EU02Z(Z)---EU02A(Z) Diode Semiconductor Korea VOLTAGE RANGE: 200--- 600 V CURRENT: 1.0 A HIGH EFFICIENCY RECTIFIERS FEATURES Low cos t Diffused junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, Alcohol, lsopropand and DO - 41 s im ilar solvents MECHANICAL DATA Cas e: JEDEC DO-41, m olded plas tic Term inals: Axial leads ,s olderable per MIL-STD-202, Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces , 0.34 gram s Mounting: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unless otherwise specified. Single phas e,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EU02Z EU02 EU02A UNITS Maximum peak repetitive reverse voltage V RRM 200 400 600 V Maximum RMS voltage V RMS 140 280 420 V Maximum DC blocking voltage V DC 200 400 600 V Maximum average f orw ard rectif ied current 9.5mm lead length @TA =75 IF(AV) 1.0 A IFSM 15.0 A VF 1.4 V Peak forw ard surge current 10ms single half-sine-w ave superimplsed on rated load @TJ =125 Maximum instantaneous f orw ard voltage @ 1.0A Maximum reverse current at rated DC blocking voltage @TA =25 10.0 IR A 300.0 @TA =100 100 Maximum reverse recovery time (Note1) t rr Typical junction capacitance (Note2) CJ Typical thermal resistance (Note3) Rθ JL 20 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range 20 ns 15 pF ／Ｗ NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Therm al resistance junction to ambient. www.diode.kr Diode Semiconductor Korea EU02Z(Z)--- EU02A(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10 N 1. 50 N 1. +0.5A D.U.T. (+) 25VDC (approx) (-) 0 PULSE GENERATOR (NOTE2) 1 NONINDUCTIVE -0.25A OSCILLOSCOPE (NOTE1) -1.0A 1cm SET TIME BASE FOR 10/20 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . 10 TJ=25 Pulse Width=300 µS 1.0 0.1 0.04 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES 100 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- PEAK FORWARD SURGE CURRENT 0.8 0.6 Single Phase Half W ave 60H z Resistive or Inductive Load 0.4 0.2 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, FIG.5--TYPICAL JUNCTION CAPACITANCE 15 200 100 10 5 0 1 5 10 NUMBER OF CYCLES AT 60Hz 50 JUNCTION CAPACITANCE pF PEAK FORWARD SURGE CURRENT AMPERES 1.0 EU02A 60 40 20 10 EU02Z,EU02 4 TJ=25 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr