSS
includes the effects of the temperature rise of each element in
the thermal model. Rating curves are shown in Figure 2 and
Figure 4. Figure 2 specifies the maximum average output
current allowable for a given ambient temperature. Figure 4
specifies the output power dissipation allowable for a given
ambient temperature. Above 55°C (for θCA = 80°C/W) and
107°C (for θCA = 40°C/W/W), the maximum allowable output
current and power dissipation are related by the expression
RSS = PO(max)/ (IO(max))2 from which RSS can be calculated.
Staying within the safe area assures that the steady-state
junction temperatures remain less than 150°C. As an example,
for TA = 95°C and θCA = 80°C/W, Figure 2 shows that the output
current should be limited to less than 610 mA. A check with
Figure 4 shows that the output power dissipation at TA = 95°C
and IO = 610 mA, is limited to less than 0.35W. This yields an RSS
of 0.94Ω.
Broadcom
- 11 -
HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, 5962-9314001, 5962-9314002
Data Sheet
Design Considerations for Replacement of Electromechanical Relays
Design Considerations for Replacement of
Electromechanical Relays
The HSSR-711x family can replace electromechanical relays
with comparable output voltage and current ratings. The
following design issues need to be considered in the
replacement circuit.
Input Circuit
The drive circuit of the electromechanical relay coil needs to be
modified so that the average forward current driving the LED
of the HSSR-711x does not exceed 20 mA. A nominal forward
drive current of 10 mA is recommended. A recommended drive
circuit with 5V VCC and CMOS logic gates is shown in Figure 1.
If higher VCC voltages are used, adjust the current limiting
resistor to a nominal LED forward current of 10 mA. One
important consideration to note is that when the LED is turned
off, no more than 0.6V forward bias should be applied across
the LED. Even a few microamps of current may be sufficient to
turn on the HSSR- 711x, although it may take a considerable
time. The drive circuit should maintain at least 5 mA of LED
current during the ON condition. If the LED forward current is
less than the 5 mA level, it causes the HSSR-711x to turn on
with a longer delay. In addition, the power dissipation in the
output power MOSFETs increases, which, in turn, may violate
the power dissipation guidelines and affect the reliability of the
device.
Output Circuit
Unlike with electromechanical relays, when considering
solid-state relays, the designer should pay careful attention to
the output on-resistance. The previous section, On-Resistance
and Rating Curves, describes the issues that need to be
considered. In addition, for strictly dc applications, the
designer has an advantage using Connection B, which has
twice the output current rating as Connection A. Furthermore,
for dc-only applications, with Connection B the on-resistance is
considerably less when compared to Connection A.
Output over-voltage protection is yet another important
design consideration when replacing electromechanical relays
with the HSSR-711x. The output power MOSFETs can be
protected using Metal oxide varistors (MOVs) or TransZorbs
against voltage surges that exceed the 90V output withstand
voltage rating. Examples of sources of voltage surges are
inductive load kickbacks, lightning strikes, and electrostatic
voltages that exceed the specifications on this data sheet. For
more information on output load and protection, refer to
Application Note 1047.
References


Broadcom
- 12 -
Application Note 1047, Low On-Resistance Solid State Relays
for High Reliability Applications.
Reliability Data for HSSR-7111, HSSR-7112, and HSSR-711E.
For product information and a complete list of distributors, please go to our web
site: www.broadcom.com.
Broadcom, the pulse logo, Connecting everything, Avago Technologies, Avago,
and the A logo are among the trademarks of Broadcom in the United States,
certain other countries and/or the EU.
Copyright © 2016 Broadcom. All Rights Reserved.
The term "Broadcom" refers to Broadcom Limited and/or its subsidiaries. For
more information, please visit www.broadcom.com.
Broadcom reserves the right to make changes without further notice to any
products or data herein to improve reliability, function, or design.
Information furnished by Broadcom is believed to be accurate and reliable.
However, Broadcom does not assume any liability arising out of the application
or use of this information, nor the application or use of any product or circuit
described herein, neither does it convey any license under its patent rights nor
the rights of others.
AV02-3835EN – November 11, 2016
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