EIC0910-12 9.50-10.50 GHz 12-Watt Internally Matched Power FET UPDATED 03/07/2008 FEATURES • • • • • • • Excelics .024 EIC0910-12 9.50–10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200Ma Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f = 9.50-10.50GHz Id1dB Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L Vds = 10 V, IDSQ ≈ 65% IDSS f = 10.50GHz IDSS Saturated Drain Current VP Pinch-off Voltage RTH Thermal Resistance3 MIN TYP MAX UNITS 39.5 40.5 dBm 6.0 7.0 dB ±0.6 dB 30 f = 9.50-10.50GHz % 3300 -43 4200 mA dBc -46 VDS = 3 V, VGS = 0 V 6500 9000 mA VDS = 3 V, IDS = 58 mA -2.5 -4.0 V 2.3 2.6 Note: 1. Tested with 50 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. o C/W 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V PARAMETERS Forward Gate Current 130mA 43mA Reverse Gate Current -21mA -7mA Input Power 40.0dBm @ 3dB Compression Channel Temperature o 175 oC 175 C o Storage Temperature -65 to +175 C -65 to +175 oC Total Power Dissipation 57W 57W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised March 2008 EIC0910-12 UPDATED 03/07/2008 9.50-10.50 GHz 12-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised March 2008